BE562973A - - Google Patents

Info

Publication number
BE562973A
BE562973A BE562973DA BE562973A BE 562973 A BE562973 A BE 562973A BE 562973D A BE562973D A BE 562973DA BE 562973 A BE562973 A BE 562973A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Publication of BE562973A publication Critical patent/BE562973A/xx

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/32Anodisation of semiconducting materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/121Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/10Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00Encapsulations, e.g. protective coatings
    • H10W74/40Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6324Formation by anodic treatments, e.g. anodic oxidation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
BE562973D 1956-12-06 BE562973A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US626623A US2875384A (en) 1956-12-06 1956-12-06 Semiconductor devices

Publications (1)

Publication Number Publication Date
BE562973A true BE562973A (en:Method) 1900-01-01

Family

ID=24511156

Family Applications (1)

Application Number Title Priority Date Filing Date
BE562973D BE562973A (en:Method) 1956-12-06

Country Status (5)

Country Link
US (1) US2875384A (en:Method)
BE (1) BE562973A (en:Method)
DE (1) DE1037016B (en:Method)
FR (1) FR1188659A (en:Method)
GB (1) GB882076A (en:Method)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1078238B (de) * 1958-09-26 1960-03-24 Siemens Ag Gleichrichteranordnung mit pn-UEbergang und Verfahren zu ihrer Herstellung
FR1222719A (fr) * 1959-01-21 1960-06-13 Labo Cent Telecommunicat Procédés de fabrication de dispositifs semi-conducteurs
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
DE1184178B (de) * 1960-02-20 1964-12-23 Standard Elektrik Lorenz Ag Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen
DE1163980B (de) * 1960-06-24 1964-02-27 Siemens Ag Verfahren zum schnellen Beseitigen von Wasserspuren von der Bildung einer Oxydhaut auf der Oberflaeche von oxydierbaren Halbleiterkoerpern mit oder ohne Elektroden fuer Halbleiterbauelemente
DE1151072B (de) * 1960-07-08 1963-07-04 Licentia Gmbh Verfahren zum Stabilisieren der Kennlinie von in Halbleiterkoerper aus Silizium oder Germanium einlegierten p-n-UEbergaengen
DE1206088B (de) * 1961-02-10 1965-12-02 Siemens Ag Halbleiteranordnung mit einem im wesentlichen einkristallinen Grundkoerper, insbesondere aus Silizium
DE1141386B (de) * 1961-04-26 1962-12-20 Siemens Ag Verfahren zur Herstellung einer Halbleiteranordnung
DE1292254B (de) * 1961-05-12 1969-04-10 Itt Ind Gmbh Deutsche Verfahren zum gleichzeitigen Herstellen gleichartiger Halbleiterbauelemente
NL282407A (en:Method) * 1961-08-30
DE1189654B (de) * 1961-09-14 1965-03-25 Licentia Gmbh Verfahren zum Herstellen eines schuetzenden Oxydfilms auf dem Halbleiterkoerper einesHalbleiterbauelements
NL287407A (en:Method) * 1961-11-18
US3312577A (en) * 1964-11-24 1967-04-04 Int Standard Electric Corp Process for passivating planar semiconductor devices
US3409979A (en) * 1965-02-02 1968-11-12 Int Standard Electric Corp Method for the surface treatment of semiconductor devices
US3474301A (en) * 1965-04-30 1969-10-21 Hitachi Ltd Semiconductor devices having insulating protective films and sealed with resinous materials
US3438874A (en) * 1966-05-11 1969-04-15 Bell Telephone Labor Inc Fabrication of solid thin film capacitor
JPS4913909B1 (en:Method) * 1970-05-04 1974-04-03
US3914465A (en) * 1972-09-25 1975-10-21 Bell Telephone Labor Inc Surface passivation of GaAs junction laser devices
DE2413608C2 (de) * 1974-03-21 1982-09-02 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen eines Halbleiterbauelements
US4608097A (en) * 1984-10-05 1986-08-26 Exxon Research And Engineering Co. Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer
DE3517665A1 (de) * 1985-05-15 1986-11-20 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zum polieren von siliciumscheiben
KR20110069737A (ko) * 2009-12-17 2011-06-23 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨. 개선된 반도체 기판 텍스쳐링 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1748012A (en) * 1928-09-12 1930-02-18 William D Dooley Rectifying device and method of producing the same
US2711496A (en) * 1952-09-27 1955-06-21 Ruben Samuel Lead peroxide rectifiers and method of making the same

Also Published As

Publication number Publication date
GB882076A (en) 1961-11-08
US2875384A (en) 1959-02-24
DE1037016B (de) 1958-08-21
FR1188659A (fr) 1959-09-24

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