BE560244A - - Google Patents

Info

Publication number
BE560244A
BE560244A BE560244DA BE560244A BE 560244 A BE560244 A BE 560244A BE 560244D A BE560244D A BE 560244DA BE 560244 A BE560244 A BE 560244A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE560244A publication Critical patent/BE560244A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03LAUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L5/00Automatic control of voltage, current, or power
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00Electrolytic etching or polishing
    • C25F3/02Etching
    • C25F3/12Etching of semiconducting materials
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K23/00Pulse counters comprising counting chains; Frequency dividers comprising counting chains
    • H03K23/002Pulse counters comprising counting chains; Frequency dividers comprising counting chains using semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/35Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions
BE560244D 1956-08-24 BE560244A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL210117 1956-08-24
NL218102 1957-06-13

Publications (1)

Publication Number Publication Date
BE560244A true BE560244A (de)

Family

ID=26641607

Family Applications (1)

Application Number Title Priority Date Filing Date
BE560244D BE560244A (de) 1956-08-24

Country Status (7)

Country Link
US (2) US3081418A (de)
BE (1) BE560244A (de)
CH (1) CH365803A (de)
DE (2) DE1092131B (de)
FR (2) FR1200738A (de)
GB (2) GB879649A (de)
NL (3) NL106110C (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1137140B (de) * 1959-04-06 1962-09-27 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB914832A (en) * 1959-12-11 1963-01-09 Gen Electric Improvements in semiconductor devices and method of fabricating the same
NL258921A (de) * 1959-12-14
US3192141A (en) * 1959-12-24 1965-06-29 Western Electric Co Simultaneous etching and monitoring of semiconductor bodies
DE1211336B (de) * 1960-02-12 1966-02-24 Shindengen Electric Mfg Halbleitergleichrichter mit zwei Schichten von verschiedenem spezifischem Widerstand
DE1171537B (de) * 1960-04-02 1964-06-04 Telefunken Patent Verfahren zur Herstellung einer Halbleiterdiode
NL133499C (de) * 1960-05-18
US3196094A (en) * 1960-06-13 1965-07-20 Ibm Method of automatically etching an esaki diode
US3168649A (en) * 1960-08-05 1965-02-02 Bell Telephone Labor Inc Shift register employing bistable multiregion semiconductive devices
US3163568A (en) * 1961-02-15 1964-12-29 Sylvania Electric Prod Method of treating semiconductor devices
US3181983A (en) * 1961-03-06 1965-05-04 Sperry Rand Corp Method for controlling the characteristic of a tunnel diode
NL284582A (de) * 1961-11-25
US3211911A (en) * 1962-09-11 1965-10-12 Justin M Ruhge Method and photocell device for obtaining light source position data
GB1028393A (en) * 1963-03-13 1966-05-04 Siemens Ag Semi-conductor components
US3349252A (en) * 1964-03-16 1967-10-24 Automatic Elect Lab Minority carrier storage flip-flop
DE1439442A1 (de) * 1964-09-12 1968-12-05 Siemens Ag Halbleiterstromtor vom pnpn-Typ
DE1496870A1 (de) * 1964-10-01 1970-01-08 Hitachi Ltd Verfahren zur Herstellung einer Halbleiteranordnung
US3443102A (en) * 1964-10-28 1969-05-06 Electro Optical Systems Inc Semiconductor photocell detector with variable spectral response
US3418226A (en) * 1965-05-18 1968-12-24 Ibm Method of electrolytically etching a semiconductor having a single impurity gradient
US3430109A (en) * 1965-09-28 1969-02-25 Chou H Li Solid-state device with differentially expanded junction surface
NL6607800A (de) * 1966-06-04 1967-12-05
US3408275A (en) * 1966-12-09 1968-10-29 Siemens Ag Tunnel diodes wherein the height of the reduced cross section of the mesa is minimized and process of making
DE2332144C3 (de) * 1973-06-25 1981-06-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Transistor und Verfahren zu seiner Herstellung
NL8700370A (nl) * 1987-02-16 1988-09-16 Philips Nv Stralingsgevoelige halfgeleiderinrichting.
US20040144999A1 (en) * 1995-06-07 2004-07-29 Li Chou H. Integrated circuit device
US20100276733A1 (en) * 2000-09-27 2010-11-04 Li Choa H Solid-state circuit device
US7118942B1 (en) 2000-09-27 2006-10-10 Li Chou H Method of making atomic integrated circuit device
US9062197B2 (en) 2009-03-27 2015-06-23 Eastman Chemical Company Polyester blends

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB763734A (en) * 1953-12-03 1956-12-19 Standard Telephones Cables Ltd Improvements in or relating to electrical circuits employing transistors
US2697269A (en) * 1950-07-24 1954-12-21 Bell Telephone Labor Inc Method of making semiconductor translating devices
BE520677A (de) * 1950-09-29
NL222686A (de) * 1950-11-28
NL91981C (de) * 1951-08-24
NL113882C (de) * 1952-06-13
US2644896A (en) * 1952-07-29 1953-07-07 Rca Corp Transistor bistable circuit
US2764642A (en) * 1952-10-31 1956-09-25 Bell Telephone Labor Inc Semiconductor signal translating devices
BE525428A (de) * 1952-12-30
US2790034A (en) * 1953-03-05 1957-04-23 Bell Telephone Labor Inc Semiconductor signal translating devices
US2754431A (en) * 1953-03-09 1956-07-10 Rca Corp Semiconductor devices
US2792539A (en) * 1953-07-07 1957-05-14 Sprague Electric Co Transistor construction
US2907934A (en) * 1953-08-12 1959-10-06 Gen Electric Non-linear resistance device
US2802159A (en) * 1953-10-20 1957-08-06 Hughes Aircraft Co Junction-type semiconductor devices
NL91363C (de) * 1954-05-18
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices
US2820153A (en) * 1954-10-25 1958-01-14 Rca Corp Electronic counter systems
US2885609A (en) * 1955-01-31 1959-05-05 Philco Corp Semiconductive device and method for the fabrication thereof
US2757439A (en) * 1955-02-25 1956-08-07 Raytheon Mfg Co Transistor assemblies
BE546329A (de) * 1955-04-20
US2941131A (en) * 1955-05-13 1960-06-14 Philco Corp Semiconductive apparatus
US2842668A (en) * 1955-05-25 1958-07-08 Ibm High frequency transistor oscillator
US2927222A (en) * 1955-05-27 1960-03-01 Philco Corp Polarizing semiconductive apparatus
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit
US2765986A (en) * 1955-07-11 1956-10-09 Cybertronic Corp Of America Photo-transistor control system
US2862115A (en) * 1955-07-13 1958-11-25 Bell Telephone Labor Inc Semiconductor circuit controlling devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1137140B (de) * 1959-04-06 1962-09-27 Int Standard Electric Corp Verfahren zum Herstellen von elektrischen Halbleiterbauelementen mit verminderter Oberflaechenleitfaehigkeit am p-n-UEbergang und verminderter Alterung

Also Published As

Publication number Publication date
DE1092131B (de) 1960-11-03
NL106110C (de)
NL210117A (de)
US3081418A (en) 1963-03-12
FR1200738A (fr) 1959-12-23
GB879649A (en) 1961-10-11
NL218102A (de)
FR73723E (fr) 1960-09-05
US3047739A (en) 1962-07-31
DE1136371B (de) 1962-09-13
GB879651A (en) 1961-10-11
CH365803A (de) 1962-11-30

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