BE636317A - - Google Patents

Info

Publication number
BE636317A
BE636317A BE636317DA BE636317A BE 636317 A BE636317 A BE 636317A BE 636317D A BE636317D A BE 636317DA BE 636317 A BE636317 A BE 636317A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE636317A publication Critical patent/BE636317A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/60—
    • H10P32/141—
    • H10P32/15—
    • H10P32/171—
    • H10P95/00—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness
BE636317D 1962-08-23 BE636317A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US218904A US3226611A (en) 1962-08-23 1962-08-23 Semiconductor device
US265649A US3226613A (en) 1962-08-23 1963-03-18 High voltage semiconductor device
US265736A US3226612A (en) 1962-08-23 1963-03-18 Semiconductor device and method
US321070A US3226614A (en) 1962-08-23 1963-11-04 High voltage semiconductor device
US465012A US3309245A (en) 1962-08-23 1965-06-18 Method for making a semiconductor device
US504813A US3309246A (en) 1962-08-23 1965-10-24 Method for making a high voltage semiconductor device

Publications (1)

Publication Number Publication Date
BE636317A true BE636317A (cg-RX-API-DMAC10.html) 1900-01-01

Family

ID=27559106

Family Applications (2)

Application Number Title Priority Date Filing Date
BE636317D BE636317A (cg-RX-API-DMAC10.html) 1962-08-23
BE636316D BE636316A (cg-RX-API-DMAC10.html) 1962-08-23

Family Applications After (1)

Application Number Title Priority Date Filing Date
BE636316D BE636316A (cg-RX-API-DMAC10.html) 1962-08-23

Country Status (9)

Country Link
US (6) US3226611A (cg-RX-API-DMAC10.html)
BE (2) BE636316A (cg-RX-API-DMAC10.html)
CH (1) CH439498A (cg-RX-API-DMAC10.html)
DE (3) DE1295094B (cg-RX-API-DMAC10.html)
DK (2) DK126811B (cg-RX-API-DMAC10.html)
GB (2) GB1060303A (cg-RX-API-DMAC10.html)
NL (3) NL146646B (cg-RX-API-DMAC10.html)
NO (2) NO115810B (cg-RX-API-DMAC10.html)
SE (2) SE315660B (cg-RX-API-DMAC10.html)

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US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
BE636317A (cg-RX-API-DMAC10.html) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
CH439498A (fr) 1967-07-15
BE636316A (cg-RX-API-DMAC10.html) 1900-01-01
GB1059739A (en) 1967-02-22
DK128388B (da) 1974-04-22
DE1295093B (de) 1969-05-14
US3309246A (en) 1967-03-14
GB1060303A (en) 1967-03-01
DK126811B (da) 1973-08-20
US3226614A (en) 1965-12-28
NO115810B (cg-RX-API-DMAC10.html) 1968-12-09
NO119489B (cg-RX-API-DMAC10.html) 1970-05-25
SE338619B (cg-RX-API-DMAC10.html) 1971-09-13
DE1295094B (de) 1969-05-14
NL146646B (nl) 1975-07-15
US3226612A (en) 1965-12-28
US3226613A (en) 1965-12-28
DE6609659U (de) 1972-08-24
NL302804A (cg-RX-API-DMAC10.html) 1900-01-01
US3226611A (en) 1965-12-28
SE315660B (cg-RX-API-DMAC10.html) 1969-10-06
US3309245A (en) 1967-03-14
NL297002A (cg-RX-API-DMAC10.html) 1900-01-01

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