US3154692A
(en)
*
|
1960-01-08 |
1964-10-27 |
Clevite Corp |
Voltage regulating semiconductor device
|
US3023347A
(en)
*
|
1960-07-15 |
1962-02-27 |
Westinghouse Electric Corp |
Oscillator having predetermined temperature-frequency characteristics
|
US3183129A
(en)
*
|
1960-10-14 |
1965-05-11 |
Fairchild Camera Instr Co |
Method of forming a semiconductor
|
US3173101A
(en)
*
|
1961-02-15 |
1965-03-09 |
Westinghouse Electric Corp |
Monolithic two stage unipolar-bipolar semiconductor amplifier device
|
US3142021A
(en)
*
|
1961-02-27 |
1964-07-21 |
Westinghouse Electric Corp |
Monolithic semiconductor amplifier providing two amplifier stages
|
US3193740A
(en)
*
|
1961-09-16 |
1965-07-06 |
Nippon Electric Co |
Semiconductor device
|
BE632999A
(pt)
*
|
1962-06-01 |
|
|
|
GB1039342A
(en)
*
|
1963-04-17 |
1966-08-17 |
Standard Telephones Cables Ltd |
Improvements in or relating to decoding equipment
|
US3404321A
(en)
*
|
1963-01-29 |
1968-10-01 |
Nippon Electric Co |
Transistor body enclosing a submerged integrated resistor
|
US3217215A
(en)
*
|
1963-07-05 |
1965-11-09 |
Int Rectifier Corp |
Field effect transistor
|
US3460004A
(en)
*
|
1963-08-20 |
1969-08-05 |
Siemens Ag |
Mechanical to electrical semiconductor transducer
|
US3354364A
(en)
*
|
1963-08-22 |
1967-11-21 |
Nippon Electric Co |
Discontinuous resistance semiconductor device
|
US3343026A
(en)
*
|
1963-11-27 |
1967-09-19 |
H P Associates |
Semi-conductive radiation source
|
US3343114A
(en)
*
|
1963-12-30 |
1967-09-19 |
Texas Instruments Inc |
Temperature transducer
|
US3265905A
(en)
*
|
1964-02-06 |
1966-08-09 |
Us Army |
Integrated semiconductor resistance element
|
US3304469A
(en)
*
|
1964-03-03 |
1967-02-14 |
Rca Corp |
Field effect solid state device having a partially insulated electrode
|
US3351824A
(en)
*
|
1964-04-28 |
1967-11-07 |
Northern Electric Co |
Constant current device
|
US3303464A
(en)
*
|
1964-05-27 |
1967-02-07 |
Harris Intertype Corp |
Ring-sum logic circuit
|
US3320568A
(en)
*
|
1964-08-10 |
1967-05-16 |
Raytheon Co |
Sensitized notched transducers
|
US3400390A
(en)
*
|
1964-10-05 |
1968-09-03 |
Schlumberger Technology Corp |
Signal converter for converting a binary signal to a reciprocal analog signal
|
US3435302A
(en)
*
|
1964-11-26 |
1969-03-25 |
Sumitomo Electric Industries |
Constant current semiconductor device
|
GB1194307A
(en)
*
|
1969-03-07 |
1970-06-10 |
Ibm |
Digital to Analog Conversion.
|
US3612773A
(en)
*
|
1969-07-22 |
1971-10-12 |
Bell Telephone Labor Inc |
Electronic frequency switching circuit for multifrequency signal generator
|
US3646587A
(en)
*
|
1969-12-16 |
1972-02-29 |
Hughes Aircraft Co |
Digital-to-analog converter using field effect transistor switch resistors
|
US3755807A
(en)
*
|
1972-02-15 |
1973-08-28 |
Collins Radio Co |
Resistor-ladder circuit
|
DE2528090C2
(de)
*
|
1974-07-01 |
1985-06-05 |
General Electric Co., Schenectady, N.Y. |
Mehrphasen-Stoßspannungsunterdrücker
|
US4496963A
(en)
*
|
1976-08-20 |
1985-01-29 |
National Semiconductor Corporation |
Semiconductor device with an ion implanted stabilization layer
|
US4187513A
(en)
*
|
1977-11-30 |
1980-02-05 |
Eaton Corporation |
Solid state current limiter
|
US4209781A
(en)
*
|
1978-05-19 |
1980-06-24 |
Texas Instruments Incorporated |
MOS Digital-to-analog converter employing scaled field effect devices
|
DE2939455C2
(de)
*
|
1979-09-28 |
1983-11-17 |
Siemens AG, 1000 Berlin und 8000 München |
Schaltungsanordnung zur Umsetzung von Digital-Signalen, insbesondere PCM-Signalen, in diesen entsprechende Analog-Signale, mit einem R-2R-Kettennetzwerk
|
FR2469836A1
(fr)
*
|
1979-11-16 |
1981-05-22 |
Hennion Bernard |
Systeme de codage et decodage a multiniveaux en courant
|
DE3005301C2
(de)
*
|
1980-02-13 |
1985-11-21 |
Telefunken electronic GmbH, 7100 Heilbronn |
Varaktor- oder Mischerdiode
|
DE3018542A1
(de)
*
|
1980-05-14 |
1981-11-19 |
Siemens AG, 1000 Berlin und 8000 München |
Thyristor mit steuerbarem emitter-kurzschluss und verfahren zu seinem betrieb
|
US4339707A
(en)
*
|
1980-12-24 |
1982-07-13 |
Honeywell Inc. |
Band gap voltage regulator
|
US4472648A
(en)
*
|
1981-08-25 |
1984-09-18 |
Harris Corporation |
Transistor circuit for reducing gate leakage current in a JFET
|
US4633281A
(en)
*
|
1984-06-08 |
1986-12-30 |
Eaton Corporation |
Dual stack power JFET with buried field shaping depletion regions
|
US4603319A
(en)
*
|
1984-08-27 |
1986-07-29 |
Rca Corporation |
Digital-to-analog converter with reduced output capacitance
|
FR2592250B1
(fr)
*
|
1985-12-24 |
1990-07-13 |
Thomson Csf |
Source de courant programmable et convertisseur numerique-analogique comportant une telle source.
|
FR2623350B1
(fr)
*
|
1987-11-17 |
1990-02-16 |
Thomson Hybrides Microondes |
Convertisseur numerique analogique a haute stabilite de tension de sortie
|
US5021856A
(en)
*
|
1989-03-15 |
1991-06-04 |
Plessey Overseas Limited |
Universal cell for bipolar NPN and PNP transistors and resistive elements
|
JPH10508430A
(ja)
*
|
1994-06-09 |
1998-08-18 |
チップスケール・インコーポレーテッド |
抵抗器の製造
|
US10250210B2
(en)
|
2016-07-05 |
2019-04-02 |
Dialog Semiconductor (Uk) Limited |
Circuit and method for a high common mode rejection amplifier by using a digitally controlled gain trim circuit
|