ES273686A1 - Procedimiento para formar simultaneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material semiconductivo de diferentes conductividades - Google Patents
Procedimiento para formar simultaneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material semiconductivo de diferentes conductividadesInfo
- Publication number
- ES273686A1 ES273686A1 ES0273686A ES273686A ES273686A1 ES 273686 A1 ES273686 A1 ES 273686A1 ES 0273686 A ES0273686 A ES 0273686A ES 273686 A ES273686 A ES 273686A ES 273686 A1 ES273686 A1 ES 273686A1
- Authority
- ES
- Spain
- Prior art keywords
- wafers
- silicon
- ohm
- minutes
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/007—Autodoping
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/115—Orientation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Procedimiento para formar simultáneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material monocristalino, semiconductivo de diferentes conductividades, separadas por una zona de transición en la cual al menos una de las capas es de material de conductividad N y baja resistividad, mediante deposición de vapor, el cual comprende las fases de disponer dentro de una cámara de reacción una chapa monocristalina semiconductora con una capa superficial de un material monocristalino semiconductivo de conductividad N y de escasa resistividad, adicionado de un elemento impuro, como antimonio, bismuto o mezclas de ambos, para comunicar esta resistividad a dicha capa; introducir en la citada cámara un vapor descomponible que contiene átomos semiconductivos y átomos de impureza activa para comunicar una gran resistividad prefijada a los átomos semiconductivos; y depositar tales átomos del vapor, para formar una capa monocristalina semiconductora de gran resistividadsobre la mencionada capa N poco resistente.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85173A US3271208A (en) | 1960-12-29 | 1960-12-29 | Producing an n+n junction using antimony |
Publications (1)
Publication Number | Publication Date |
---|---|
ES273686A1 true ES273686A1 (es) | 1962-05-01 |
Family
ID=22189924
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0273686A Expired ES273686A1 (es) | 1960-12-29 | 1961-12-23 | Procedimiento para formar simultaneamente un cuerpo monocristalino semiconductor compuesto de varias capas de material semiconductivo de diferentes conductividades |
Country Status (9)
Country | Link |
---|---|
US (1) | US3271208A (es) |
AT (1) | AT245040B (es) |
BE (1) | BE612167A (es) |
CH (1) | CH397877A (es) |
DK (1) | DK126461B (es) |
ES (1) | ES273686A1 (es) |
FR (1) | FR1312203A (es) |
GB (1) | GB1000731A (es) |
NL (1) | NL273009A (es) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1544253C3 (de) * | 1964-09-14 | 1974-08-15 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Vorrichtung zum epitaktischen Abscheiden yon Halbleitermaterial |
US3500141A (en) * | 1964-10-13 | 1970-03-10 | Ibm | Transistor structure |
US3502516A (en) * | 1964-11-06 | 1970-03-24 | Siemens Ag | Method for producing pure semiconductor material for electronic purposes |
US3383571A (en) * | 1965-07-19 | 1968-05-14 | Rca Corp | High-frequency power transistor with improved reverse-bias second breakdown characteristics |
US3391270A (en) * | 1965-07-27 | 1968-07-02 | Monsanto Co | Electric resistance heaters |
US3515840A (en) * | 1965-10-20 | 1970-06-02 | Gti Corp | Diode sealer |
US3522164A (en) * | 1965-10-21 | 1970-07-28 | Texas Instruments Inc | Semiconductor surface preparation and device fabrication |
US3454434A (en) * | 1966-05-09 | 1969-07-08 | Motorola Inc | Multilayer semiconductor device |
US3512056A (en) * | 1967-04-25 | 1970-05-12 | Westinghouse Electric Corp | Double epitaxial layer high power,high speed transistor |
US3460009A (en) * | 1967-12-29 | 1969-08-05 | Westinghouse Electric Corp | Constant gain power transistor |
US4170501A (en) * | 1978-02-15 | 1979-10-09 | Rca Corporation | Method of making a semiconductor integrated circuit device utilizing simultaneous outdiffusion and autodoping during epitaxial deposition |
US7772097B2 (en) * | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE509317A (es) * | 1951-03-07 | 1900-01-01 | ||
US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
US2931958A (en) * | 1954-05-03 | 1960-04-05 | Nat Res Dev | Semi-conductor devices |
US2895858A (en) * | 1955-06-21 | 1959-07-21 | Hughes Aircraft Co | Method of producing semiconductor crystal bodies |
DE1029941B (de) * | 1955-07-13 | 1958-05-14 | Siemens Ag | Verfahren zur Herstellung von einkristallinen Halbleiterschichten |
NL259446A (es) * | 1959-12-30 | 1900-01-01 | ||
US3131098A (en) * | 1960-10-26 | 1964-04-28 | Merck & Co Inc | Epitaxial deposition on a substrate placed in a socket of the carrier member |
-
0
- NL NL273009D patent/NL273009A/xx unknown
-
1960
- 1960-12-29 US US85173A patent/US3271208A/en not_active Expired - Lifetime
-
1961
- 1961-12-16 AT AT952661A patent/AT245040B/de active
- 1961-12-22 DK DK517961AA patent/DK126461B/da unknown
- 1961-12-23 ES ES0273686A patent/ES273686A1/es not_active Expired
- 1961-12-27 GB GB46321/61A patent/GB1000731A/en not_active Expired
- 1961-12-28 FR FR883360A patent/FR1312203A/fr not_active Expired
- 1961-12-29 BE BE612167A patent/BE612167A/fr unknown
- 1961-12-29 CH CH1510961A patent/CH397877A/fr unknown
Also Published As
Publication number | Publication date |
---|---|
NL273009A (es) | |
CH397877A (fr) | 1965-08-31 |
US3271208A (en) | 1966-09-06 |
BE612167A (fr) | 1962-06-29 |
DE1414921B2 (de) | 1971-12-16 |
DK126461B (da) | 1973-07-16 |
GB1000731A (en) | 1965-08-11 |
FR1312203A (fr) | 1962-12-14 |
AT245040B (de) | 1966-02-10 |
DE1414921A1 (de) | 1969-03-27 |
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