BE653434A - - Google Patents

Info

Publication number
BE653434A
BE653434A BE653434DA BE653434A BE 653434 A BE653434 A BE 653434A BE 653434D A BE653434D A BE 653434DA BE 653434 A BE653434 A BE 653434A
Authority
BE
Belgium
Prior art keywords
substrate
film
thin
subjected
stress
Prior art date
Application number
Other languages
English (en)
French (fr)
Publication of BE653434A publication Critical patent/BE653434A/fr

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02Pretreatment of the material to be coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Magnetic Record Carriers (AREA)
BE653434D BE653434A (de)

Publications (1)

Publication Number Publication Date
BE653434A true BE653434A (de)

Family

ID=206286

Family Applications (1)

Application Number Title Priority Date Filing Date
BE653434D BE653434A (de)

Country Status (1)

Country Link
BE (1) BE653434A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2471273A1 (fr) * 1979-12-06 1981-06-19 Balzers Hochvakuum Procede pour recouvrir la surface d'un corps elastique d'une couche d'un seul tenant

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2471273A1 (fr) * 1979-12-06 1981-06-19 Balzers Hochvakuum Procede pour recouvrir la surface d'un corps elastique d'une couche d'un seul tenant

Similar Documents

Publication Publication Date Title
KR950015410A (ko) 자기 저항 센서 및 자기 저항 센서 제조방법
Chang Reversed magnetic anisotropy in deformed (100) Cu/Ni/Cu structures
US7598596B2 (en) Methods and apparatus for a dual-metal magnetic shield structure
BE653434A (de)
Wulfhekel et al. Magnetic anisotropy of Co on Cu (1 1 17)
Schatz et al. Magnetic properties of giant magnetostrictive TbDyFe films
US5502381A (en) Stress sensor using magnetostriction thin film
Duden et al. Spin-polarized low energy electron microscopy of ferromagnetic layers
Wun-Fogle et al. Magnetostriction and magnetization of common high strength steels
DE102005051332B4 (de) Halbleitersubstrat, Halbleiterchip, Halbleiterbauteil und Verfahren zur Herstellung eines Halbleiterbauteils
FR2828001A1 (fr) Dispositif de commande de renversement de sens d'aimantation sans champ magnetique externe
Wedler et al. Magnetoelastic coupling of compressively stressed Fe/GaAs (001)
Atulasimha et al. Effect of stoichiometry on sensing behavior of iron-gallium
Wang et al. The converse piezoelectric effect on electron tunnelling across a junction with a ferroelectric–ferromagnetic composite barrier
US7410888B2 (en) Method for manufacturing strained silicon
Shim et al. Magnetostrictive Performance of Electrodeposited TB X DY (1-X) FE Y Thin Filmevaluated from Microactuator
Lee et al. The effect of annealing temperature on the microstructure of nanoindented Au/Cr/Si thin films
JPS5884477A (ja) プレ−ナ・ホ−ル素子
KR100284465B1 (ko) Sm계거대자기변형박막및그제조방법
FR2677811A1 (fr) Dispositif incluant un super-reseau de couches ayant des proprietes de magnetoresistance geante realisees sur un substrat semiconducteur.
KR950008825B1 (ko) 스트레인검출기
EP2597655A1 (de) Herstellungsverfahren einer Vorrichtung enthaltend mehrere magnetische Einheiten in verschiedene Richtungen magnetisiert
Angot et al. Hydrogen-induced semimetal-semiconductor transition of two-dimensional ErSi2 detected by electron energy loss spectroscopy
Oepts et al. Enhanced anisotropy of permalloy layers sputter deposited on V-grooved substrates and tilted surfaces
KR100253743B1 (ko) 메모리용 자기저항소자의 제조방법