BE647011A - Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques - Google Patents

Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques

Info

Publication number
BE647011A
BE647011A BE647011A BE647011A BE647011A BE 647011 A BE647011 A BE 647011A BE 647011 A BE647011 A BE 647011A BE 647011 A BE647011 A BE 647011A BE 647011 A BE647011 A BE 647011A
Authority
BE
Belgium
Prior art keywords
emi
tecnetrons
limitation
semiconductor devices
electric currents
Prior art date
Application number
BE647011A
Other languages
English (en)
French (fr)
Inventor
Stanislas Teszner
Original Assignee
Forges Et Ateliers De Constructions Electriques De Jeumont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forges Et Ateliers De Constructions Electriques De Jeumont filed Critical Forges Et Ateliers De Constructions Electriques De Jeumont
Publication of BE647011A publication Critical patent/BE647011A/fr

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/46—
    • H10P95/00—
    • H10W40/226—
    • H10W76/132—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H10W90/753—
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
BE647011A 1957-11-30 1964-04-23 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques BE647011A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR752813A FR72535E (fr) 1957-11-30 1957-11-30 Dispositif à semi-conducteur dit transistron unipolaire de puissance
FR867727A FR1301942A (fr) 1957-11-30 1961-07-11 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques

Publications (1)

Publication Number Publication Date
BE647011A true BE647011A (fr) 1964-05-13

Family

ID=74668069

Family Applications (2)

Application Number Title Priority Date Filing Date
BE647011A BE647011A (fr) 1957-11-30 1964-04-23 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques
BE655057A BE655057Q (fr) 1957-11-30 1964-10-30 Transistor de puissance à effet de champ

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE655057A BE655057Q (fr) 1957-11-30 1964-10-30 Transistor de puissance à effet de champ

Country Status (3)

Country Link
BE (2) BE647011A (enExample)
FR (3) FR1163241A (enExample)
NL (2) NL101320C (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1129625B (de) * 1958-05-23 1962-05-17 Telefunken Patent Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt
US3044909A (en) * 1958-10-23 1962-07-17 Shockley William Semiconductive wafer and method of making the same
DE1114939B (de) * 1960-02-09 1961-10-12 Intermetall Verfahren zur gleichzeitigen Herstellung mehrerer flaechenhafter Halbleiteranordnungen
NL123575C (enExample) * 1960-04-01
US3281699A (en) * 1963-02-25 1966-10-25 Rca Corp Insulated-gate field-effect transistor oscillator circuits

Also Published As

Publication number Publication date
NL101320C (nl) 1962-05-15
FR72535E (fr) 1960-04-14
NL223101A (enExample) 1900-01-01
FR1163241A (fr) 1958-09-23
BE655057Q (fr) 1965-02-15
FR1301942A (fr) 1962-08-24

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