BE583121A - - Google Patents

Info

Publication number
BE583121A
BE583121A BE583121DA BE583121A BE 583121 A BE583121 A BE 583121A BE 583121D A BE583121D A BE 583121DA BE 583121 A BE583121 A BE 583121A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE583121A publication Critical patent/BE583121A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE583121D 1958-09-30 BE583121A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES60101A DE1113520B (de) 1958-09-30 1958-09-30 Verfahren zur Herstellung von Halbleiteranordnungen, insbesondere fuer Starkstromzwecke, mit mehreren verhaeltnismaessig grossflaechigen Schichten unterschiedlichen Leitfaehigkeitstyps

Publications (1)

Publication Number Publication Date
BE583121A true BE583121A (en:Method)

Family

ID=7493854

Family Applications (1)

Application Number Title Priority Date Filing Date
BE583121D BE583121A (en:Method) 1958-09-30

Country Status (6)

Country Link
BE (1) BE583121A (en:Method)
CH (1) CH374773A (en:Method)
DE (1) DE1113520B (en:Method)
FR (1) FR1233333A (en:Method)
GB (1) GB909335A (en:Method)
NL (1) NL242039A (en:Method)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE668063A (en:Method) * 1963-06-25
DE1278016B (de) * 1963-11-16 1968-09-19 Siemens Ag Halbleiterbauelement mit einem einkristallinen Halbleiterkoerper
GB1072703A (en) * 1964-05-12 1967-06-21 Mullard Ltd Improvements in and relating to methods of manufacturing semiconductor bodies
DE1216989B (de) * 1964-06-24 1966-05-18 Licentia Gmbh Verfahren zum Herstellen eines Halbleiter-bauelementes mit einem Siliziumkoerper

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2821493A (en) * 1954-03-18 1958-01-28 Hughes Aircraft Co Fused junction transistors with regrown base regions

Also Published As

Publication number Publication date
NL242039A (en:Method)
DE1113520B (de) 1961-09-07
FR1233333A (fr) 1960-10-12
GB909335A (en) 1962-10-31
CH374773A (de) 1964-01-31

Similar Documents

Publication Publication Date Title
JPS3518028B1 (en:Method)
AT214638B (en:Method)
AT221043B (en:Method)
AT217439B (en:Method)
AT215747B (en:Method)
AT213446B (en:Method)
AT216227B (en:Method)
AT215751B (en:Method)
AT213908B (en:Method)
JPS3524595Y1 (en:Method)
AT219815B (en:Method)
AT214348B (en:Method)
AT214270B (en:Method)
AT213670B (en:Method)
AT213631B (en:Method)
AT213558B (en:Method)
AT213557B (en:Method)
AT216612B (en:Method)
AT216749B (en:Method)
AT216771B (en:Method)
AT216803B (en:Method)
AT216831B (en:Method)
AT213472B (en:Method)
AT217982B (en:Method)
AT213337B (en:Method)