BE636316A - - Google Patents

Info

Publication number
BE636316A
BE636316A BE636316DA BE636316A BE 636316 A BE636316 A BE 636316A BE 636316D A BE636316D A BE 636316DA BE 636316 A BE636316 A BE 636316A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE636316A publication Critical patent/BE636316A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/2205—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities from the substrate during epitaxy, e.g. autodoping; Preventing or using autodoping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2255—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer comprising oxides only, e.g. P2O5, PSG, H3BO3, doped oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/062—Gold diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/92—Controlling diffusion profile by oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/965—Shaped junction formation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/981—Utilizing varying dielectric thickness

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Thyristors (AREA)
  • Gripping On Spindles (AREA)
  • Bipolar Integrated Circuits (AREA)
BE636316D 1962-08-23 BE636316A (es)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US218904A US3226611A (en) 1962-08-23 1962-08-23 Semiconductor device
US265649A US3226613A (en) 1962-08-23 1963-03-18 High voltage semiconductor device
US265736A US3226612A (en) 1962-08-23 1963-03-18 Semiconductor device and method
US321070A US3226614A (en) 1962-08-23 1963-11-04 High voltage semiconductor device
US465012A US3309245A (en) 1962-08-23 1965-06-18 Method for making a semiconductor device
US504813A US3309246A (en) 1962-08-23 1965-10-24 Method for making a high voltage semiconductor device

Publications (1)

Publication Number Publication Date
BE636316A true BE636316A (es) 1900-01-01

Family

ID=27559106

Family Applications (2)

Application Number Title Priority Date Filing Date
BE636317D BE636317A (es) 1962-08-23
BE636316D BE636316A (es) 1962-08-23

Family Applications Before (1)

Application Number Title Priority Date Filing Date
BE636317D BE636317A (es) 1962-08-23

Country Status (9)

Country Link
US (6) US3226611A (es)
BE (2) BE636316A (es)
CH (1) CH439498A (es)
DE (3) DE1295094B (es)
DK (2) DK128388B (es)
GB (2) GB1060303A (es)
NL (3) NL146646B (es)
NO (2) NO119489B (es)
SE (2) SE315660B (es)

Families Citing this family (112)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1012519A (en) * 1962-08-14 1965-12-08 Texas Instruments Inc Field-effect transistors
NL297002A (es) * 1962-08-23 1900-01-01
BE637064A (es) * 1962-09-07 Rca Corp
BE639315A (es) * 1962-10-31
US3199756A (en) * 1963-04-09 1965-08-10 Coroga Company Package chain assembly and conveying means
US3319311A (en) * 1963-05-24 1967-05-16 Ibm Semiconductor devices and their fabrication
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
NL135876C (es) * 1963-06-11
US3304594A (en) * 1963-08-15 1967-02-21 Motorola Inc Method of making integrated circuit by controlled process
US3366850A (en) * 1963-09-10 1968-01-30 Solid State Radiations Inc P-n junction device with interstitial impurity means to increase the reverse breakdown voltage
DE1228343B (de) * 1963-10-22 1966-11-10 Siemens Ag Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie
NL136562C (es) * 1963-10-24
US3313012A (en) * 1963-11-13 1967-04-11 Texas Instruments Inc Method for making a pnpn device by diffusing
DE1250790B (de) * 1963-12-13 1967-09-28 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper
GB1094068A (en) * 1963-12-26 1967-12-06 Rca Corp Semiconductive devices and methods of producing them
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking
US3860948A (en) * 1964-02-13 1975-01-14 Hitachi Ltd Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby
US3339274A (en) * 1964-03-16 1967-09-05 Hughes Aircraft Co Top contact for surface protected semiconductor devices
US3341755A (en) * 1964-03-20 1967-09-12 Westinghouse Electric Corp Switching transistor structure and method of making the same
US3404304A (en) * 1964-04-30 1968-10-01 Texas Instruments Inc Semiconductor junction device for generating optical radiation
DE1210955B (de) * 1964-06-09 1966-02-17 Ibm Deutschland Verfahren zum Maskieren von Kristallen und zum Herstellen von Halbleiterbauelementen
US3343049A (en) * 1964-06-18 1967-09-19 Ibm Semiconductor devices and passivation thereof
US3401448A (en) * 1964-06-22 1968-09-17 Globe Union Inc Process for making photosensitive semiconductor devices
USB381501I5 (es) * 1964-07-09
US3341749A (en) * 1964-08-10 1967-09-12 Ass Elect Ind Four layer semiconductor devices with improved high voltage characteristics
CA956038A (en) * 1964-08-20 1974-10-08 Roy W. Stiegler (Jr.) Semiconductor devices with field electrodes
GB1095412A (es) * 1964-08-26
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
DE1496870A1 (de) * 1964-10-01 1970-01-08 Hitachi Ltd Verfahren zur Herstellung einer Halbleiteranordnung
US3345216A (en) * 1964-10-07 1967-10-03 Motorola Inc Method of controlling channel formation
US3341377A (en) * 1964-10-16 1967-09-12 Fairchild Camera Instr Co Surface-passivated alloy semiconductor devices and method for producing the same
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
DE1439739B2 (de) * 1964-11-06 1973-11-08 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Verfahren zum Herstellen einer Halbleiteranordnung
US3312577A (en) * 1964-11-24 1967-04-04 Int Standard Electric Corp Process for passivating planar semiconductor devices
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
US3435302A (en) * 1964-11-26 1969-03-25 Sumitomo Electric Industries Constant current semiconductor device
DE1439478A1 (de) * 1964-12-01 1968-10-31 Siemens Ag Flaechentransistor zum Betrieb in Regelschaltungen
USB421061I5 (es) * 1964-12-24
US3341380A (en) * 1964-12-28 1967-09-12 Gen Electric Method of producing semiconductor devices
BE674294A (es) * 1964-12-28
US3338758A (en) * 1964-12-31 1967-08-29 Fairchild Camera Instr Co Surface gradient protected high breakdown junctions
US3484662A (en) * 1965-01-15 1969-12-16 North American Rockwell Thin film transistor on an insulating substrate
US3491434A (en) * 1965-01-28 1970-01-27 Texas Instruments Inc Junction isolation diffusion
GB1028485A (en) * 1965-02-01 1966-05-04 Standard Telephones Cables Ltd Semiconductor devices
US3268782A (en) * 1965-02-02 1966-08-23 Int Rectifier Corp High rate of rise of current-fourlayer device
US3383568A (en) * 1965-02-04 1968-05-14 Texas Instruments Inc Semiconductor device utilizing glass and oxides as an insulator for hermetically sealing the junctions
US3354006A (en) * 1965-03-01 1967-11-21 Texas Instruments Inc Method of forming a diode by using a mask and diffusion
GB1061506A (en) * 1965-03-31 1967-03-15 Ibm Method of forming a semiconductor device and device so made
US3325707A (en) * 1965-04-26 1967-06-13 Rca Corp Transistor with low collector capacitance and method of making same
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
US3394037A (en) * 1965-05-28 1968-07-23 Motorola Inc Method of making a semiconductor device by masking and diffusion
US3411199A (en) * 1965-05-28 1968-11-19 Rca Corp Semiconductor device fabrication
US3365629A (en) * 1965-06-24 1968-01-23 Sprague Electric Co Chopper amplifier having high breakdown voltage
US3434893A (en) * 1965-06-28 1969-03-25 Honeywell Inc Semiconductor device with a lateral retrograded pn junction
US3402081A (en) * 1965-06-30 1968-09-17 Ibm Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby
FR1450654A (fr) * 1965-07-01 1966-06-24 Radiotechnique Perfectionnements aux dispositifs semi-conducteurs de détection de radiations ionisantes
US3397449A (en) * 1965-07-14 1968-08-20 Hughes Aircraft Co Making p-nu junction under glass
US3440496A (en) * 1965-07-20 1969-04-22 Hughes Aircraft Co Surface-protected semiconductor devices and methods of manufacturing
US3391287A (en) * 1965-07-30 1968-07-02 Westinghouse Electric Corp Guard junctions for p-nu junction semiconductor devices
US3473093A (en) * 1965-08-18 1969-10-14 Ibm Semiconductor device having compensated barrier zones between n-p junctions
US3418181A (en) * 1965-10-20 1968-12-24 Motorola Inc Method of forming a semiconductor by masking and diffusing
US3426422A (en) * 1965-10-23 1969-02-11 Fairchild Camera Instr Co Method of making stable semiconductor devices
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
US3503813A (en) * 1965-12-15 1970-03-31 Hitachi Ltd Method of making a semiconductor device
US3508125A (en) * 1966-01-06 1970-04-21 Texas Instruments Inc Microwave mixer diode comprising a schottky barrier junction
USB534135I5 (es) * 1966-03-14
US3490964A (en) * 1966-04-29 1970-01-20 Texas Instruments Inc Process of forming semiconductor devices by masking and diffusion
US3457125A (en) * 1966-06-21 1969-07-22 Union Carbide Corp Passivation of semiconductor devices
US3476619A (en) * 1966-09-13 1969-11-04 Motorola Inc Semiconductor device stabilization
US3506890A (en) * 1966-10-31 1970-04-14 Hitachi Ltd Field effect semiconductor device having channel stopping means
US3497407A (en) * 1966-12-28 1970-02-24 Ibm Etching of semiconductor coatings of sio2
GB1140822A (en) * 1967-01-26 1969-01-22 Westinghouse Brake & Signal Semi-conductor elements
US3632433A (en) * 1967-03-29 1972-01-04 Hitachi Ltd Method for producing a semiconductor device
US3510735A (en) * 1967-04-13 1970-05-05 Scient Data Systems Inc Transistor with integral pinch resistor
DE1644003A1 (de) * 1967-04-20 1970-09-24 Siemens Ag Verfahren zum Dotieren von Halbleiterkristallen
US3532945A (en) * 1967-08-30 1970-10-06 Fairchild Camera Instr Co Semiconductor devices having a low capacitance junction
US3510728A (en) * 1967-09-08 1970-05-05 Motorola Inc Isolation of multiple layer metal circuits with low temperature phosphorus silicates
US3959810A (en) * 1967-10-02 1976-05-25 Hitachi, Ltd. Method for manufacturing a semiconductor device and the same
US3515956A (en) * 1967-10-16 1970-06-02 Ion Physics Corp High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions
US3518750A (en) * 1968-10-02 1970-07-07 Nat Semiconductor Corp Method of manufacturing a misfet
US3923562A (en) * 1968-10-07 1975-12-02 Ibm Process for producing monolithic circuits
US3617398A (en) * 1968-10-22 1971-11-02 Ibm A process for fabricating semiconductor devices having compensated barrier zones between np-junctions
US3519897A (en) * 1968-10-31 1970-07-07 Nat Semiconductor Corp Semiconductor surface inversion protection
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
NL165005C (nl) * 1969-06-26 1981-02-16 Philips Nv Halfgeleiderinrichting bevattende veldeffecttransistors met geisoleerde stuurelektrode en werkwijze voor het vervaardigen van de halfgeleiderinrichting.
US3582725A (en) * 1969-08-21 1971-06-01 Nippon Electric Co Semiconductor integrated circuit device and the method of manufacturing the same
US3657612A (en) * 1970-04-20 1972-04-18 Ibm Inverse transistor with high current gain
FR2108781B1 (es) * 1970-10-05 1974-10-31 Radiotechnique Compelec
US3719535A (en) * 1970-12-21 1973-03-06 Motorola Inc Hyperfine geometry devices and method for their fabrication
US3776786A (en) * 1971-03-18 1973-12-04 Motorola Inc Method of producing high speed transistors and resistors simultaneously
US3842490A (en) * 1971-04-21 1974-10-22 Signetics Corp Semiconductor structure with sloped side walls and method
US3772575A (en) * 1971-04-28 1973-11-13 Rca Corp High heat dissipation solder-reflow flip chip transistor
US3677280A (en) * 1971-06-21 1972-07-18 Fairchild Camera Instr Co Optimum high gain-bandwidth phototransistor structure
DE2241600A1 (de) * 1971-08-26 1973-03-01 Dionics Inc Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung
JPS4974486A (es) * 1972-11-17 1974-07-18
NL161301C (nl) * 1972-12-29 1980-01-15 Philips Nv Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan.
US3895392A (en) * 1973-04-05 1975-07-15 Signetics Corp Bipolar transistor structure having ion implanted region and method
CA1025034A (en) * 1973-06-01 1978-01-24 Herman Statz Semiconductor devices with isolation between adjacent regions and method of manufacture
US3986752A (en) * 1974-04-11 1976-10-19 E. I. Du Pont De Nemours And Company Resilient center bearing assembly
GB1499845A (en) * 1975-03-26 1978-02-01 Mullard Ltd Thyristors
JPS5211872A (en) * 1975-07-18 1977-01-29 Toshiba Corp Semiconductor device
US4124863A (en) * 1977-04-12 1978-11-07 Harris Corporation Positively biased substrate IC with thermal oxide guard ring
US4105476A (en) * 1977-05-02 1978-08-08 Solitron Devices, Inc. Method of manufacturing semiconductors
US4225874A (en) * 1978-03-09 1980-09-30 Rca Corporation Semiconductor device having integrated diode
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
JPS5627935A (en) * 1979-08-15 1981-03-18 Toshiba Corp Semiconductor device
US4412242A (en) * 1980-11-17 1983-10-25 International Rectifier Corporation Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions
US4757363A (en) * 1984-09-14 1988-07-12 Harris Corporation ESD protection network for IGFET circuits with SCR prevention guard rings
US8324713B2 (en) * 2005-10-31 2012-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Profile design for lateral-vertical bipolar junction transistor
TW201330282A (zh) * 2012-01-09 2013-07-16 Lextar Electronics Corp 齊納二極體結構及其製造方法
US10211326B2 (en) * 2016-03-31 2019-02-19 Stmicroelectronics (Tours) Sas Vertical power component
FR3049770B1 (fr) * 2016-03-31 2018-07-27 Stmicroelectronics (Tours) Sas Composant de puissance vertical

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA667423A (en) * 1963-07-23 Northern Electric Company Limited Semiconductor device and method of manufacture
US2462218A (en) * 1945-04-17 1949-02-22 Bell Telephone Labor Inc Electrical translator and method of making it
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
US2703296A (en) * 1950-06-20 1955-03-01 Bell Telephone Labor Inc Method of producing a semiconductor element
US2748325A (en) * 1953-04-16 1956-05-29 Rca Corp Semi-conductor devices and methods for treating same
US2816847A (en) * 1953-11-18 1957-12-17 Bell Telephone Labor Inc Method of fabricating semiconductor signal translating devices
BE534505A (es) * 1953-12-30
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
NL97896C (es) * 1955-02-18
NL121810C (es) * 1955-11-04
US3091701A (en) * 1956-03-26 1963-05-28 Raytheon Co High frequency response transistors
US2819990A (en) * 1956-04-26 1958-01-14 Bell Telephone Labor Inc Treatment of semiconductive bodies
US3024160A (en) * 1956-08-31 1962-03-06 Process Methods Corp Paper, particularly printing paper, and method of making same
US2954307A (en) * 1957-03-18 1960-09-27 Shockley William Grain boundary semiconductor device and method
US3007090A (en) * 1957-09-04 1961-10-31 Ibm Back resistance control for junction semiconductor devices
DE1243278B (de) * 1958-03-27 1967-06-29 Siemens Ag npn- bzw. pnp-Leistungstransistor aus Silizium
US2899344A (en) * 1958-04-30 1959-08-11 Rinse in
NL230316A (es) * 1958-08-07
AT214485B (de) * 1958-09-30 1961-04-10 Siemens Ag Verfahren zur Herstellung von pn-Übergängen in einem Grundkörper aus vorwiegend einkristallinem Halbleitermaterial
US3099591A (en) * 1958-12-15 1963-07-30 Shockley William Semiconductive device
US2997604A (en) * 1959-01-14 1961-08-22 Shockley William Semiconductive device and method of operating same
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
US3097308A (en) * 1959-03-09 1963-07-09 Rca Corp Semiconductor device with surface electrode producing electrostatic field and circuits therefor
DE1105069B (de) * 1959-04-25 1961-04-20 Siemens Ag AEtzverfahren eines pn-UEberganges bei der Herstellung einer Halbleiteranordnung
US3140438A (en) * 1959-05-08 1964-07-07 Clevite Corp Voltage regulating semiconductor device
NL251527A (es) * 1959-05-12
US2953486A (en) * 1959-06-01 1960-09-20 Bell Telephone Labor Inc Junction formation by thermal oxidation of semiconductive material
FR1279484A (fr) * 1959-11-13 1961-12-22 Siemens Ag Dispositif semi-conducteur à monocristal
DE1414438B2 (es) * 1959-11-13 1970-04-23
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions
US3085033A (en) * 1960-03-08 1963-04-09 Bell Telephone Labor Inc Fabrication of semiconductor devices
NL265382A (es) * 1960-03-08
NL258408A (es) * 1960-06-10
US3158788A (en) * 1960-08-15 1964-11-24 Fairchild Camera Instr Co Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material
NL267831A (es) * 1960-08-17
US3117229A (en) * 1960-10-03 1964-01-07 Solid State Radiations Inc Solid state radiation detector with separate ohmic contacts to reduce leakage current
US3183129A (en) * 1960-10-14 1965-05-11 Fairchild Camera Instr Co Method of forming a semiconductor
NL270369A (es) * 1961-01-16
FR1288168A (fr) * 1961-02-08 1962-03-24 Perfectionnements aux transistors à charges d'espace mitoyennes
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
FR1337348A (fr) * 1961-09-08 1963-09-13 Pacific Semiconductors Transistors de couplage
US3197681A (en) * 1961-09-29 1965-07-27 Texas Instruments Inc Semiconductor devices with heavily doped region to prevent surface inversion
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
NL297002A (es) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
SE338619B (es) 1971-09-13
US3226612A (en) 1965-12-28
GB1060303A (en) 1967-03-01
NL297002A (es) 1900-01-01
US3226614A (en) 1965-12-28
NO119489B (es) 1970-05-25
DK128388B (da) 1974-04-22
DE1295094B (de) 1969-05-14
US3226613A (en) 1965-12-28
DE1295093B (de) 1969-05-14
US3226611A (en) 1965-12-28
NO115810B (es) 1968-12-09
NL146646B (nl) 1975-07-15
SE315660B (es) 1969-10-06
CH439498A (fr) 1967-07-15
GB1059739A (en) 1967-02-22
NL302804A (es) 1900-01-01
DE6609659U (de) 1972-08-24
BE636317A (es) 1900-01-01
US3309245A (en) 1967-03-14
US3309246A (en) 1967-03-14
DK126811B (da) 1973-08-20

Similar Documents

Publication Publication Date Title
AT10823B (es)
AT12729B (es)
AT11620B (es)
AT13658B (es)
AT10960B (es)
DE1249613B (es)
AT11567B (es)
AT11599B (es)
AT16150B (es)
AT14238B (es)
AT12671B (es)
AT12678B (es)
AT2542B (es)
AT2493B (es)
AT13956B (es)
AT10871B (es)
AT10912B (es)
AT2489B (es)
AT2339B (es)
AT11398B (es)
AT11462B (es)
AT11477B (es)
AT11502B (es)
AT11552B (es)
AT2477B (es)