BE688955A - - Google Patents

Info

Publication number
BE688955A
BE688955A BE688955DA BE688955A BE 688955 A BE688955 A BE 688955A BE 688955D A BE688955D A BE 688955DA BE 688955 A BE688955 A BE 688955A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE688955A publication Critical patent/BE688955A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/82Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/021Formation of switching materials, e.g. deposition of layers
    • H10N70/026Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/041Modification of switching materials after formation, e.g. doping
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8822Sulfides, e.g. CuS
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825Selenides, e.g. GeSe

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Thermistors And Varistors (AREA)
BE688955D 1965-11-10 1966-10-27 BE688955A (US07494231-20090224-C00006.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1965D0048616 DE1261252C2 (de) 1965-11-10 1965-11-10 Elektronisches, bistabiles sperrschichtfreies Halbleiterschaltelement und Verfahren zu seiner Herstellung

Publications (1)

Publication Number Publication Date
BE688955A true BE688955A (US07494231-20090224-C00006.png) 1967-03-31

Family

ID=7051308

Family Applications (1)

Application Number Title Priority Date Filing Date
BE688955D BE688955A (US07494231-20090224-C00006.png) 1965-11-10 1966-10-27

Country Status (7)

Country Link
AT (1) AT266264B (US07494231-20090224-C00006.png)
BE (1) BE688955A (US07494231-20090224-C00006.png)
CH (1) CH454297A (US07494231-20090224-C00006.png)
DE (1) DE1261252C2 (US07494231-20090224-C00006.png)
FR (1) FR1498954A (US07494231-20090224-C00006.png)
GB (1) GB1147355A (US07494231-20090224-C00006.png)
NL (1) NL6615217A (US07494231-20090224-C00006.png)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3203803B2 (ja) * 1992-09-01 2001-08-27 株式会社デンソー サーミスタ式温度センサ
DE102005001253A1 (de) * 2005-01-11 2006-07-20 Infineon Technologies Ag Speicherzellenanordnung, Verfahren zu deren Herstellung und Halbleiterspeichereinrichtung
US7515454B2 (en) * 2006-08-02 2009-04-07 Infineon Technologies Ag CBRAM cell and CBRAM array, and method of operating thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816228A (en) * 1953-05-21 1957-12-10 Rca Corp Semiconductor phase shift oscillator and device
US2968014A (en) * 1959-04-01 1961-01-10 Kentucky Res Foundation Synthetic stibnite crystal and method for producing the same
NL283345A (US07494231-20090224-C00006.png) * 1961-09-19

Also Published As

Publication number Publication date
DE1261252B (de) 1968-02-15
CH454297A (de) 1968-04-15
FR1498954A (fr) 1967-10-20
NL6615217A (US07494231-20090224-C00006.png) 1967-05-11
DE1261252C2 (de) 1974-01-03
GB1147355A (en) 1969-04-02
AT266264B (de) 1968-11-11

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