NL299169A
(nl)
*
|
1962-10-30 |
|
|
|
US3341937A
(en)
*
|
1963-02-20 |
1967-09-19 |
Ibm |
Crystalline injection laser device manufacture
|
US3349475A
(en)
*
|
1963-02-21 |
1967-10-31 |
Ibm |
Planar injection laser structure
|
DE1291029B
(de)
*
|
1963-02-21 |
1969-03-20 |
Siemens Ag |
Nach dem Maser- bzw. Laserprinzip arbeitende Anordnung fuer Mikrowellen- bzw. Lichtstrahlung
|
US3354406A
(en)
*
|
1963-04-22 |
1967-11-21 |
Rca Corp |
Element and apparatus for generating coherent radiation
|
US3312910A
(en)
*
|
1963-05-06 |
1967-04-04 |
Franklin F Offner |
Frequency modulation of radiation emitting p-n junctions
|
US3340479A
(en)
*
|
1963-06-14 |
1967-09-05 |
Bell Telephone Labor Inc |
Laser tunable by junction coupling
|
US3363195A
(en)
*
|
1963-07-01 |
1968-01-09 |
Bell Telephone Labor Inc |
Junction diode maser
|
US3330991A
(en)
*
|
1963-07-12 |
1967-07-11 |
Raytheon Co |
Non-thermionic electron emission devices
|
US3309553A
(en)
*
|
1963-08-16 |
1967-03-14 |
Varian Associates |
Solid state radiation emitters
|
US3353114A
(en)
*
|
1963-09-09 |
1967-11-14 |
Boeing Co |
Tunnel-injection light emitting devices
|
US3330957A
(en)
*
|
1963-09-19 |
1967-07-11 |
Russell W Runnels |
Piezoelectric frequency modulated optical maser
|
US3483397A
(en)
*
|
1963-10-16 |
1969-12-09 |
Westinghouse Electric Corp |
Apparatus and method for controlling the output of a light emitting semiconductor device
|
US3412344A
(en)
*
|
1963-10-30 |
1968-11-19 |
Rca Corp |
Semiconductor plasma laser
|
US3305685A
(en)
*
|
1963-11-07 |
1967-02-21 |
Univ California |
Semiconductor laser and method
|
US3349476A
(en)
*
|
1963-11-26 |
1967-10-31 |
Ibm |
Formation of large area contacts to semiconductor devices
|
DE1439316C3
(de)
*
|
1963-12-13 |
1975-07-31 |
Siemens Ag, 1000 Berlin Und 8000 Muenchen |
Anordnung zur Erzeugung und/oder Verstärkung elektromagnetischer Strahlung
|
NL143402B
(nl)
*
|
1964-02-12 |
1974-09-16 |
Philips Nv |
Halfgeleiderinrichting met een een halfgeleiderlichaam bevattende gestuurde injectierecombinatiestralingsbron.
|
US3359508A
(en)
*
|
1964-02-19 |
1967-12-19 |
Gen Electric |
High power junction laser structure
|
US3305412A
(en)
*
|
1964-02-20 |
1967-02-21 |
Hughes Aircraft Co |
Method for preparing a gallium arsenide diode
|
US3300671A
(en)
*
|
1964-03-10 |
1967-01-24 |
Gen Electric |
Surface-adjacent junction electroluminescent device
|
US3482189A
(en)
*
|
1964-03-24 |
1969-12-02 |
Gen Electric |
Frequency control of semiconductive junction lasers by application of force
|
US3327136A
(en)
*
|
1964-03-30 |
1967-06-20 |
Abraham George |
Variable gain tunneling
|
GB1053033A
(nl)
*
|
1964-04-03 |
|
|
|
US3404304A
(en)
*
|
1964-04-30 |
1968-10-01 |
Texas Instruments Inc |
Semiconductor junction device for generating optical radiation
|
US3432221A
(en)
*
|
1964-08-05 |
1969-03-11 |
Ibm |
Stressed laser scanning device using light polarizers
|
US3301716A
(en)
*
|
1964-09-10 |
1967-01-31 |
Rca Corp |
Semiconductor device fabrication
|
DE1295739B
(de)
*
|
1964-11-28 |
1969-05-22 |
Deutsche Bundespost |
Optischer Sender mit einer Halbleiterdiode als stimulierbares Medium (Injektionslaserdiode)
|
US3385970A
(en)
*
|
1964-12-18 |
1968-05-28 |
Bunker Ramo |
Nonreciprocal signal coupling apparatus using optical coupling link in waveguide operating below cutoff
|
US3365630A
(en)
*
|
1965-01-29 |
1968-01-23 |
Bell Telephone Labor Inc |
Electroluminescent gallium phosphide crystal with three dopants
|
US3399313A
(en)
*
|
1965-04-07 |
1968-08-27 |
Sperry Rand Corp |
Photoparametric amplifier diode
|
US3385981A
(en)
*
|
1965-05-03 |
1968-05-28 |
Hughes Aircraft Co |
Double injection two carrier devices and method of operation
|
DE1298216B
(de)
*
|
1965-06-30 |
1969-06-26 |
Siemens Ag |
Laser-Diode
|
US3568087A
(en)
*
|
1965-07-16 |
1971-03-02 |
Massachusetts Inst Technology |
Optically pumped semiconductor laser
|
US3417246A
(en)
*
|
1965-07-26 |
1968-12-17 |
Gen Electric |
Frequency modulated semiconductor junction laser
|
US3427211A
(en)
*
|
1965-07-28 |
1969-02-11 |
Ibm |
Process of making gallium phosphide dendritic crystals with grown in p-n light emitting junctions
|
US3484716A
(en)
*
|
1965-10-01 |
1969-12-16 |
Gen Electric |
High duty cycle laser device
|
US3521073A
(en)
*
|
1965-11-26 |
1970-07-21 |
Gen Dynamics Corp |
Light emitting semiconductor diode using the field emission effect
|
US3387163A
(en)
*
|
1965-12-20 |
1968-06-04 |
Bell Telephone Labor Inc |
Luminescent semiconductor devices including a compensated zone with a substantially balanced concentration of donors and acceptors
|
US3341708A
(en)
*
|
1965-12-27 |
1967-09-12 |
Robert R Bilderback |
Amplitude modulated laser transmitter
|
US3303432A
(en)
*
|
1966-04-18 |
1967-02-07 |
Gen Electric |
High power semiconductor laser devices
|
US3524066A
(en)
*
|
1966-08-22 |
1970-08-11 |
Monsanto Co |
Fluid measurement system having sample chamber with opposed reflecting members for causing multiple reflections
|
US3484854A
(en)
*
|
1966-10-17 |
1969-12-16 |
Westinghouse Electric Corp |
Processing semiconductor materials
|
US3459942A
(en)
*
|
1966-12-05 |
1969-08-05 |
Gen Electric |
High frequency light source
|
GB1176410A
(en)
*
|
1966-12-14 |
1970-01-01 |
Hitachi Ltd |
A Solid State Generator-Detector of Electromagnetic Waves
|
FR1518717A
(fr)
*
|
1966-12-21 |
1968-03-29 |
Radiotechnique Coprim Rtc |
Perfectionnements aux diodes électroluminescentes
|
US3483487A
(en)
*
|
1966-12-29 |
1969-12-09 |
Bell Telephone Labor Inc |
Stress modulation of electromagnetic radiation in semiconductors,with wide range of frequency tuning
|
US3501679A
(en)
*
|
1967-02-27 |
1970-03-17 |
Nippon Electric Co |
P-n junction type light-emitting semiconductor
|
US3546467A
(en)
*
|
1967-04-21 |
1970-12-08 |
Bionic Instr Inc |
Typhlocane with range extending obstacle sensing devices
|
US3479613A
(en)
*
|
1967-04-28 |
1969-11-18 |
Us Navy |
Laser diode and method
|
US3541375A
(en)
*
|
1967-06-07 |
1970-11-17 |
Gen Electric |
Barrier layer electroluminescent devices
|
US3526851A
(en)
*
|
1967-07-10 |
1970-09-01 |
Rca Corp |
Filamentary structure injection laser having a very narrow active junction
|
FR1537810A
(fr)
*
|
1967-07-13 |
1968-08-30 |
Automatisme Cie Gle |
Dispositif optique de lecture de code
|
DE1614846B2
(de)
*
|
1967-07-26 |
1976-09-23 |
Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm |
Halbleiterdiodenanordnung
|
US3585520A
(en)
*
|
1967-09-13 |
1971-06-15 |
Hitachi Ltd |
Device for generating pulsed light by stimulated emission in a semiconductor triggered by the formation and transit of a high field domain
|
JPS4813994B1
(nl)
*
|
1968-03-15 |
1973-05-02 |
|
|
US3597755A
(en)
*
|
1968-05-28 |
1971-08-03 |
Sanders Associates Inc |
Active electro-optical intrusion alarm system having automatic balancing means
|
US3537029A
(en)
*
|
1968-06-10 |
1970-10-27 |
Rca Corp |
Semiconductor laser producing light at two wavelengths simultaneously
|
DE1789061A1
(de)
*
|
1968-09-30 |
1971-12-23 |
Siemens Ag |
Laserdiode
|
US3539945A
(en)
*
|
1969-03-25 |
1970-11-10 |
Us Army |
Methods of modulating injection diodes for maximum optical power
|
US3605037A
(en)
*
|
1969-05-02 |
1971-09-14 |
Bell Telephone Labor Inc |
Curved junction laser devices
|
US3579130A
(en)
*
|
1969-07-18 |
1971-05-18 |
Vern N Smiley |
Thin film active interference filter
|
US3579142A
(en)
*
|
1969-07-18 |
1971-05-18 |
Us Navy |
Thin film laser
|
US3573654A
(en)
*
|
1969-07-18 |
1971-04-06 |
Us Navy |
Narrow band tunable laser oscillator amplifier
|
AT300307B
(de)
*
|
1970-02-26 |
1972-07-25 |
Pass & Sohn Gummiwerk |
Aufrollbarer Stabrost
|
US3660669A
(en)
*
|
1970-04-15 |
1972-05-02 |
Motorola Inc |
Optical coupler made by juxtaposition of lead frame mounted sensor and light emitter
|
US3675150A
(en)
*
|
1970-06-30 |
1972-07-04 |
Ibm |
Internal modulation of injection lasers using acoustic waves
|
US3739301A
(en)
*
|
1971-06-30 |
1973-06-12 |
Us Army |
Single diode single sideband modulator
|
US3747016A
(en)
*
|
1971-08-26 |
1973-07-17 |
Rca Corp |
Semiconductor injection laser
|
US3736410A
(en)
*
|
1971-12-06 |
1973-05-29 |
American Regitel Corp |
Hand held apparatus for sensing data bits carried on a sheet
|
US3901738A
(en)
*
|
1973-12-20 |
1975-08-26 |
Hughes Aircraft Co |
Ion implanted junction laser and process for making same
|
US3936322A
(en)
*
|
1974-07-29 |
1976-02-03 |
International Business Machines Corporation |
Method of making a double heterojunction diode laser
|
US4393393A
(en)
*
|
1979-08-13 |
1983-07-12 |
Mcdonnell Douglas Corporation |
Laser diode with double sided heat sink
|
DE3728566A1
(de)
*
|
1987-08-27 |
1989-03-09 |
Telefunken Electronic Gmbh |
Optoelektronisches halbleiterbauelement
|
WO2022200183A1
(en)
|
2021-03-24 |
2022-09-29 |
Element Six Technologies Limited |
Laser diode assembly and a method of assembling such a laser diode assembly
|