|
JP4685120B2
(ja)
|
|
光電変換装置及び撮像システム
|
|
JP5458260B2
(ja)
|
|
直接型ｘ線変換に基づく積分検出器に関する漏れ電流及び残留信号の補償
|
|
US7019345B2
(en)
|
|
Photodiode CMOS imager with column-feedback soft-reset for imaging under ultra-low illumination and with high dynamic range
|
|
KR101885093B1
(ko)
|
|
다이나믹 비전 센서 내의 시간 미분 광-센싱 시스템을 위한 저-부정합-임팩트 및 저-소비성 트랜스임피던스 이득 회로
|
|
JPH08331457A
(ja)
|
|
光センサ回路
|
|
JPS5836298B2
(ja)
|
|
ネツテキゾウケイセイソウチ
|
|
TW200425729A
(en)
|
|
Solid-state imaging device
|
|
CA2459268A1
(en)
|
|
Radiological image pickup apparatus
|
|
JP2011252716A
(ja)
|
|
光強度測定方法
|
|
BE564400A
(enrdf_load_html_response)
|
|
|
|
FR2476938A1
(fr)
|
|
Etage d'amplification a coefficient d'amplification reglable et realise a l'aide de transistors a effet de champ
|
|
EP0692907B1
(fr)
|
|
Circuit de suppression de courant d'obscurité de photodétecteur
|
|
BE1021022B1
(nl)
|
|
Werkwijze voor het detecteren van een fotostroom
|
|
EP3715803B1
(en)
|
|
Optical detection circuit
|
|
Rehm et al.
|
|
InAs/GaSb superlattice infrared detectors |
|
EP4025886A1
(fr)
|
|
Capteur infrarouge a capture instantanee
|
|
JP2009265000A
(ja)
|
|
熱型赤外線検出素子
|
|
FR2806807A1
(fr)
|
|
Detecteur de rayonnement a jonction semi-conductrice pour la mesure de forts debits de dose de rayonnement x ou gamma
|
|
US5739561A
(en)
|
|
Light sensitive semiconductor device and method of operation
|
|
FR2674705A1
(fr)
|
|
Dispositif amplificateur video.
|
|
Park et al.
|
|
Active pixel sensor using a 1× 16 nano-wire photodetector array for complementary metal oxide semiconductor imagers |
|
JP5258806B2
(ja)
|
|
光電変換装置
|
|
JPS6230363B2
(enrdf_load_html_response)
|
|
|
|
FR2789532A1
(fr)
|
|
Generateur de rampe de tension et generateur de rampe de courant comprenant un tel generateur
|
|
Le Roch et al.
|
|
WORKSHOP PAPER Leakage Current Non-Uniformity and Random Telegraph Signal in CMOS Image Sensor Floating Diffusions used for In-Pixel Charge Storage |