BE692148A - - Google Patents
Info
- Publication number
- BE692148A BE692148A BE692148DA BE692148A BE 692148 A BE692148 A BE 692148A BE 692148D A BE692148D A BE 692148DA BE 692148 A BE692148 A BE 692148A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02543—Phosphides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S118/00—Coating apparatus
- Y10S118/90—Semiconductor vapor doping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/056—Gallium arsenide
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/065—Gp III-V generic compounds-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/935—Gas flow control
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52124066A | 1966-01-03 | 1966-01-03 | |
US60224266A | 1966-12-16 | 1966-12-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
BE692148A true BE692148A (ja) | 1967-07-03 |
Family
ID=27060418
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE692148D BE692148A (ja) | 1966-01-03 | 1967-01-03 |
Country Status (5)
Country | Link |
---|---|
US (2) | US3441000A (ja) |
BE (1) | BE692148A (ja) |
DE (1) | DE1544230A1 (ja) |
FR (1) | FR1509254A (ja) |
NL (1) | NL6700080A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111996536A (zh) * | 2020-09-21 | 2020-11-27 | 福建兵工装备有限公司 | 枪管内膛液体处理装置 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3617381A (en) * | 1968-07-30 | 1971-11-02 | Rca Corp | Method of epitaxially growing single crystal films of metal oxides |
US3637434A (en) * | 1968-11-07 | 1972-01-25 | Nippon Electric Co | Vapor deposition apparatus |
US3554162A (en) * | 1969-01-22 | 1971-01-12 | Motorola Inc | Diffusion tube |
US3675619A (en) * | 1969-02-25 | 1972-07-11 | Monsanto Co | Apparatus for production of epitaxial films |
US3602192A (en) * | 1969-05-19 | 1971-08-31 | Ibm | Semiconductor wafer processing |
US4020791A (en) * | 1969-06-30 | 1977-05-03 | Siemens Aktiengesellschaft | Apparatus for indiffusing dopants into semiconductor material |
US3603284A (en) * | 1970-01-02 | 1971-09-07 | Ibm | Vapor deposition apparatus |
FR2075325A5 (ja) * | 1970-01-09 | 1971-10-08 | Hitachi Ltd | |
US3648653A (en) * | 1970-06-01 | 1972-03-14 | Bell Telephone Labor Inc | Liquid phase crystal growth apparatus |
US3805735A (en) * | 1970-07-27 | 1974-04-23 | Siemens Ag | Device for indiffusing dopants into semiconductor wafers |
JPS4942351B1 (ja) * | 1970-08-12 | 1974-11-14 | ||
US3690290A (en) * | 1971-04-29 | 1972-09-12 | Motorola Inc | Apparatus for providing epitaxial layers on a substrate |
DE2131722A1 (de) * | 1971-06-25 | 1972-12-28 | Siemens Ag | Anordnung zum Eindiffundieren von Dotierstoffen |
US3830194A (en) * | 1972-09-28 | 1974-08-20 | Applied Materials Tech | Susceptor support structure and docking assembly |
US3925119A (en) * | 1973-05-07 | 1975-12-09 | Ibm | Method for vapor deposition of gallium arsenide phosphide upon gallium arsenide substrates |
US3888705A (en) * | 1973-12-19 | 1975-06-10 | Nasa | Vapor phase growth of groups iii-v compounds by hydrogen chloride transport of the elements |
US4155784A (en) * | 1977-04-08 | 1979-05-22 | Trw Inc. | Process for epitaxially growing a gallium arsenide layer having reduced silicon contaminants on a gallium arsenide substrate |
DE2928206C2 (de) * | 1978-07-31 | 1983-03-24 | Tokyo Shibaura Denki K.K., Kawasaki, Kanagawa | Vertikale Dampfphasen-Aufwachsvorrichtung |
US4190470A (en) * | 1978-11-06 | 1980-02-26 | M/A Com, Inc. | Production of epitaxial layers by vapor deposition utilizing dynamically adjusted flow rates and gas phase concentrations |
JPS5944771B2 (ja) * | 1979-03-29 | 1984-11-01 | テルサ−ムコ株式会社 | 半導体熱処理炉 |
JPS5942970B2 (ja) * | 1979-03-29 | 1984-10-18 | テルサ−ムコ株式会社 | 半導体熱処理用反応管 |
US4247781A (en) * | 1979-06-29 | 1981-01-27 | International Business Machines Corporation | Cooled target disc for high current ion implantation method and apparatus |
US4332838A (en) * | 1980-09-24 | 1982-06-01 | Wegrzyn James E | Particulate thin film fabrication process |
JPS6055478B2 (ja) * | 1982-10-19 | 1985-12-05 | 松下電器産業株式会社 | 気相成長方法 |
US4488914A (en) * | 1982-10-29 | 1984-12-18 | The United States Of America As Represented By The Secretary Of The Air Force | Process for the epitaxial deposition of III-V compounds utilizing a continuous in-situ hydrogen chloride etch |
JPS5982731A (ja) * | 1982-11-04 | 1984-05-12 | Toshiba Corp | ウエハ水蒸気酸化装置 |
US4493287A (en) * | 1982-12-03 | 1985-01-15 | Northern Telecom Limited | Diffusion equipment |
DE3305934A1 (de) * | 1983-02-21 | 1984-08-23 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zur temperaturbehandlung von substraten, insbesondere von halbleiterkristallscheiben |
FR2548688B1 (fr) * | 1983-07-08 | 1985-10-25 | Radiotechnique Compelec | Porte-substrat tournant pour reacteur d'epitaxie |
US4539933A (en) * | 1983-08-31 | 1985-09-10 | Anicon, Inc. | Chemical vapor deposition apparatus |
US4504329A (en) * | 1983-10-06 | 1985-03-12 | The United States Of America As Represented By The Secretary Of The Air Force | Process for the epitaxial deposition of III-V compounds utilizing a binary alloy as the metallic source |
US4592307A (en) * | 1985-02-28 | 1986-06-03 | Rca Corporation | Vapor phase deposition apparatus |
US4801557A (en) * | 1987-06-23 | 1989-01-31 | Northwestern University | Vapor-phase epitaxy of indium phosphide and other compounds using flow-rate modulation |
DE3810832A1 (de) * | 1988-03-30 | 1989-10-19 | Heraeus Schott Quarzschmelze | Behandlungsvorrichtung aus quarzglas |
DE3907610A1 (de) * | 1989-03-09 | 1990-09-13 | Telefunken Electronic Gmbh | Epitaxieverfahren |
US5169453A (en) * | 1989-03-20 | 1992-12-08 | Toyoko Kagaku Co., Ltd. | Wafer supporting jig and a decompressed gas phase growth method using such a jig |
EP1120813B1 (en) * | 2000-01-24 | 2006-05-03 | Infineon Technologies SC300 GmbH & Co. KG | Reactor for manufacturing of a semiconductor device |
SG125934A1 (en) * | 2003-02-27 | 2006-10-30 | Asahi Glass Co Ltd | Outer tube made of silicon carbide and thermal treatment system for semiconductors |
TW201209219A (en) * | 2010-08-16 | 2012-03-01 | Hon Hai Prec Ind Co Ltd | Coating apparatus and coating method |
US20160090665A1 (en) * | 2014-09-25 | 2016-03-31 | Panasonic Intellectual Property Management Co., Ltd. | Apparatus for producing group iii nitride crystal, and method for producing the same |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2831784A (en) * | 1958-04-22 | Gastinger | ||
US2893850A (en) * | 1956-08-03 | 1959-07-07 | Bichowsky Foord Von | Apparatus for the production of elemental silicon |
NL238464A (ja) * | 1958-05-29 | |||
US3009834A (en) * | 1959-10-29 | 1961-11-21 | Jacques M Hanlet | Process of forming an electroluminescent article and the resulting article |
US3121062A (en) * | 1961-06-22 | 1964-02-11 | Herbert J Gonld | Vapor phase crystallization |
US3233578A (en) * | 1962-04-23 | 1966-02-08 | Capita Emil Robert | Apparatus for vapor plating |
US3301213A (en) * | 1962-10-23 | 1967-01-31 | Ibm | Epitaxial reactor apparatus |
US3345209A (en) * | 1964-04-02 | 1967-10-03 | Ibm | Growth control of disproportionation process |
US3361591A (en) * | 1964-04-15 | 1968-01-02 | Hughes Aircraft Co | Production of thin films of cadmium sulfide, cadmium telluride or cadmium selenide |
DE1544253C3 (de) * | 1964-09-14 | 1974-08-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum epitaktischen Abscheiden yon Halbleitermaterial |
US3354004A (en) * | 1964-11-17 | 1967-11-21 | Ibm | Method for enhancing efficiency of recovery of semi-conductor material in perturbable disproportionation systems |
US3338761A (en) * | 1965-03-31 | 1967-08-29 | Texas Instruments Inc | Method and apparatus for making compound materials |
US3361600A (en) * | 1965-08-09 | 1968-01-02 | Ibm | Method of doping epitaxially grown semiconductor material |
-
1964
- 1964-05-23 NL NL6700080A patent/NL6700080A/xx unknown
-
1966
- 1966-01-03 US US521240A patent/US3441000A/en not_active Expired - Lifetime
- 1966-12-16 US US602242A patent/US3511723A/en not_active Expired - Lifetime
- 1966-12-29 DE DE19661544230 patent/DE1544230A1/de active Pending
-
1967
- 1967-01-03 BE BE692148D patent/BE692148A/xx unknown
- 1967-01-03 FR FR89788A patent/FR1509254A/fr not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111996536A (zh) * | 2020-09-21 | 2020-11-27 | 福建兵工装备有限公司 | 枪管内膛液体处理装置 |
Also Published As
Publication number | Publication date |
---|---|
DE1544230A1 (de) | 1970-03-19 |
US3441000A (en) | 1969-04-29 |
US3511723A (en) | 1970-05-12 |
NL6700080A (ja) | 1967-07-04 |
FR1509254A (fr) | 1968-01-12 |