BE639633A - - Google Patents
Info
- Publication number
- BE639633A BE639633A BE639633DA BE639633A BE 639633 A BE639633 A BE 639633A BE 639633D A BE639633D A BE 639633DA BE 639633 A BE639633 A BE 639633A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/676—Combinations of only thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US235986A US3280386A (en) | 1962-11-07 | 1962-11-07 | Semiconductor a.c. switch device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE639633A true BE639633A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Family
ID=22887667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE639633D BE639633A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1962-11-07 |
Country Status (4)
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3360712A (en) * | 1963-12-27 | 1967-12-26 | Gen Electric | Time ratio control and inverter power circuits |
| US3399390A (en) * | 1964-05-28 | 1968-08-27 | Rca Corp | Integrated semiconductor diode matrix |
| US3440438A (en) * | 1965-11-17 | 1969-04-22 | Webcor Inc | Semiconductor controlled rectifier current control |
| US3430072A (en) * | 1966-01-11 | 1969-02-25 | Us Navy | Sample and hold circuit |
| US3562610A (en) * | 1967-05-25 | 1971-02-09 | Westinghouse Electric Corp | Controlled rectifier with improved switching characteristics |
| US3418489A (en) * | 1967-08-09 | 1968-12-24 | Lon H Romanski | Switching circuit |
| US3628106A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with protective peripheral junction portion |
| US3628107A (en) * | 1969-05-05 | 1971-12-14 | Gen Electric | Passivated semiconductor device with peripheral protective junction |
| US3978514A (en) * | 1969-07-18 | 1976-08-31 | Hitachi, Ltd. | Diode-integrated high speed thyristor |
| US4187515A (en) * | 1974-08-15 | 1980-02-05 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor controlled rectifier |
| US3972014A (en) * | 1974-11-11 | 1976-07-27 | Hutson Jearld L | Four quadrant symmetrical semiconductor switch |
| US4021837A (en) * | 1975-04-21 | 1977-05-03 | Hutson Jearld L | Symmetrical semiconductor switch having carrier lifetime degrading structure |
| JPS52146570A (en) * | 1976-05-31 | 1977-12-06 | Toshiba Corp | Reverse conducting thyristor |
| US4286279A (en) * | 1976-09-20 | 1981-08-25 | Hutson Jearld L | Multilayer semiconductor switching devices |
| JPS63238716A (ja) * | 1986-11-14 | 1988-10-04 | Nec Corp | スイッチ回路 |
| JPH06342902A (ja) * | 1993-06-01 | 1994-12-13 | Komatsu Ltd | 高耐圧半導体装置 |
| US7615801B2 (en) * | 2005-05-18 | 2009-11-10 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
| US20060261346A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3196330A (en) * | 1960-06-10 | 1965-07-20 | Gen Electric | Semiconductor devices and methods of making same |
| US3123750A (en) * | 1961-10-31 | 1964-03-03 | Multiple junction semiconductor device |
-
0
- BE BE639633D patent/BE639633A/xx unknown
-
1962
- 1962-11-07 US US235986A patent/US3280386A/en not_active Expired - Lifetime
-
1963
- 1963-10-28 GB GB42327/63A patent/GB1016095A/en not_active Expired
- 1963-11-07 FR FR953006A patent/FR1375366A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1375366A (fr) | 1964-10-16 |
| US3280386A (en) | 1966-10-18 |
| GB1016095A (en) | 1966-01-05 |