BE646006A - - Google Patents
Info
- Publication number
- BE646006A BE646006A BE646006DA BE646006A BE 646006 A BE646006 A BE 646006A BE 646006D A BE646006D A BE 646006DA BE 646006 A BE646006 A BE 646006A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C7/00—Modulating electromagnetic waves
- H03C7/02—Modulating electromagnetic waves in transmission lines, waveguides, cavity resonators or radiation fields of antennas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C1/00—Amplitude modulation
- H03C1/34—Amplitude modulation by means of light-sensitive element
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/08—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
- H03F3/085—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light using opto-couplers between stages
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0035—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements
- H03G1/0047—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using continuously variable impedance elements using photo-electric elements
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES84504A DE1177212B (de) | 1963-04-01 | 1963-04-01 | Verstaerkereinrichtung fuer elektromagnetische Schwingungen |
| DES88824A DE1180787B (de) | 1963-04-01 | 1963-12-20 | Verstaerkereinrichtung fuer elektro-magnetische Schwingungen |
| DES88823A DE1180786B (de) | 1963-04-01 | 1963-12-20 | Verstaerkereinrichtung fuer elektro-magnetische Schwingungen |
| DES89239A DE1217463B (de) | 1963-04-01 | 1964-01-27 | Einrichtung zur Modulation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE646006A true BE646006A (xx) | 1964-10-01 |
Family
ID=27437561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE646006D BE646006A (xx) | 1963-04-01 | 1964-04-01 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US3384837A (xx) |
| BE (1) | BE646006A (xx) |
| CH (1) | CH446548A (xx) |
| DE (4) | DE1177212B (xx) |
| GB (1) | GB1022307A (xx) |
| NL (1) | NL6403216A (xx) |
| SE (1) | SE313378B (xx) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3518659A (en) * | 1965-07-19 | 1970-06-30 | Bell Telephone Labor Inc | High speed light switch |
| DE1278523B (de) * | 1966-09-27 | 1968-09-26 | Standard Elektrik Lorenz Ag | Verstaerkeranordnung mit fotoelektrischen Koppelelementen |
| JPS5531635B1 (xx) * | 1969-12-05 | 1980-08-19 | ||
| US3723737A (en) * | 1971-05-18 | 1973-03-27 | North American Rockwell | Infrared detection and control device |
| US3755697A (en) * | 1971-11-26 | 1973-08-28 | Hewlett Packard Co | Light-emitting diode driver |
| US3772916A (en) * | 1971-12-08 | 1973-11-20 | Bennett Pump Inc | Variable increment transducer for fluid flow metering systems |
| JPS4889602A (xx) * | 1972-02-25 | 1973-11-22 | ||
| JPS4941056A (xx) * | 1972-08-25 | 1974-04-17 | ||
| US4054794A (en) * | 1975-03-12 | 1977-10-18 | Varo, Inc. | Optical communications link |
| US4177434A (en) * | 1978-05-30 | 1979-12-04 | E. I. Du Pont De Nemours And Company | Constant amplitude control of electromechanical oscillators |
| SE414429B (sv) * | 1978-10-27 | 1980-07-28 | Asea Ab | Metdon med optisk signaloverforing |
| US4356457A (en) * | 1980-09-02 | 1982-10-26 | General Dynamics, Pomona Division | Optic floating deck modulator |
| DE3210086A1 (de) * | 1982-03-19 | 1983-09-22 | Siemens AG, 1000 Berlin und 8000 München | Lumineszenzdiode, geeignet als drucksensor |
| DE3633939A1 (de) * | 1986-10-04 | 1988-04-14 | Heraeus Gmbh W C | Uebertragung von signalen aus einer sensoreinheit |
| FR2801742B1 (fr) | 1999-11-26 | 2002-05-03 | Centre Nat Rech Scient | Circuit hybride haute tension |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2648823A (en) * | 1950-01-06 | 1953-08-11 | Bell Telephone Labor Inc | Thermoelectric translation device |
| US2776367A (en) * | 1952-11-18 | 1957-01-01 | Lebovec Kurt | Photon modulation in semiconductors |
| US3040178A (en) * | 1957-07-09 | 1962-06-19 | Westinghouse Electric Corp | Logic circuitry |
| US3072012A (en) * | 1958-07-07 | 1963-01-08 | Cluett Peabody & Co Inc | Wrinkle measuring device |
| US3100282A (en) * | 1958-10-29 | 1963-08-06 | Beckman Instruments Inc | Shielding amplifier circuit |
| US3043958A (en) * | 1959-09-14 | 1962-07-10 | Philips Corp | Circuit element |
| US3183452A (en) * | 1959-12-17 | 1965-05-11 | Westinghouse Electric Corp | Multivibrator using electroluminescent-photoconductive control elements |
| US3143655A (en) * | 1960-01-25 | 1964-08-04 | Malcolm W P Strandberg | Photosensitive switching device in a waveguide |
| NL285461A (xx) * | 1962-11-13 | |||
| US3278814A (en) * | 1962-12-14 | 1966-10-11 | Ibm | High-gain photon-coupled semiconductor device |
| US3229104A (en) * | 1962-12-24 | 1966-01-11 | Ibm | Four terminal electro-optical semiconductor device using light coupling |
| US3138768A (en) * | 1962-12-17 | 1964-06-23 | Gary E Evans | Microwave diode switch having by-pass means to cancel signal leak when diode is blocked |
| DE1264513C2 (de) * | 1963-11-29 | 1973-01-25 | Texas Instruments Inc | Bezugspotentialfreier gleichstromdifferenzverstaerker |
-
1963
- 1963-04-01 DE DES84504A patent/DE1177212B/de active Pending
- 1963-12-20 DE DES88823A patent/DE1180786B/de active Pending
- 1963-12-20 DE DES88824A patent/DE1180787B/de active Pending
-
1964
- 1964-01-27 DE DES89239A patent/DE1217463B/de active Pending
- 1964-03-24 CH CH378564A patent/CH446548A/de unknown
- 1964-03-25 NL NL6403216A patent/NL6403216A/xx unknown
- 1964-03-31 SE SE3932/64A patent/SE313378B/xx unknown
- 1964-04-01 GB GB13349/64A patent/GB1022307A/en not_active Expired
- 1964-04-01 BE BE646006D patent/BE646006A/xx unknown
-
1965
- 1965-01-21 US US427183A patent/US3384837A/en not_active Expired - Lifetime
-
1968
- 1968-08-26 US US778355*A patent/US3652859A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US3384837A (en) | 1968-05-21 |
| US3652859A (en) | 1972-03-28 |
| SE313378B (xx) | 1969-08-11 |
| DE1180786B (de) | 1964-11-05 |
| DE1180787B (de) | 1964-11-05 |
| GB1022307A (en) | 1966-03-09 |
| DE1177212B (de) | 1964-09-03 |
| DE1217463B (de) | 1966-05-26 |
| NL6403216A (xx) | 1964-10-02 |
| CH446548A (de) | 1967-11-15 |