BE648499A - - Google Patents

Info

Publication number
BE648499A
BE648499A BE648499A BE648499A BE648499A BE 648499 A BE648499 A BE 648499A BE 648499 A BE648499 A BE 648499A BE 648499 A BE648499 A BE 648499A BE 648499 A BE648499 A BE 648499A
Authority
BE
Belgium
Application number
BE648499A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE648499A publication Critical patent/BE648499A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/32Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004Devices characterised by their operation
    • H01L33/0008Devices characterised by their operation having p-n or hi-lo junctions
    • H01L33/0016Devices characterised by their operation having p-n or hi-lo junctions having at least two p-n junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
BE648499A 1963-05-27 1964-05-27 BE648499A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US283414A US3283207A (en) 1963-05-27 1963-05-27 Light-emitting transistor system

Publications (1)

Publication Number Publication Date
BE648499A true BE648499A (xx) 1964-09-19

Family

ID=23085947

Family Applications (1)

Application Number Title Priority Date Filing Date
BE648499A BE648499A (xx) 1963-05-27 1964-05-27

Country Status (5)

Country Link
US (1) US3283207A (xx)
BE (1) BE648499A (xx)
DE (1) DE1219120B (xx)
GB (1) GB1062202A (xx)
NL (1) NL6405855A (xx)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1119522A (en) * 1964-08-19 1968-07-10 Mullard Ltd Improvements in opto-electronic semiconductor devices
US3443140A (en) * 1965-04-06 1969-05-06 Gen Electric Light emitting semiconductor devices of improved transmission characteristics
US3398311A (en) * 1965-12-29 1968-08-20 Westinghouse Electric Corp Electroluminescent device
JPS4931594B1 (xx) * 1966-05-18 1974-08-22
US3558889A (en) * 1966-11-02 1971-01-26 Rca Corp Bulk semiconductor light radiating device
US3428845A (en) * 1966-11-21 1969-02-18 Rca Corp Light-emitting semiconductor having relatively heavy outer layers for heat-sinking
DE1614846B2 (de) * 1967-07-26 1976-09-23 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Halbleiterdiodenanordnung
US3703670A (en) * 1969-02-28 1972-11-21 Corning Glass Works Electroluminescent diode configuration and method of forming the same
US3877052A (en) * 1973-12-26 1975-04-08 Bell Telephone Labor Inc Light-emitting semiconductor apparatus for optical fibers
GB1458544A (en) * 1974-03-21 1976-12-15 Standard Telephones Cables Ltd Semiconductor laser stacks
DE2430313A1 (de) * 1974-06-24 1976-01-15 Siemens Ag Optische mehrschicht-halbleiterstrahlungsquelle
CH600578A5 (xx) * 1974-09-05 1978-06-15 Centre Electron Horloger
US4240090A (en) * 1978-06-14 1980-12-16 Rca Corporation Electroluminescent semiconductor device with fiber-optic face plate
CA1271550C (en) * 1985-12-24 1990-07-10 SEMICONDUCTOR LUMINESCENT DEVICE, ILLUMINATING VERTICALLY
JP3738824B2 (ja) * 2000-12-26 2006-01-25 セイコーエプソン株式会社 光学装置及びその製造方法並びに電子機器
JP2019046887A (ja) * 2017-08-31 2019-03-22 株式会社沖データ 半導体発光素子、発光素子アレイ、及び光プリントヘッド

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE955977C (de) * 1952-10-23 1957-01-10 Siemens Ag Elektronische Kontaktanordnung zu Schalt- und Kodierungszwecken
US2981851A (en) * 1957-12-06 1961-04-25 Bell Telephone Labor Inc Constant output impedance network
FR1193194A (fr) * 1958-03-12 1959-10-30 Perfectionnements aux procédés de fabrication par diffusion des transistors et des redresseurs à jonctions
US3210622A (en) * 1959-09-11 1965-10-05 Philips Corp Photo-transistor

Also Published As

Publication number Publication date
DE1219120B (de) 1966-06-16
GB1062202A (en) 1967-03-15
US3283207A (en) 1966-11-01
NL6405855A (xx) 1964-11-30

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