BE647011A - Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques - Google Patents

Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques

Info

Publication number
BE647011A
BE647011A BE647011A BE647011A BE647011A BE 647011 A BE647011 A BE 647011A BE 647011 A BE647011 A BE 647011A BE 647011 A BE647011 A BE 647011A BE 647011 A BE647011 A BE 647011A
Authority
BE
Belgium
Prior art keywords
emi
tecnetrons
limitation
semiconductor devices
electric currents
Prior art date
Application number
BE647011A
Other languages
English (en)
Inventor
Stanislas Teszner
Original Assignee
Forges Et Ateliers De Constructions Electriques De Jeumont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Forges Et Ateliers De Constructions Electriques De Jeumont filed Critical Forges Et Ateliers De Constructions Electriques De Jeumont
Publication of BE647011A publication Critical patent/BE647011A/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/045—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body the other leads having an insulating passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3672—Foil-like cooling fins or heat sinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Description


   <EMI ID=1.1> 

  
 <EMI ID=2.1> 

  
 <EMI ID=3.1> 

  
 <EMI ID=4.1>  

  
 <EMI ID=5.1>   <EMI ID=6.1> 

  
 <EMI ID=7.1> 

  
 <EMI ID=8.1>  franchement extrinsèque" 

  
 <EMI ID=9.1> 

  

 <EMI ID=10.1> 


  
 <EMI ID=11.1> 

  
, ' tour de courant.

  
 <EMI ID=12.1> 

  
 <EMI ID=13.1> 

  
l'état dit passant ou le dispositif doit être rendu le plus

  
 <EMI ID=14.1> 

  
semiconducteur s'apparente à celui d'un amplificateur bloque, au contraire, à l'état passant il en diffère totalement.

  
La conciliation de ces caractéristiques apparemment contra*-,

  
 <EMI ID=15.1>   <EMI ID=16.1> 

  
 <EMI ID=17.1> 

  
 <EMI ID=18.1> 

  
 <EMI ID=19.1>   <EMI ID=20.1>   <EMI ID=21.1> 

  
*MO<t  <EMI ID=22.1> 

  
type n), le contact de l'extrémité opposée constituant une

  
 <EMI ID=23.1> 

  
 <EMI ID=24.1> 

  
 <EMI ID=25.1> 

  
service du dispositif.

  
 <EMI ID=26.1> 

  
 <EMI ID=27.1> 

  
 <EMI ID=28.1> 

  
 <EMI ID=29.1> 

  
rant de service nominal*

  
 <EMI ID=30.1> 

  
d'assurer une diffusion des porteurs minoritaires dans  <EMI ID=31.1>   <EMI ID=32.1> 

  
bande interdite fournit en môme tempe la liait" supérieur"

  
 <EMI ID=33.1> 

  
 <EMI ID=34.1> 

  
largeur de la banda interdite puisque la limite supérieure de résistivité fixe la limite inférieure du produit du

  
 <EMI ID=35.1> 

  
de porteurs. Corne d'autre part, le nombre de porteurs est  <EMI ID=36.1> 

  
trou 

  
Cependant* l'énonce des limite* donné ci-dessus est

  
 <EMI ID=37.1> 

  
 <EMI ID=38.1> 

  

 <EMI ID=39.1> 


  
 <EMI ID=40.1> 

  

 <EMI ID=41.1> 


  
 <EMI ID=42.1>  diode de goulot en toute sécurité. Or, pour une tension

  
 <EMI ID=43.1> 

  

 <EMI ID=44.1> 


  
Autant une constante. 

  
 <EMI ID=45.1> 

  
 <EMI ID=46.1> 

  

 <EMI ID=47.1> 


  
 <EMI ID=48.1> 

  
Dans le cas d'un semi-conducteur riche en porte=*$ aine-

  
 <EMI ID=49.1> 

  

 <EMI ID=50.1> 


  
 <EMI ID=51.1> 

  
attirée sont éliminés et avec eux, en nombre égal, des porteurs

  
 <EMI ID=52.1> 

  
 <EMI ID=53.1> 

  
inférieur au délai de régénération de ces porteurs , que la

  
 <EMI ID=54.1> 

  
 <EMI ID=55.1> 

  

 <EMI ID=56.1> 


  
 <EMI ID=57.1> 

  
précis à titre d'exemple 

  
 <EMI ID=58.1> 

  
 <EMI ID=59.1> 

  
 <EMI ID=60.1> 

  
tien des porteurs minoritaires par le champ longitudinal et  <EMI ID=61.1> 

  

 <EMI ID=62.1> 


  
 <EMI ID=63.1> 

  
 <EMI ID=64.1> 

  

 <EMI ID=65.1> 


  
 <EMI ID=66.1> 

  

 <EMI ID=67.1> 


  
On constate qu'on ne gagne ici aucunement sur la valeur

  
 <EMI ID=68.1> 

  
 <EMI ID=69.1> 

  
l'emploi d'un. telle substance avec une injection de porteurs minoritaires, au moins par l'une des électrodes terminales si éventuellement aussi par la diode de goulots 

  
 <EMI ID=70.1> 

  
est au contraire faible vis-à-vis du délai de leur élimination, la conductivité sera régie par la relation (5). Or, le rayon r sera toujours fourni par la relation (8), puisque l'injection de porteurs minoritaires doit disparaître à

  
 <EMI ID=71.1> 

  
la valeur de la résistance l'expression suivante 

  

 <EMI ID=72.1> 


  
 <EMI ID=73.1> 

  
 <EMI ID=74.1> 

  
ainsi réalisé est 
 <EMI ID=75.1> 
  <EMI ID=76.1> 

  
 <EMI ID=77.1> 

  
 <EMI ID=78.1> 

  
Il est bien entendu qu'une nouvelle réduction de la

  
 <EMI ID=79.1> 

  
nombre de porteurs minoritaires au-delà de l'état normal

  
 <EMI ID=80.1> 

  
d'injection de porteurs soit élevé et que d'autre parti leur

  
 <EMI ID=81.1> 

  
 <EMI ID=82.1> 

  
 <EMI ID=83.1> 

  
goulot.

  
La réalisation des contacts d'extrémité répondant au schéma équivalent d'une diode shuntée par une résistance non-* linéaire, schéma représenté par la Pigé 4; peut être obtenue

  
 <EMI ID=84.1> 

  
 <EMI ID=85.1> 

  
Les surfaces terminales sont d'abord traitées dans un

  
 <EMI ID=86.1> 

  
 <EMI ID=87.1> 

  
 <EMI ID=88.1>  <EMI ID=89.1> 

  
On produit de la aorte en surface une couche d'oxyde

  
 <EMI ID=90.1> 

  
 <EMI ID=91.1> 

  
 <EMI ID=92.1> 

  
 <EMI ID=93.1> 

  
composante essentiels le plomb et l'étain, et et, opérant à

  
 <EMI ID=94.1>  

  
 <EMI ID=95.1> 

  
 <EMI ID=96.1> 

  
 <EMI ID=97.1> 

  
 <EMI ID=98.1> 

  
 <EMI ID=99.1> 

  
de la couche d'oxyde, qui assurent le fonctionnement du

  
 <EMI ID=100.1> 

  
de connexion métallique soudée*

  
 <EMI ID=101.1> 

  
 <EMI ID=102.1> 

  
 <EMI ID=103.1> 

  
titre simplement indicatif une relation entre

  
 <EMI ID=104.1> 

  
 <EMI ID=105.1> 

  
de diffusion des porteur$ minoritaires de la substance   <EMI ID=106.1>   <EMI ID=107.1>  

  
 <EMI ID=108.1>  formée par 1'embase avec la pluralité des bâtonnets qui en

  
 <EMI ID=109.1> 

  
usinage par ultra-sono" On procède alors à l'étamage de la face libre de l'embase, après quoi la structure est soumise

  
 <EMI ID=110.1> 

  
 <EMI ID=111.1> 

  
 <EMI ID=112.1> 

  
 <EMI ID=113.1> 

  
Ensuite la structure coiffée d'une grille 16 en indium et placée sur une plaquette métallique 19 *et mise tans, un

  
 <EMI ID=114.1> 

  
l'alliage indium-germanium, A cet effet elle cet portée pro-

  
 <EMI ID=115.1> 

  
 <EMI ID=116.1> 

  
 <EMI ID=117.1> 

  
 <EMI ID=118.1> 

  
 <EMI ID=119.1> 

  
 <EMI ID=120.1> 

  
 <EMI ID=121.1> 

  
 <EMI ID=122.1> 

  
 <EMI ID=123.1> 

  
 <EMI ID=124.1> 

  
 <EMI ID=125.1> 

  
 <EMI ID=126.1>   <EMI ID=127.1> 

  
tous

  
 <EMI ID=128.1> 

  
 <EMI ID=129.1> 

  
 <EMI ID=130.1> 

  
 <EMI ID=131.1> 

  
 <EMI ID=132.1> 

  
toutes considérations égale$ d'ailleurs$ une tension inverse

  
 <EMI ID=133.1>   <EMI ID=134.1>

Claims (1)

  1. <EMI ID=135.1> <EMI ID=136.1>
    d'où il résulte une injection de porteurs de charge minori-
    <EMI ID=137.1>
    <EMI ID=138.1>
    quel que soit le mono de passage du courant"
    <EMI ID=139.1>
    <EMI ID=140.1>
    <EMI ID=141.1>
    <EMI ID=142.1>
    minoritaires par la partie du goulot polarisés dans le sens
    <EMI ID=143.1>
    <EMI ID=144.1>
    proche de l'intrinsèque avec une bande interdite d'une lar-
    <EMI ID=145.1>
    <EMI ID=146.1>
    <EMI ID=147.1>
    <EMI ID=148.1>
    <EMI ID=149.1>
    <EMI ID=150.1>
BE647011A 1957-11-30 1964-04-23 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques BE647011A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR752813A FR72535E (fr) 1957-11-30 1957-11-30 Dispositif à semi-conducteur dit transistron unipolaire de puissance
FR867727A FR1301942A (fr) 1957-11-30 1961-07-11 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques

Publications (1)

Publication Number Publication Date
BE647011A true BE647011A (fr) 1964-05-13

Family

ID=74668069

Family Applications (2)

Application Number Title Priority Date Filing Date
BE647011A BE647011A (fr) 1957-11-30 1964-04-23 Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques
BE655057A BE655057Q (fr) 1957-11-30 1964-10-30 Transistor de puissance à effet de champ

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE655057A BE655057Q (fr) 1957-11-30 1964-10-30 Transistor de puissance à effet de champ

Country Status (3)

Country Link
BE (2) BE647011A (fr)
FR (3) FR1163241A (fr)
NL (2) NL101320C (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1129625B (de) * 1958-05-23 1962-05-17 Telefunken Patent Drifttransistor, bei dem der spezifische Widerstand in der Basiszone von der Emitter-zur Kollektorzone zunimmt
US3044909A (en) * 1958-10-23 1962-07-17 Shockley William Semiconductive wafer and method of making the same
DE1114939B (de) * 1960-02-09 1961-10-12 Intermetall Verfahren zur gleichzeitigen Herstellung mehrerer flaechenhafter Halbleiteranordnungen
NL123575C (fr) * 1960-04-01
US3281699A (en) * 1963-02-25 1966-10-25 Rca Corp Insulated-gate field-effect transistor oscillator circuits

Also Published As

Publication number Publication date
FR1163241A (fr) 1958-09-23
FR1301942A (fr) 1962-08-24
FR72535E (fr) 1960-04-14
BE655057Q (fr) 1965-02-15
NL223101A (fr) 1900-01-01
NL101320C (nl) 1962-05-15

Similar Documents

Publication Publication Date Title
US2654059A (en) Semiconductor signal translating device
US3886577A (en) Filament-type memory semiconductor device and method of making the same
Jones et al. Negative capacitance effects in semiconductor diodes
Reddy et al. Multilevel conductance switching in organic memory devices based on AlQ3 and Al/Al2O3 core-shell nanoparticles
EP0084393B1 (fr) Dispositif semiconducteur du genre transistor à hétérojonction(s)
US3027501A (en) Semiconductive device
US4583110A (en) Intermetallic semiconductor ohmic contact
US4799125A (en) Circuit protection arrangement
JPS6331173A (ja) 半導体装置
BE647011A (fr) Dispositifs à semi-conducteur dits tecnetrons pour redressement commandé et limitation de forts courants électriques
Ali et al. In situ transmission electron microscopy study of molybdenum oxide contacts for silicon solar cells
FR2546335A1 (fr) Structure de transistor bipolaire de puissance a resistance compensatrice de base incorporee by-passable
US3654531A (en) Electronic switch utilizing a semiconductor with deep impurity levels
EP0264415A1 (fr) Composant semiconducteur de protection contre les surtensions et surintensites.
US3310502A (en) Semiconductor composition with negative resistance characteristics at extreme low temperatures
FR2569056A1 (fr) Transistor a induction statique du type a injection par effet tunnel et circuit integre comprenant un tel transistor
Suntola On the mechanism of switching effects in chalcogenide thin films
US3087100A (en) Ohmic contacts to semiconductor devices
EP0077706B1 (fr) Transistor à effet de champ à canal vertical
EP0027761B1 (fr) Dispositif semiconducteur à effet de champ pour hautes fréquences et transistor utilisant un tel dispositif semiconducteur
US3141119A (en) Hyperconductive transistor switches
FR2661288A1 (fr) Limiteur de courant hybride.
Mazzola et al. Evaluation of transport effects on the performance of a laser-controlled GaAs Switch
EP0083621B1 (fr) Procede d&#39;augmentation de la temperature critique de supraconduction dans les supraconducteurs organiques quasi-unidimensionnels et nouveaux composes supraconducteurs ainsi obtenus
Grubin Large-signal computer simulations of the contact, circuit, and bias dependence of X-band transferred electron oscillators