BE696169A - - Google Patents

Info

Publication number
BE696169A
BE696169A BE696169DA BE696169A BE 696169 A BE696169 A BE 696169A BE 696169D A BE696169D A BE 696169DA BE 696169 A BE696169 A BE 696169A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE696169A publication Critical patent/BE696169A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/611Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113Isolations within a component, i.e. internal isolations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126Top-view geometrical layouts of the regions or the junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
BE696169D 1966-03-28 1967-03-28 BE696169A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1982866 1966-03-28

Publications (1)

Publication Number Publication Date
BE696169A true BE696169A (en:Method) 1967-09-01

Family

ID=12010142

Family Applications (1)

Application Number Title Priority Date Filing Date
BE696169D BE696169A (en:Method) 1966-03-28 1967-03-28

Country Status (8)

Country Link
US (1) US3786319A (en:Method)
BE (1) BE696169A (en:Method)
CH (1) CH480735A (en:Method)
DE (1) DE1614144B2 (en:Method)
GB (1) GB1175601A (en:Method)
NL (1) NL154625B (en:Method)
SE (1) SE337262B (en:Method)
SU (1) SU398068A3 (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119907274A (zh) * 2025-03-28 2025-04-29 杭州谱析光晶半导体科技有限公司 一种高密度的SiC MOSFET结构及其制备工艺

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893162A (en) * 1972-03-02 1975-07-01 Siemens Ag Resilient tubular member for holding a semiconductor device together under pressure
JPS5613029B2 (en:Method) * 1973-09-21 1981-03-25
US4240093A (en) * 1976-12-10 1980-12-16 Rca Corporation Integrated circuit device including both N-channel and P-channel insulated gate field effect transistors
US4173022A (en) * 1978-05-09 1979-10-30 Rca Corp. Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics
US5191396B1 (en) * 1978-10-13 1995-12-26 Int Rectifier Corp High power mosfet with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5130767C1 (en) * 1979-05-14 2001-08-14 Int Rectifier Corp Plural polygon source pattern for mosfet
US4370669A (en) * 1980-07-16 1983-01-25 General Motors Corporation Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit
JPS5727070A (en) * 1980-07-25 1982-02-13 Toshiba Corp Mos type semiconductor device
US4499482A (en) * 1981-12-22 1985-02-12 Levine Michael A Weak-source for cryogenic semiconductor device
DE3639433A1 (de) * 1986-11-18 1988-05-26 Licentia Gmbh Halbleiteranordnung
GB9201004D0 (en) * 1992-01-17 1992-03-11 Philips Electronic Associated A semiconductor device comprising an insulated gate field effect device
US5440154A (en) * 1993-07-01 1995-08-08 Lsi Logic Corporation Non-rectangular MOS device configurations for gate array type integrated circuits
US5874754A (en) * 1993-07-01 1999-02-23 Lsi Logic Corporation Microelectronic cells with bent gates and compressed minimum spacings, and method of patterning interconnections for the gates
US5864165A (en) * 1994-11-02 1999-01-26 Lsi Logic Corporation Triangular semiconductor NAND gate
US6097073A (en) * 1994-11-02 2000-08-01 Lsi Logic Corporation Triangular semiconductor or gate
US5973376A (en) * 1994-11-02 1999-10-26 Lsi Logic Corporation Architecture having diamond shaped or parallelogram shaped cells
US5742086A (en) * 1994-11-02 1998-04-21 Lsi Logic Corporation Hexagonal DRAM array
US5777360A (en) * 1994-11-02 1998-07-07 Lsi Logic Corporation Hexagonal field programmable gate array architecture
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
WO2000028659A1 (en) * 1998-11-09 2000-05-18 Smith Technology Development, Llc. Two-dimensional amplifier
JP4794141B2 (ja) * 2004-06-03 2011-10-19 Okiセミコンダクタ株式会社 半導体素子及びその製造方法
US10276679B2 (en) * 2017-05-30 2019-04-30 Vanguard International Semiconductor Corporation Semiconductor device and method for manufacturing the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268827A (en) * 1963-04-01 1966-08-23 Rca Corp Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor
US3406298A (en) * 1965-02-03 1968-10-15 Ibm Integrated igfet logic circuit with linear resistive load
US3436622A (en) * 1966-12-20 1969-04-01 Texas Instruments Inc Compound channel insulated gate triode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119907274A (zh) * 2025-03-28 2025-04-29 杭州谱析光晶半导体科技有限公司 一种高密度的SiC MOSFET结构及其制备工艺

Also Published As

Publication number Publication date
SU398068A3 (en:Method) 1973-09-17
NL154625B (nl) 1977-09-15
GB1175601A (en) 1969-12-23
NL6704263A (en:Method) 1967-09-29
DE1614144A1 (de) 1970-06-25
CH480735A (de) 1969-10-31
US3786319A (en) 1974-01-15
DE1614144B2 (de) 1970-11-05
SE337262B (en:Method) 1971-08-02

Similar Documents

Publication Publication Date Title
AT281852B (en:Method)
AU5917865A (en:Method)
AU428063B2 (en:Method)
AU1141566A (en:Method)
AU414526B2 (en:Method)
AU417216B2 (en:Method)
AU421822B2 (en:Method)
AU1111066A (en:Method)
AU218666A (en:Method)
BE675237A (en:Method)
BE675644A (en:Method)
AU92366A (en:Method)
BE447356A (en:Method)
BE529218A (en:Method)
BE597652A (en:Method)
BE624223A (en:Method)
BE637138A (en:Method)
BE662818A (en:Method)
BE666282A (en:Method)
BE673316A (en:Method)
BE674777A (en:Method)
BE674792A (en:Method)
BE675139A (en:Method)
BE676659A (en:Method)
BE675376A (en:Method)

Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: MATSUSHITA ELECTRONICS CORP.

Effective date: 19840328