BE661403A - - Google Patents
Info
- Publication number
- BE661403A BE661403A BE661403DA BE661403A BE 661403 A BE661403 A BE 661403A BE 661403D A BE661403D A BE 661403DA BE 661403 A BE661403 A BE 661403A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US353524A US3341755A (en) | 1964-03-20 | 1964-03-20 | Switching transistor structure and method of making the same |
Publications (1)
Publication Number | Publication Date |
---|---|
BE661403A true BE661403A (de) | 1965-07-16 |
Family
ID=23389487
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE661403D BE661403A (de) | 1964-03-20 | 1965-03-19 |
Country Status (4)
Country | Link |
---|---|
US (1) | US3341755A (de) |
BE (1) | BE661403A (de) |
DE (1) | DE1539079B2 (de) |
GB (1) | GB1041681A (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3384791A (en) * | 1964-09-10 | 1968-05-21 | Nippon Electric Co | High frequency semiconductor diode |
NL6606083A (de) * | 1965-06-22 | 1967-11-06 | Philips Nv | |
US3475664A (en) * | 1965-06-30 | 1969-10-28 | Texas Instruments Inc | Ambient atmosphere isolated semiconductor devices |
US3430110A (en) * | 1965-12-02 | 1969-02-25 | Rca Corp | Monolithic integrated circuits with a plurality of isolation zones |
US3440502A (en) * | 1966-07-05 | 1969-04-22 | Westinghouse Electric Corp | Insulated gate field effect transistor structure with reduced current leakage |
FR155459A (de) * | 1967-01-23 | |||
US3538397A (en) * | 1967-05-09 | 1970-11-03 | Motorola Inc | Distributed semiconductor power supplies and decoupling capacitor therefor |
US3447046A (en) * | 1967-05-31 | 1969-05-27 | Westinghouse Electric Corp | Integrated complementary mos type transistor structure and method of making same |
US3653988A (en) * | 1968-02-05 | 1972-04-04 | Bell Telephone Labor Inc | Method of forming monolithic semiconductor integrated circuit devices |
US3648128A (en) * | 1968-05-25 | 1972-03-07 | Sony Corp | An integrated complementary transistor circuit chip with polycrystalline contact to buried collector regions |
US3638081A (en) * | 1968-08-13 | 1972-01-25 | Ibm | Integrated circuit having lightly doped expitaxial collector layer surrounding base and emitter elements and heavily doped buried collector larger in contact with the base element |
US3569800A (en) * | 1968-09-04 | 1971-03-09 | Ibm | Resistively isolated integrated current switch |
US3547716A (en) * | 1968-09-05 | 1970-12-15 | Ibm | Isolation in epitaxially grown monolithic devices |
US3539884A (en) * | 1968-09-18 | 1970-11-10 | Motorola Inc | Integrated transistor and variable capacitor |
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
US3878551A (en) * | 1971-11-30 | 1975-04-15 | Texas Instruments Inc | Semiconductor integrated circuits having improved electrical isolation characteristics |
JPS4933758U (de) * | 1972-06-26 | 1974-03-25 | ||
US3858234A (en) * | 1973-01-08 | 1974-12-31 | Motorola Inc | Transistor having improved safe operating area |
US3992232A (en) * | 1973-08-06 | 1976-11-16 | Hitachi, Ltd. | Method of manufacturing semiconductor device having oxide isolation structure and guard ring |
JPS5753963A (ja) * | 1980-09-17 | 1982-03-31 | Toshiba Corp | Handotaisochi |
GB9013926D0 (en) * | 1990-06-22 | 1990-08-15 | Gen Electric Co Plc | A vertical pnp transistor |
JP3730483B2 (ja) * | 2000-06-30 | 2006-01-05 | 株式会社東芝 | バイポーラトランジスタ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3176376A (en) * | 1958-04-24 | 1965-04-06 | Motorola Inc | Method of making semiconductor device |
GB945747A (de) * | 1959-02-06 | Texas Instruments Inc | ||
US3173069A (en) * | 1961-02-15 | 1965-03-09 | Westinghouse Electric Corp | High gain transistor |
US3178798A (en) * | 1962-05-09 | 1965-04-20 | Ibm | Vapor deposition process wherein the vapor contains both donor and acceptor impurities |
BE636316A (de) * | 1962-08-23 | 1900-01-01 | ||
US3229119A (en) * | 1963-05-17 | 1966-01-11 | Sylvania Electric Prod | Transistor logic circuits |
GB1050417A (de) * | 1963-07-09 |
-
1964
- 1964-03-20 US US353524A patent/US3341755A/en not_active Expired - Lifetime
-
1965
- 1965-03-18 GB GB11548/65A patent/GB1041681A/en not_active Expired
- 1965-03-19 DE DE1539079A patent/DE1539079B2/de active Pending
- 1965-03-19 BE BE661403D patent/BE661403A/xx unknown
Also Published As
Publication number | Publication date |
---|---|
GB1041681A (en) | 1966-09-07 |
DE1539079A1 (de) | 1969-06-26 |
DE1539079B2 (de) | 1973-12-06 |
US3341755A (en) | 1967-09-12 |