BE612167A - Matière semi-conductrice et procédé pour son obtention. - Google Patents
Matière semi-conductrice et procédé pour son obtention.Info
- Publication number
- BE612167A BE612167A BE612167A BE612167A BE612167A BE 612167 A BE612167 A BE 612167A BE 612167 A BE612167 A BE 612167A BE 612167 A BE612167 A BE 612167A BE 612167 A BE612167 A BE 612167A
- Authority
- BE
- Belgium
- Prior art keywords
- obtaining
- semiconductor material
- semiconductor
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US85173A US3271208A (en) | 1960-12-29 | 1960-12-29 | Producing an n+n junction using antimony |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE612167A true BE612167A (fr) | 1962-06-29 |
Family
ID=22189924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE612167A BE612167A (fr) | 1960-12-29 | 1961-12-29 | Matière semi-conductrice et procédé pour son obtention. |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US3271208A (fr) |
| AT (1) | AT245040B (fr) |
| BE (1) | BE612167A (fr) |
| CH (1) | CH397877A (fr) |
| DK (1) | DK126461B (fr) |
| ES (1) | ES273686A1 (fr) |
| FR (1) | FR1312203A (fr) |
| GB (1) | GB1000731A (fr) |
| NL (1) | NL273009A (fr) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1544253C3 (de) * | 1964-09-14 | 1974-08-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum epitaktischen Abscheiden yon Halbleitermaterial |
| US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
| US3502516A (en) * | 1964-11-06 | 1970-03-24 | Siemens Ag | Method for producing pure semiconductor material for electronic purposes |
| US3383571A (en) * | 1965-07-19 | 1968-05-14 | Rca Corp | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
| US3391270A (en) * | 1965-07-27 | 1968-07-02 | Monsanto Co | Electric resistance heaters |
| US3515840A (en) * | 1965-10-20 | 1970-06-02 | Gti Corp | Diode sealer |
| US3522164A (en) * | 1965-10-21 | 1970-07-28 | Texas Instruments Inc | Semiconductor surface preparation and device fabrication |
| US3454434A (en) * | 1966-05-09 | 1969-07-08 | Motorola Inc | Multilayer semiconductor device |
| US3512056A (en) * | 1967-04-25 | 1970-05-12 | Westinghouse Electric Corp | Double epitaxial layer high power,high speed transistor |
| US3460009A (en) * | 1967-12-29 | 1969-08-05 | Westinghouse Electric Corp | Constant gain power transistor |
| US4170501A (en) * | 1978-02-15 | 1979-10-09 | Rca Corporation | Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition |
| US7772097B2 (en) * | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE509317A (fr) * | 1951-03-07 | 1900-01-01 | ||
| US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
| GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
| US2931958A (en) * | 1954-05-03 | 1960-04-05 | Nat Res Dev | Semi-conductor devices |
| US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
| DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
| NL259446A (fr) * | 1959-12-30 | 1900-01-01 | ||
| US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
-
0
- NL NL273009D patent/NL273009A/xx unknown
-
1960
- 1960-12-29 US US85173A patent/US3271208A/en not_active Expired - Lifetime
-
1961
- 1961-12-16 AT AT952661A patent/AT245040B/de active
- 1961-12-22 DK DK517961AA patent/DK126461B/da unknown
- 1961-12-23 ES ES0273686A patent/ES273686A1/es not_active Expired
- 1961-12-27 GB GB46321/61A patent/GB1000731A/en not_active Expired
- 1961-12-28 FR FR883360A patent/FR1312203A/fr not_active Expired
- 1961-12-29 BE BE612167A patent/BE612167A/fr unknown
- 1961-12-29 CH CH1510961A patent/CH397877A/fr unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL273009A (fr) | |
| CH397877A (fr) | 1965-08-31 |
| US3271208A (en) | 1966-09-06 |
| DE1414921B2 (de) | 1971-12-16 |
| DK126461B (da) | 1973-07-16 |
| GB1000731A (en) | 1965-08-11 |
| FR1312203A (fr) | 1962-12-14 |
| AT245040B (de) | 1966-02-10 |
| DE1414921A1 (de) | 1969-03-27 |
| ES273686A1 (es) | 1962-05-01 |
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