BE636316A - - Google Patents
Info
- Publication number
- BE636316A BE636316A BE636316DA BE636316A BE 636316 A BE636316 A BE 636316A BE 636316D A BE636316D A BE 636316DA BE 636316 A BE636316 A BE 636316A
- Authority
- BE
- Belgium
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P14/60—
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- H10P32/141—
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- H10P32/15—
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- H10P32/171—
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- H10P95/00—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/062—Gold diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/981—Utilizing varying dielectric thickness
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US218904A US3226611A (en) | 1962-08-23 | 1962-08-23 | Semiconductor device |
| US265649A US3226613A (en) | 1962-08-23 | 1963-03-18 | High voltage semiconductor device |
| US265736A US3226612A (en) | 1962-08-23 | 1963-03-18 | Semiconductor device and method |
| US321070A US3226614A (en) | 1962-08-23 | 1963-11-04 | High voltage semiconductor device |
| US465012A US3309245A (en) | 1962-08-23 | 1965-06-18 | Method for making a semiconductor device |
| US504813A US3309246A (en) | 1962-08-23 | 1965-10-24 | Method for making a high voltage semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE636316A true BE636316A (enExample) | 1900-01-01 |
Family
ID=27559106
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE636317D BE636317A (enExample) | 1962-08-23 | ||
| BE636316D BE636316A (enExample) | 1962-08-23 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE636317D BE636317A (enExample) | 1962-08-23 |
Country Status (9)
| Country | Link |
|---|---|
| US (6) | US3226611A (enExample) |
| BE (2) | BE636316A (enExample) |
| CH (1) | CH439498A (enExample) |
| DE (3) | DE1295094B (enExample) |
| DK (2) | DK126811B (enExample) |
| GB (2) | GB1060303A (enExample) |
| NL (3) | NL146646B (enExample) |
| NO (2) | NO115810B (enExample) |
| SE (2) | SE315660B (enExample) |
Families Citing this family (112)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1012519A (en) * | 1962-08-14 | 1965-12-08 | Texas Instruments Inc | Field-effect transistors |
| BE636317A (enExample) * | 1962-08-23 | 1900-01-01 | ||
| NL297601A (enExample) * | 1962-09-07 | Rca Corp | ||
| BE639315A (enExample) * | 1962-10-31 | |||
| US3199756A (en) * | 1963-04-09 | 1965-08-10 | Coroga Company | Package chain assembly and conveying means |
| US3319311A (en) * | 1963-05-24 | 1967-05-16 | Ibm | Semiconductor devices and their fabrication |
| US3472703A (en) * | 1963-06-06 | 1969-10-14 | Hitachi Ltd | Method for producing semiconductor devices |
| NL135876C (enExample) * | 1963-06-11 | |||
| US3304594A (en) * | 1963-08-15 | 1967-02-21 | Motorola Inc | Method of making integrated circuit by controlled process |
| US3366850A (en) * | 1963-09-10 | 1968-01-30 | Solid State Radiations Inc | P-n junction device with interstitial impurity means to increase the reverse breakdown voltage |
| DE1228343B (de) * | 1963-10-22 | 1966-11-10 | Siemens Ag | Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie |
| NL136562C (enExample) * | 1963-10-24 | |||
| US3313012A (en) * | 1963-11-13 | 1967-04-11 | Texas Instruments Inc | Method for making a pnpn device by diffusing |
| DE1250790B (de) * | 1963-12-13 | 1967-09-28 | N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) | Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper |
| GB1094068A (en) * | 1963-12-26 | 1967-12-06 | Rca Corp | Semiconductive devices and methods of producing them |
| US3342650A (en) * | 1964-02-10 | 1967-09-19 | Hitachi Ltd | Method of making semiconductor devices by double masking |
| US3860948A (en) * | 1964-02-13 | 1975-01-14 | Hitachi Ltd | Method for manufacturing semiconductor devices having oxide films and the semiconductor devices manufactured thereby |
| US3323956A (en) * | 1964-03-16 | 1967-06-06 | Hughes Aircraft Co | Method of manufacturing semiconductor devices |
| US3341755A (en) * | 1964-03-20 | 1967-09-12 | Westinghouse Electric Corp | Switching transistor structure and method of making the same |
| US3404304A (en) * | 1964-04-30 | 1968-10-01 | Texas Instruments Inc | Semiconductor junction device for generating optical radiation |
| DE1210955B (de) * | 1964-06-09 | 1966-02-17 | Ibm Deutschland | Verfahren zum Maskieren von Kristallen und zum Herstellen von Halbleiterbauelementen |
| US3343049A (en) * | 1964-06-18 | 1967-09-19 | Ibm | Semiconductor devices and passivation thereof |
| US3401448A (en) * | 1964-06-22 | 1968-09-17 | Globe Union Inc | Process for making photosensitive semiconductor devices |
| USB381501I5 (enExample) * | 1964-07-09 | |||
| US3341749A (en) * | 1964-08-10 | 1967-09-12 | Ass Elect Ind | Four layer semiconductor devices with improved high voltage characteristics |
| CA956038A (en) * | 1964-08-20 | 1974-10-08 | Roy W. Stiegler (Jr.) | Semiconductor devices with field electrodes |
| GB1095412A (enExample) * | 1964-08-26 | |||
| US3379584A (en) * | 1964-09-04 | 1968-04-23 | Texas Instruments Inc | Semiconductor wafer with at least one epitaxial layer and methods of making same |
| DE1496870A1 (de) * | 1964-10-01 | 1970-01-08 | Hitachi Ltd | Verfahren zur Herstellung einer Halbleiteranordnung |
| US3345216A (en) * | 1964-10-07 | 1967-10-03 | Motorola Inc | Method of controlling channel formation |
| US3341377A (en) * | 1964-10-16 | 1967-09-12 | Fairchild Camera Instr Co | Surface-passivated alloy semiconductor devices and method for producing the same |
| US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
| DE1439739B2 (de) * | 1964-11-06 | 1973-11-08 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zum Herstellen einer Halbleiteranordnung |
| US3312577A (en) * | 1964-11-24 | 1967-04-04 | Int Standard Electric Corp | Process for passivating planar semiconductor devices |
| US3305708A (en) * | 1964-11-25 | 1967-02-21 | Rca Corp | Insulated-gate field-effect semiconductor device |
| US3435302A (en) * | 1964-11-26 | 1969-03-25 | Sumitomo Electric Industries | Constant current semiconductor device |
| DE1439478A1 (de) * | 1964-12-01 | 1968-10-31 | Siemens Ag | Flaechentransistor zum Betrieb in Regelschaltungen |
| USB421061I5 (enExample) * | 1964-12-24 | |||
| BE674294A (enExample) * | 1964-12-28 | |||
| US3341380A (en) * | 1964-12-28 | 1967-09-12 | Gen Electric | Method of producing semiconductor devices |
| US3338758A (en) * | 1964-12-31 | 1967-08-29 | Fairchild Camera Instr Co | Surface gradient protected high breakdown junctions |
| US3484662A (en) * | 1965-01-15 | 1969-12-16 | North American Rockwell | Thin film transistor on an insulating substrate |
| US3491434A (en) * | 1965-01-28 | 1970-01-27 | Texas Instruments Inc | Junction isolation diffusion |
| GB1028485A (en) * | 1965-02-01 | 1966-05-04 | Standard Telephones Cables Ltd | Semiconductor devices |
| US3268782A (en) * | 1965-02-02 | 1966-08-23 | Int Rectifier Corp | High rate of rise of current-fourlayer device |
| US3383568A (en) * | 1965-02-04 | 1968-05-14 | Texas Instruments Inc | Semiconductor device utilizing glass and oxides as an insulator for hermetically sealing the junctions |
| US3354006A (en) * | 1965-03-01 | 1967-11-21 | Texas Instruments Inc | Method of forming a diode by using a mask and diffusion |
| GB1061506A (en) * | 1965-03-31 | 1967-03-15 | Ibm | Method of forming a semiconductor device and device so made |
| US3325707A (en) * | 1965-04-26 | 1967-06-13 | Rca Corp | Transistor with low collector capacitance and method of making same |
| US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
| US3411199A (en) * | 1965-05-28 | 1968-11-19 | Rca Corp | Semiconductor device fabrication |
| US3394037A (en) * | 1965-05-28 | 1968-07-23 | Motorola Inc | Method of making a semiconductor device by masking and diffusion |
| US3365629A (en) * | 1965-06-24 | 1968-01-23 | Sprague Electric Co | Chopper amplifier having high breakdown voltage |
| US3434893A (en) * | 1965-06-28 | 1969-03-25 | Honeywell Inc | Semiconductor device with a lateral retrograded pn junction |
| US3402081A (en) * | 1965-06-30 | 1968-09-17 | Ibm | Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby |
| FR1450654A (fr) * | 1965-07-01 | 1966-06-24 | Radiotechnique | Perfectionnements aux dispositifs semi-conducteurs de détection de radiations ionisantes |
| US3397449A (en) * | 1965-07-14 | 1968-08-20 | Hughes Aircraft Co | Making p-nu junction under glass |
| US3440496A (en) * | 1965-07-20 | 1969-04-22 | Hughes Aircraft Co | Surface-protected semiconductor devices and methods of manufacturing |
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| US3473093A (en) * | 1965-08-18 | 1969-10-14 | Ibm | Semiconductor device having compensated barrier zones between n-p junctions |
| US3418181A (en) * | 1965-10-20 | 1968-12-24 | Motorola Inc | Method of forming a semiconductor by masking and diffusing |
| US3426422A (en) * | 1965-10-23 | 1969-02-11 | Fairchild Camera Instr Co | Method of making stable semiconductor devices |
| DE1544273A1 (de) * | 1965-12-13 | 1969-09-04 | Siemens Ag | Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall |
| US3503813A (en) * | 1965-12-15 | 1970-03-31 | Hitachi Ltd | Method of making a semiconductor device |
| US3508125A (en) * | 1966-01-06 | 1970-04-21 | Texas Instruments Inc | Microwave mixer diode comprising a schottky barrier junction |
| USB534135I5 (enExample) * | 1966-03-14 | |||
| US3490964A (en) * | 1966-04-29 | 1970-01-20 | Texas Instruments Inc | Process of forming semiconductor devices by masking and diffusion |
| US3457125A (en) * | 1966-06-21 | 1969-07-22 | Union Carbide Corp | Passivation of semiconductor devices |
| US3476619A (en) * | 1966-09-13 | 1969-11-04 | Motorola Inc | Semiconductor device stabilization |
| US3506890A (en) * | 1966-10-31 | 1970-04-14 | Hitachi Ltd | Field effect semiconductor device having channel stopping means |
| US3497407A (en) * | 1966-12-28 | 1970-02-24 | Ibm | Etching of semiconductor coatings of sio2 |
| GB1140822A (en) * | 1967-01-26 | 1969-01-22 | Westinghouse Brake & Signal | Semi-conductor elements |
| US3632433A (en) * | 1967-03-29 | 1972-01-04 | Hitachi Ltd | Method for producing a semiconductor device |
| US3510735A (en) * | 1967-04-13 | 1970-05-05 | Scient Data Systems Inc | Transistor with integral pinch resistor |
| DE1644003A1 (de) * | 1967-04-20 | 1970-09-24 | Siemens Ag | Verfahren zum Dotieren von Halbleiterkristallen |
| US3532945A (en) * | 1967-08-30 | 1970-10-06 | Fairchild Camera Instr Co | Semiconductor devices having a low capacitance junction |
| US3510728A (en) * | 1967-09-08 | 1970-05-05 | Motorola Inc | Isolation of multiple layer metal circuits with low temperature phosphorus silicates |
| US3959810A (en) * | 1967-10-02 | 1976-05-25 | Hitachi, Ltd. | Method for manufacturing a semiconductor device and the same |
| US3515956A (en) * | 1967-10-16 | 1970-06-02 | Ion Physics Corp | High-voltage semiconductor device having a guard ring containing substitutionally active ions in interstitial positions |
| US3518750A (en) * | 1968-10-02 | 1970-07-07 | Nat Semiconductor Corp | Method of manufacturing a misfet |
| US3923562A (en) * | 1968-10-07 | 1975-12-02 | Ibm | Process for producing monolithic circuits |
| US3617398A (en) * | 1968-10-22 | 1971-11-02 | Ibm | A process for fabricating semiconductor devices having compensated barrier zones between np-junctions |
| US3519897A (en) * | 1968-10-31 | 1970-07-07 | Nat Semiconductor Corp | Semiconductor surface inversion protection |
| NL161923C (nl) * | 1969-04-18 | 1980-03-17 | Philips Nv | Halfgeleiderinrichting. |
| NL165005C (nl) * | 1969-06-26 | 1981-02-16 | Philips Nv | Halfgeleiderinrichting bevattende veldeffecttransistors met geisoleerde stuurelektrode en werkwijze voor het vervaardigen van de halfgeleiderinrichting. |
| US3582725A (en) * | 1969-08-21 | 1971-06-01 | Nippon Electric Co | Semiconductor integrated circuit device and the method of manufacturing the same |
| US3657612A (en) * | 1970-04-20 | 1972-04-18 | Ibm | Inverse transistor with high current gain |
| FR2108781B1 (enExample) * | 1970-10-05 | 1974-10-31 | Radiotechnique Compelec | |
| US3719535A (en) * | 1970-12-21 | 1973-03-06 | Motorola Inc | Hyperfine geometry devices and method for their fabrication |
| US3776786A (en) * | 1971-03-18 | 1973-12-04 | Motorola Inc | Method of producing high speed transistors and resistors simultaneously |
| US3842490A (en) * | 1971-04-21 | 1974-10-22 | Signetics Corp | Semiconductor structure with sloped side walls and method |
| US3772575A (en) * | 1971-04-28 | 1973-11-13 | Rca Corp | High heat dissipation solder-reflow flip chip transistor |
| US3677280A (en) * | 1971-06-21 | 1972-07-18 | Fairchild Camera Instr Co | Optimum high gain-bandwidth phototransistor structure |
| DE2241600A1 (de) * | 1971-08-26 | 1973-03-01 | Dionics Inc | Hochspannungs-p-n-uebergang und seine anwendung in halbleiterschaltelementen, sowie verfahren zu seiner herstellung |
| JPS4974486A (enExample) * | 1972-11-17 | 1974-07-18 | ||
| NL161301C (nl) * | 1972-12-29 | 1980-01-15 | Philips Nv | Halfgeleiderinrichting en werkwijze voor de vervaar- diging daarvan. |
| US3895392A (en) * | 1973-04-05 | 1975-07-15 | Signetics Corp | Bipolar transistor structure having ion implanted region and method |
| CA1025034A (en) * | 1973-06-01 | 1978-01-24 | Herman Statz | Semiconductor devices with isolation between adjacent regions and method of manufacture |
| US3986752A (en) * | 1974-04-11 | 1976-10-19 | E. I. Du Pont De Nemours And Company | Resilient center bearing assembly |
| GB1499845A (en) * | 1975-03-26 | 1978-02-01 | Mullard Ltd | Thyristors |
| JPS5211872A (en) * | 1975-07-18 | 1977-01-29 | Toshiba Corp | Semiconductor device |
| US4124863A (en) * | 1977-04-12 | 1978-11-07 | Harris Corporation | Positively biased substrate IC with thermal oxide guard ring |
| US4105476A (en) * | 1977-05-02 | 1978-08-08 | Solitron Devices, Inc. | Method of manufacturing semiconductors |
| US4225874A (en) * | 1978-03-09 | 1980-09-30 | Rca Corporation | Semiconductor device having integrated diode |
| JPS55123157A (en) * | 1979-03-16 | 1980-09-22 | Oki Electric Ind Co Ltd | High-stability ion-injected resistor |
| JPS5627935A (en) * | 1979-08-15 | 1981-03-18 | Toshiba Corp | Semiconductor device |
| US4412242A (en) * | 1980-11-17 | 1983-10-25 | International Rectifier Corporation | Planar structure for high voltage semiconductor devices with gaps in glassy layer over high field regions |
| US4757363A (en) * | 1984-09-14 | 1988-07-12 | Harris Corporation | ESD protection network for IGFET circuits with SCR prevention guard rings |
| US8324713B2 (en) * | 2005-10-31 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Profile design for lateral-vertical bipolar junction transistor |
| TW201330282A (zh) * | 2012-01-09 | 2013-07-16 | 隆達電子股份有限公司 | 齊納二極體結構及其製造方法 |
| US10211326B2 (en) * | 2016-03-31 | 2019-02-19 | Stmicroelectronics (Tours) Sas | Vertical power component |
| FR3049770B1 (fr) * | 2016-03-31 | 2018-07-27 | Stmicroelectronics (Tours) Sas | Composant de puissance vertical |
Family Cites Families (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA667423A (en) * | 1963-07-23 | Northern Electric Company Limited | Semiconductor device and method of manufacture | |
| US2462218A (en) * | 1945-04-17 | 1949-02-22 | Bell Telephone Labor Inc | Electrical translator and method of making it |
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| US2703296A (en) * | 1950-06-20 | 1955-03-01 | Bell Telephone Labor Inc | Method of producing a semiconductor element |
| US2748325A (en) * | 1953-04-16 | 1956-05-29 | Rca Corp | Semi-conductor devices and methods for treating same |
| US2816847A (en) * | 1953-11-18 | 1957-12-17 | Bell Telephone Labor Inc | Method of fabricating semiconductor signal translating devices |
| BE534505A (enExample) * | 1953-12-30 | |||
| US2743200A (en) * | 1954-05-27 | 1956-04-24 | Bell Telephone Labor Inc | Method of forming junctions in silicon |
| NL97896C (enExample) * | 1955-02-18 | |||
| NL251064A (enExample) * | 1955-11-04 | |||
| US3091701A (en) * | 1956-03-26 | 1963-05-28 | Raytheon Co | High frequency response transistors |
| US2819990A (en) * | 1956-04-26 | 1958-01-14 | Bell Telephone Labor Inc | Treatment of semiconductive bodies |
| US3024160A (en) * | 1956-08-31 | 1962-03-06 | Process Methods Corp | Paper, particularly printing paper, and method of making same |
| US2954307A (en) * | 1957-03-18 | 1960-09-27 | Shockley William | Grain boundary semiconductor device and method |
| US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
| DE1243278B (de) * | 1958-03-27 | 1967-06-29 | Siemens Ag | npn- bzw. pnp-Leistungstransistor aus Silizium |
| US2899344A (en) * | 1958-04-30 | 1959-08-11 | Rinse in | |
| NL111773C (enExample) * | 1958-08-07 | |||
| AT214485B (de) * | 1958-09-30 | 1961-04-10 | Siemens Ag | Verfahren zur Herstellung von pn-Übergängen in einem Grundkörper aus vorwiegend einkristallinem Halbleitermaterial |
| US3099591A (en) * | 1958-12-15 | 1963-07-30 | Shockley William | Semiconductive device |
| US2997604A (en) * | 1959-01-14 | 1961-08-22 | Shockley William | Semiconductive device and method of operating same |
| US2967793A (en) * | 1959-02-24 | 1961-01-10 | Westinghouse Electric Corp | Semiconductor devices with bi-polar injection characteristics |
| US3097308A (en) * | 1959-03-09 | 1963-07-09 | Rca Corp | Semiconductor device with surface electrode producing electrostatic field and circuits therefor |
| DE1105069B (de) * | 1959-04-25 | 1961-04-20 | Siemens Ag | AEtzverfahren eines pn-UEberganges bei der Herstellung einer Halbleiteranordnung |
| US3140438A (en) * | 1959-05-08 | 1964-07-07 | Clevite Corp | Voltage regulating semiconductor device |
| NL251527A (enExample) * | 1959-05-12 | |||
| US2953486A (en) * | 1959-06-01 | 1960-09-20 | Bell Telephone Labor Inc | Junction formation by thermal oxidation of semiconductive material |
| DE1414438B2 (enExample) * | 1959-11-13 | 1970-04-23 | ||
| FR1279484A (fr) * | 1959-11-13 | 1961-12-22 | Siemens Ag | Dispositif semi-conducteur à monocristal |
| US3114864A (en) * | 1960-02-08 | 1963-12-17 | Fairchild Camera Instr Co | Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions |
| US3085033A (en) * | 1960-03-08 | 1963-04-09 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
| NL265382A (enExample) * | 1960-03-08 | |||
| DE1133038B (de) | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
| NL127213C (enExample) * | 1960-06-10 | |||
| US3158788A (en) * | 1960-08-15 | 1964-11-24 | Fairchild Camera Instr Co | Solid-state circuitry having discrete regions of semi-conductor material isolated by an insulating material |
| NL267831A (enExample) * | 1960-08-17 | |||
| US3117229A (en) * | 1960-10-03 | 1964-01-07 | Solid State Radiations Inc | Solid state radiation detector with separate ohmic contacts to reduce leakage current |
| US3183129A (en) * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor |
| NL125803C (enExample) * | 1961-01-16 | |||
| FR1288168A (fr) * | 1961-02-08 | 1962-03-24 | Perfectionnements aux transistors à charges d'espace mitoyennes | |
| DE1138481C2 (de) * | 1961-06-09 | 1963-05-22 | Siemens Ag | Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase |
| FR1337348A (fr) * | 1961-09-08 | 1963-09-13 | Pacific Semiconductors | Transistors de couplage |
| US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
| US3183128A (en) * | 1962-06-11 | 1965-05-11 | Fairchild Camera Instr Co | Method of making field-effect transistors |
| BE636317A (enExample) * | 1962-08-23 | 1900-01-01 |
-
0
- BE BE636317D patent/BE636317A/xx unknown
- NL NL297002D patent/NL297002A/xx unknown
- BE BE636316D patent/BE636316A/xx unknown
- NL NL302804D patent/NL302804A/xx unknown
-
1962
- 1962-08-23 US US218904A patent/US3226611A/en not_active Expired - Lifetime
-
1963
- 1963-03-18 US US265649A patent/US3226613A/en not_active Expired - Lifetime
- 1963-03-18 US US265736A patent/US3226612A/en not_active Expired - Lifetime
- 1963-08-06 GB GB31031/63A patent/GB1060303A/en not_active Expired
- 1963-08-06 GB GB31030/63A patent/GB1059739A/en not_active Expired
- 1963-08-08 NO NO149672A patent/NO115810B/no unknown
- 1963-08-08 NO NO149673A patent/NO119489B/no unknown
- 1963-08-19 SE SE9043/63A patent/SE315660B/xx unknown
- 1963-08-21 DK DK399263AA patent/DK126811B/da unknown
- 1963-08-21 DK DK399163AA patent/DK128388B/da unknown
- 1963-08-22 NL NL63297002A patent/NL146646B/xx not_active IP Right Cessation
- 1963-08-23 DE DEM57928A patent/DE1295094B/de active Pending
- 1963-09-03 SE SE09596/63A patent/SE338619B/xx unknown
- 1963-09-27 DE DEM58355A patent/DE1295093B/de active Pending
- 1963-09-27 DE DE6609659U patent/DE6609659U/de not_active Expired
- 1963-11-04 US US321070A patent/US3226614A/en not_active Expired - Lifetime
-
1964
- 1964-11-03 CH CH1422564A patent/CH439498A/fr unknown
-
1965
- 1965-06-18 US US465012A patent/US3309245A/en not_active Expired - Lifetime
- 1965-10-24 US US504813A patent/US3309246A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CH439498A (fr) | 1967-07-15 |
| GB1059739A (en) | 1967-02-22 |
| DK128388B (da) | 1974-04-22 |
| DE1295093B (de) | 1969-05-14 |
| US3309246A (en) | 1967-03-14 |
| GB1060303A (en) | 1967-03-01 |
| DK126811B (da) | 1973-08-20 |
| US3226614A (en) | 1965-12-28 |
| NO115810B (enExample) | 1968-12-09 |
| NO119489B (enExample) | 1970-05-25 |
| SE338619B (enExample) | 1971-09-13 |
| DE1295094B (de) | 1969-05-14 |
| NL146646B (nl) | 1975-07-15 |
| US3226612A (en) | 1965-12-28 |
| US3226613A (en) | 1965-12-28 |
| DE6609659U (de) | 1972-08-24 |
| NL302804A (enExample) | 1900-01-01 |
| US3226611A (en) | 1965-12-28 |
| SE315660B (enExample) | 1969-10-06 |
| US3309245A (en) | 1967-03-14 |
| BE636317A (enExample) | 1900-01-01 |
| NL297002A (enExample) | 1900-01-01 |