BE663896A - - Google Patents

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Publication number
BE663896A
BE663896A BE663896A BE663896A BE663896A BE 663896 A BE663896 A BE 663896A BE 663896 A BE663896 A BE 663896A BE 663896 A BE663896 A BE 663896A BE 663896 A BE663896 A BE 663896A
Authority
BE
Belgium
Application number
BE663896A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL6405411A external-priority patent/NL6405411A/xx
Application filed filed Critical
Priority claimed from NL6510237A external-priority patent/NL6510237A/xx
Publication of BE663896A publication Critical patent/BE663896A/xx

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L24/02Bonding areas ; Manufacturing methods related thereto
    • H01L24/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291Oxides or nitrides or carbides, e.g. ceramics, glass
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    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Wire Bonding (AREA)
BE663896A 1964-05-15 1965-05-13 BE663896A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL6405411A NL6405411A (nl) 1964-05-15 1964-05-15
NL6510237A NL6510237A (nl) 1965-08-06 1965-08-06

Publications (1)

Publication Number Publication Date
BE663896A true BE663896A (nl) 1965-11-16

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Application Number Title Priority Date Filing Date
BE663896A BE663896A (nl) 1964-05-15 1965-05-13
BE669821A BE669821A (nl) 1964-05-15 1965-09-17

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Application Number Title Priority Date Filing Date
BE669821A BE669821A (nl) 1964-05-15 1965-09-17

Country Status (9)

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US (1) US3373323A (nl)
JP (1) JPS4820951B1 (nl)
BE (2) BE663896A (nl)
CH (1) CH432661A (nl)
DE (1) DE1514254B2 (nl)
DK (1) DK117084B (nl)
GB (1) GB1111663A (nl)
NL (1) NL134388C (nl)
SE (1) SE320128B (nl)

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NL6609002A (nl) * 1966-06-29 1968-01-02
DE1564705A1 (de) * 1966-09-12 1970-05-14 Siemens Ag Halbleiteranordnung mit mindestens einem in Emitterschaltung betriebenen Transistor
US3518504A (en) * 1966-11-15 1970-06-30 Int Standard Electric Corp Transistor with lead-in electrodes
NL158027B (nl) * 1967-09-12 1978-09-15 Philips Nv Gestabiliseerde planaire halfgeleiderinrichting met een hoog gedoteerde oppervlaktezone.
US3573571A (en) * 1967-10-13 1971-04-06 Gen Electric Surface-diffused transistor with isolated field plate
GB1188879A (en) * 1967-12-13 1970-04-22 Matsushita Electronics Corp Planar Transistor
DE1926989A1 (de) * 1969-05-27 1970-12-03 Beneking Prof Dr Rer Nat Heinz Hochfrequenzleitung
DE1927876C3 (de) * 1969-05-31 1979-09-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3697828A (en) * 1970-12-03 1972-10-10 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
US3763550A (en) * 1970-12-03 1973-10-09 Gen Motors Corp Geometry for a pnp silicon transistor with overlay contacts
JPS547196B2 (nl) * 1971-08-26 1979-04-04
US4017886A (en) * 1972-10-18 1977-04-12 Hitachi, Ltd. Discrete semiconductor device having polymer resin as insulator and method for making the same
US4360823A (en) * 1977-03-16 1982-11-23 U.S. Philips Corporation Semiconductor device having an improved multilayer wiring system
US4302530A (en) * 1977-12-08 1981-11-24 University Of Pennsylvania Method for making substance-sensitive electrical structures by processing substance-sensitive photoresist material
US4644380A (en) * 1977-12-08 1987-02-17 University Of Pennsylvania Substance-sensitive electrical structures
JPS54157092A (en) * 1978-05-31 1979-12-11 Nec Corp Semiconductor integrated circuit device
JPS5850417B2 (ja) * 1979-07-31 1983-11-10 富士通株式会社 半導体装置の製造方法
US4442529A (en) * 1981-02-04 1984-04-10 At&T Bell Telephone Laboratories, Incorporated Power supply rejection characteristics of CMOS circuits
JPS6042855A (ja) * 1983-08-19 1985-03-07 Hitachi Ltd 半導体装置
US4693780A (en) * 1985-02-22 1987-09-15 Siemens Aktiengesellschaft Electrical isolation and leveling of patterned surfaces
US4908689A (en) * 1986-05-06 1990-03-13 International Business Machines Corporation Organic solder barrier
JPH0517192Y2 (nl) * 1987-12-24 1993-05-10
US5053850A (en) * 1988-03-14 1991-10-01 Motorola, Inc. Bonding pad for semiconductor devices
US5874782A (en) * 1995-08-24 1999-02-23 International Business Machines Corporation Wafer with elevated contact structures
JP2003078022A (ja) * 2001-09-06 2003-03-14 Mitsubishi Electric Corp 半導体装置および半導体装置の製造方法

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US3257588A (en) * 1959-04-27 1966-06-21 Rca Corp Semiconductor device enclosures
US3271201A (en) * 1962-10-30 1966-09-06 Itt Planar semiconductor devices
US3271685A (en) * 1963-06-20 1966-09-06 Westinghouse Electric Corp Multipurpose molecular electronic semiconductor device for performing amplifier and oscillator-mixer functions including degenerative feedback means

Also Published As

Publication number Publication date
DE1514254B2 (de) 1971-02-25
US3373323A (en) 1968-03-12
BE669821A (nl) 1966-03-17
GB1111663A (en) 1968-05-01
DE1514254A1 (de) 1970-03-05
JPS4820951B1 (nl) 1973-06-25
NL134388C (nl) 1900-01-01
CH432661A (de) 1967-03-31
DK117084B (da) 1970-03-16
SE320128B (nl) 1970-02-02

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