BE676602A - - Google Patents

Info

Publication number
BE676602A
BE676602A BE676602DA BE676602A BE 676602 A BE676602 A BE 676602A BE 676602D A BE676602D A BE 676602DA BE 676602 A BE676602 A BE 676602A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE676602A publication Critical patent/BE676602A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
BE676602D 1965-02-17 1966-02-16 BE676602A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6501946A NL6501946A (en:Method) 1965-02-17 1965-02-17

Publications (1)

Publication Number Publication Date
BE676602A true BE676602A (en:Method) 1966-08-16

Family

ID=19792391

Family Applications (1)

Application Number Title Priority Date Filing Date
BE676602D BE676602A (en:Method) 1965-02-17 1966-02-16

Country Status (7)

Country Link
US (1) US3436620A (en:Method)
AT (1) AT273227B (en:Method)
BE (1) BE676602A (en:Method)
CH (1) CH444974A (en:Method)
DE (1) DE1564383A1 (en:Method)
GB (1) GB1135632A (en:Method)
NL (1) NL6501946A (en:Method)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2703877C2 (de) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
DE2706623A1 (de) * 1977-02-16 1978-08-17 Siemens Ag Mis-fet fuer hohe source-drain-spannungen
JPS54154289A (en) * 1978-05-26 1979-12-05 Matsushita Electric Ind Co Ltd Manufacture of thin-film transistor array
US4343081A (en) * 1979-06-22 1982-08-10 L'etat Francais Represente Par Le Secretaire D'etat Aux Postes Et Telecommunications Et A La Telediffusion (Centre National D'etudes Des Telecommunications) Process for making semi-conductor devices
JP3548237B2 (ja) * 1994-08-29 2004-07-28 シャープ株式会社 薄膜トランジスタ
US5648671A (en) * 1995-12-13 1997-07-15 U S Philips Corporation Lateral thin-film SOI devices with linearly-graded field oxide and linear doping profile

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2951191A (en) * 1958-08-26 1960-08-30 Rca Corp Semiconductor devices
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor

Also Published As

Publication number Publication date
GB1135632A (en) 1968-12-04
DE1564383A1 (de) 1969-09-04
NL6501946A (en:Method) 1966-08-18
CH444974A (de) 1967-10-15
US3436620A (en) 1969-04-01
AT273227B (de) 1969-08-11

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