BE650629A - - Google Patents
Info
- Publication number
- BE650629A BE650629A BE650629DA BE650629A BE 650629 A BE650629 A BE 650629A BE 650629D A BE650629D A BE 650629DA BE 650629 A BE650629 A BE 650629A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/016—Catalyst
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/052—Face to face deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/054—Flat sheets-substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/912—Charge transfer device using both electron and hole signal carriers
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1963S0086211 DE1521956C2 (de) | 1963-07-17 | 1963-07-17 | Verfahren zum Herstellen reiner Oberflächen von Halbleiterkörpern mit Hilfe eines halogenwasserstoffhaltigen Gasgemisches |
DES86210A DE1238105B (de) | 1963-07-17 | 1963-07-17 | Verfahren zum Herstellen von pn-UEbergaengen in Silizium |
Publications (1)
Publication Number | Publication Date |
---|---|
BE650629A true BE650629A (xx) | 1965-01-18 |
Family
ID=25997306
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE650067D BE650067A (xx) | 1963-07-17 | 1964-07-03 | |
BE650629D BE650629A (xx) | 1963-07-17 | 1964-07-16 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE650067D BE650067A (xx) | 1963-07-17 | 1964-07-03 |
Country Status (7)
Country | Link |
---|---|
US (2) | US3409481A (xx) |
BE (2) | BE650067A (xx) |
CH (2) | CH458542A (xx) |
DE (1) | DE1238105B (xx) |
FR (2) | FR1435786A (xx) |
GB (2) | GB1023070A (xx) |
NL (2) | NL6408008A (xx) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3522118A (en) * | 1965-08-17 | 1970-07-28 | Motorola Inc | Gas phase etching |
US3511702A (en) * | 1965-08-20 | 1970-05-12 | Motorola Inc | Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen |
US3546036A (en) * | 1966-06-13 | 1970-12-08 | North American Rockwell | Process for etch-polishing sapphire and other oxides |
US3536522A (en) * | 1968-05-21 | 1970-10-27 | Texas Instruments Inc | Method for purification of reaction gases |
US4089735A (en) * | 1968-06-05 | 1978-05-16 | Siemens Aktiengesellschaft | Method for epitactic precipitation of crystalline material from a gaseous phase, particularly for semiconductors |
GB1555762A (en) * | 1975-08-14 | 1979-11-14 | Mullard Ltd | Method of cleaning surfaces |
US4039357A (en) * | 1976-08-27 | 1977-08-02 | Bell Telephone Laboratories, Incorporated | Etching of III-V semiconductor materials with H2 S in the preparation of heterodiodes to facilitate the deposition of cadmium sulfide |
US6162705A (en) | 1997-05-12 | 2000-12-19 | Silicon Genesis Corporation | Controlled cleavage process and resulting device using beta annealing |
US20070122997A1 (en) | 1998-02-19 | 2007-05-31 | Silicon Genesis Corporation | Controlled process and resulting device |
US8187377B2 (en) * | 2002-10-04 | 2012-05-29 | Silicon Genesis Corporation | Non-contact etch annealing of strained layers |
DE10393440T5 (de) | 2002-10-04 | 2005-07-28 | Silicon Genesis Corp., San Jose | Verfahren zum Behandeln von Halbleitermaterial |
US7390724B2 (en) * | 2004-04-12 | 2008-06-24 | Silicon Genesis Corporation | Method and system for lattice space engineering |
US7094666B2 (en) * | 2004-07-29 | 2006-08-22 | Silicon Genesis Corporation | Method and system for fabricating strained layers for the manufacture of integrated circuits |
US8293619B2 (en) | 2008-08-28 | 2012-10-23 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled propagation |
US9362439B2 (en) | 2008-05-07 | 2016-06-07 | Silicon Genesis Corporation | Layer transfer of films utilizing controlled shear region |
US8993410B2 (en) | 2006-09-08 | 2015-03-31 | Silicon Genesis Corporation | Substrate cleaving under controlled stress conditions |
US7811900B2 (en) | 2006-09-08 | 2010-10-12 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a thick layer transfer process |
US7776152B2 (en) * | 2006-11-01 | 2010-08-17 | Raytheon Company | Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth |
US8330126B2 (en) | 2008-08-25 | 2012-12-11 | Silicon Genesis Corporation | Race track configuration and method for wafering silicon solar substrates |
US8329557B2 (en) | 2009-05-13 | 2012-12-11 | Silicon Genesis Corporation | Techniques for forming thin films by implantation with reduced channeling |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA720601A (en) * | 1965-11-02 | J. Corrigan Wilfred | Gas etching | |
DE943422C (de) * | 1949-04-02 | 1956-05-17 | Licentia Gmbh | Gesteuerter Trockengleichrichter, insbesondere mit Germanium, Silizium oder Siliziumkarbid als halbleitender Substanz |
US2744002A (en) * | 1953-08-24 | 1956-05-01 | Republic Steel Corp | Process of making powdered iron in a discrete crystalline form |
AT224165B (de) * | 1960-02-12 | 1962-11-12 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung |
US3168422A (en) * | 1960-05-09 | 1965-02-02 | Merck & Co Inc | Process of flushing unwanted residue from a vapor deposition system in which silicon is being deposited |
AT222183B (de) * | 1960-06-03 | 1962-07-10 | Siemens Ag | Verfahren zur Abscheidung von Halbleitermaterial |
NL268294A (xx) * | 1960-10-10 | |||
US3172792A (en) * | 1961-07-05 | 1965-03-09 | Epitaxial deposition in a vacuum onto semiconductor wafers through an in- teracttgn between the wafer and the support material | |
NL288035A (xx) * | 1962-01-24 | |||
US3243323A (en) * | 1962-06-11 | 1966-03-29 | Motorola Inc | Gas etching |
NL296876A (xx) * | 1962-08-23 | |||
NL296877A (xx) * | 1962-08-23 |
-
1963
- 1963-07-17 DE DES86210A patent/DE1238105B/de active Pending
-
1964
- 1964-06-15 CH CH776064A patent/CH458542A/de unknown
- 1964-06-30 CH CH854964A patent/CH423728A/de unknown
- 1964-07-03 BE BE650067D patent/BE650067A/xx unknown
- 1964-07-13 US US382009A patent/US3409481A/en not_active Expired - Lifetime
- 1964-07-13 US US382230A patent/US3392069A/en not_active Expired - Lifetime
- 1964-07-14 NL NL6408008A patent/NL6408008A/xx unknown
- 1964-07-16 FR FR981907A patent/FR1435786A/fr not_active Expired
- 1964-07-16 NL NL6408121A patent/NL6408121A/xx unknown
- 1964-07-16 BE BE650629D patent/BE650629A/xx unknown
- 1964-07-16 FR FR981906A patent/FR1401011A/fr not_active Expired
- 1964-08-04 GB GB30480/64A patent/GB1023070A/en not_active Expired
- 1964-08-04 GB GB30485/64A patent/GB1025984A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3409481A (en) | 1968-11-05 |
FR1401011A (fr) | 1965-05-28 |
NL6408121A (xx) | 1965-01-18 |
CH423728A (de) | 1966-11-15 |
US3392069A (en) | 1968-07-09 |
GB1025984A (en) | 1966-04-14 |
DE1238105B (de) | 1967-04-06 |
FR1435786A (fr) | 1966-04-22 |
BE650067A (xx) | 1964-11-03 |
NL6408008A (xx) | 1965-01-18 |
GB1023070A (en) | 1966-03-16 |
CH458542A (de) | 1968-06-30 |