BE550586A - - Google Patents
Info
- Publication number
- BE550586A BE550586A BE550586DA BE550586A BE 550586 A BE550586 A BE 550586A BE 550586D A BE550586D A BE 550586DA BE 550586 A BE550586 A BE 550586A
- Authority
- BE
- Belgium
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/52—Multiple coating or impregnating multiple coating or impregnating with the same composition or with compositions only differing in the concentration of the constituents, is classified as single coating or impregnation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/036—Diffusion, nonselective
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/144—Shallow diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/92—Controlling diffusion profile by oxidation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Materials Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US550622A US2802760A (en) | 1955-12-02 | 1955-12-02 | Oxidation of semiconductive surfaces for controlled diffusion |
Publications (1)
Publication Number | Publication Date |
---|---|
BE550586A true BE550586A (me) |
Family
ID=24197930
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
BE550586D BE550586A (me) | 1955-12-02 |
Country Status (6)
Country | Link |
---|---|
US (1) | US2802760A (me) |
BE (1) | BE550586A (me) |
DE (1) | DE1086512B (me) |
FR (1) | FR1157894A (me) |
GB (1) | GB809644A (me) |
NL (2) | NL109817C (me) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1196297B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
Families Citing this family (83)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL201780A (me) * | 1955-11-05 | |||
NL113003C (me) * | 1956-08-10 | |||
US2879190A (en) * | 1957-03-22 | 1959-03-24 | Bell Telephone Labor Inc | Fabrication of silicon devices |
BE568830A (me) * | 1957-06-25 | |||
BE570082A (me) * | 1957-08-07 | 1900-01-01 | ||
DE1095401B (de) * | 1958-04-16 | 1960-12-22 | Standard Elektrik Lorenz Ag | Verfahren zum Eindiffundieren von Fremdstoffen in einen Halbleiterkoerper zur Herstellung einer elektrischen Halbleiteranordnung |
GB909869A (me) * | 1958-06-09 | 1900-01-01 | ||
NL241124A (me) * | 1958-07-09 | |||
US3007816A (en) * | 1958-07-28 | 1961-11-07 | Motorola Inc | Decontamination process |
NL231155A (me) * | 1958-09-05 | |||
US3001896A (en) * | 1958-12-24 | 1961-09-26 | Ibm | Diffusion control in germanium |
NL155412C (me) * | 1959-04-15 | |||
US3054701A (en) * | 1959-06-10 | 1962-09-18 | Westinghouse Electric Corp | Process for preparing p-n junctions in semiconductors |
NL252131A (me) * | 1959-06-30 | |||
NL256928A (me) * | 1959-10-29 | |||
US3102061A (en) * | 1960-01-05 | 1963-08-27 | Texas Instruments Inc | Method for thermally etching silicon surfaces |
US3147152A (en) * | 1960-01-28 | 1964-09-01 | Western Electric Co | Diffusion control in semiconductive bodies |
DE1133038B (de) * | 1960-05-10 | 1962-07-12 | Siemens Ag | Halbleiterbauelement mit einem im wesentlichen einkristallinen Halbleiterkoerper undvier Zonen abwechselnden Leitfaehigkeitstyps |
US3084079A (en) * | 1960-10-13 | 1963-04-02 | Pacific Semiconductors Inc | Manufacture of semiconductor devices |
US3183129A (en) * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor |
US3193418A (en) * | 1960-10-27 | 1965-07-06 | Fairchild Camera Instr Co | Semiconductor device fabrication |
US3145126A (en) * | 1961-01-10 | 1964-08-18 | Clevite Corp | Method of making diffused junctions |
NL274819A (me) * | 1961-02-20 | 1900-01-01 | ||
NL277300A (me) * | 1961-04-20 | |||
US3095341A (en) * | 1961-06-30 | 1963-06-25 | Bell Telephone Labor Inc | Photosensitive gas phase etching of semiconductors by selective radiation |
US3138495A (en) * | 1961-07-28 | 1964-06-23 | Texas Instruments Inc | Semiconductor device and method of manufacture |
US3210225A (en) * | 1961-08-18 | 1965-10-05 | Texas Instruments Inc | Method of making transistor |
US3237062A (en) * | 1961-10-20 | 1966-02-22 | Westinghouse Electric Corp | Monolithic semiconductor devices |
US3194699A (en) * | 1961-11-13 | 1965-07-13 | Transitron Electronic Corp | Method of making semiconductive devices |
US3156593A (en) * | 1961-11-17 | 1964-11-10 | Bell Telephone Labor Inc | Fabrication of semiconductor devices |
NL285088A (me) * | 1961-11-18 | |||
BE625431A (me) * | 1961-11-30 | |||
US3203840A (en) * | 1961-12-14 | 1965-08-31 | Texas Insutruments Inc | Diffusion method |
US3139362A (en) * | 1961-12-29 | 1964-06-30 | Bell Telephone Labor Inc | Method of manufacturing semiconductive devices |
US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
DE1444521B2 (de) * | 1962-02-01 | 1971-02-25 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zur herstellung einer halbleiteranordnung |
US3133840A (en) * | 1962-03-08 | 1964-05-19 | Bell Telephone Labor Inc | Stabilization of junction devices with phosphorous tribromide |
DE1199897B (de) * | 1962-04-03 | 1965-09-02 | Philips Nv | Verfahren zur Herstellung einer Sperrschicht in einem n-leitenden Cadmiumsulfidkoerper |
US3212160A (en) * | 1962-05-18 | 1965-10-19 | Transitron Electronic Corp | Method of manufacturing semiconductive devices |
US3247032A (en) * | 1962-06-20 | 1966-04-19 | Continental Device Corp | Method for controlling diffusion of an active impurity material into a semiconductor body |
NL294675A (me) * | 1962-06-29 | |||
US3255005A (en) * | 1962-06-29 | 1966-06-07 | Tung Sol Electric Inc | Masking process for semiconductor elements |
US3158505A (en) * | 1962-07-23 | 1964-11-24 | Fairchild Camera Instr Co | Method of placing thick oxide coatings on silicon and article |
GB1012519A (en) * | 1962-08-14 | 1965-12-08 | Texas Instruments Inc | Field-effect transistors |
US3244567A (en) * | 1962-09-10 | 1966-04-05 | Trw Semiconductors Inc | Impurity diffusion method |
GB1052379A (me) * | 1963-03-28 | 1900-01-01 | ||
US3194701A (en) * | 1963-04-01 | 1965-07-13 | Robert P Lothrop | Method for forming p-n junctions on semiconductors |
US3281915A (en) * | 1963-04-02 | 1966-11-01 | Rca Corp | Method of fabricating a semiconductor device |
US3450581A (en) * | 1963-04-04 | 1969-06-17 | Texas Instruments Inc | Process of coating a semiconductor with a mask and diffusing an impurity therein |
BE650116A (me) * | 1963-07-05 | 1900-01-01 | ||
US3281291A (en) * | 1963-08-30 | 1966-10-25 | Rca Corp | Semiconductor device fabrication |
NL6407230A (me) * | 1963-09-28 | 1965-03-29 | ||
US3287188A (en) * | 1963-11-01 | 1966-11-22 | Hughes Aircraft Co | Method for producing a boron diffused sillicon transistor |
US3361594A (en) * | 1964-01-02 | 1968-01-02 | Globe Union Inc | Solar cell and process for making the same |
NL6501786A (me) * | 1964-02-26 | 1965-08-27 | ||
GB1045515A (en) * | 1964-04-22 | 1966-10-12 | Westinghouse Electric Corp | Electrolyte and diffusion process |
DE1719563C2 (de) * | 1965-04-30 | 1971-10-28 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur Eindiffusion von Phosphor in Siliciumhalbleiterscheiben. Ausscheidung aus: 1280821 |
US3313661A (en) * | 1965-05-14 | 1967-04-11 | Dickson Electronics Corp | Treating of surfaces of semiconductor elements |
GB1145121A (en) * | 1965-07-30 | 1969-03-12 | Associated Semiconductor Mft | Improvements in and relating to transistors |
US3351503A (en) * | 1965-09-10 | 1967-11-07 | Horizons Inc | Production of p-nu junctions by diffusion |
DE1521494B1 (de) * | 1966-02-25 | 1970-11-26 | Siemens Ag | Vorrichtung zum Eindiffundieren von Fremdstoffen in Halbleiterkoerper |
US3468729A (en) * | 1966-03-21 | 1969-09-23 | Westinghouse Electric Corp | Method of making a semiconductor by oxidizing and simultaneous diffusion of impurities having different rates of diffusivity |
US3490962A (en) * | 1966-04-25 | 1970-01-20 | Ibm | Diffusion process |
JPS556287B1 (me) * | 1966-04-27 | 1980-02-15 | ||
US3477887A (en) * | 1966-07-01 | 1969-11-11 | Motorola Inc | Gaseous diffusion method |
US3484854A (en) * | 1966-10-17 | 1969-12-16 | Westinghouse Electric Corp | Processing semiconductor materials |
US3532565A (en) * | 1967-12-07 | 1970-10-06 | United Aircraft Corp | Antimony pentachloride diffusion |
US3653988A (en) * | 1968-02-05 | 1972-04-04 | Bell Telephone Labor Inc | Method of forming monolithic semiconductor integrated circuit devices |
US3532539A (en) * | 1968-11-04 | 1970-10-06 | Hitachi Ltd | Method for treating the surface of semiconductor devices |
JPS4913909B1 (me) * | 1970-05-04 | 1974-04-03 | ||
US3943016A (en) * | 1970-12-07 | 1976-03-09 | General Electric Company | Gallium-phosphorus simultaneous diffusion process |
US3770521A (en) * | 1971-04-14 | 1973-11-06 | Ibm | Method for diffusing b or p into s: substrates |
US3742904A (en) * | 1971-06-03 | 1973-07-03 | Motorola Inc | Steam generator and gas insertion device |
US3855024A (en) * | 1971-11-01 | 1974-12-17 | Western Electric Co | Method of vapor-phase polishing a surface of a semiconductor |
US4409260A (en) * | 1979-08-15 | 1983-10-11 | Hughes Aircraft Company | Process for low-temperature surface layer oxidation of a semiconductor substrate |
US4472212A (en) * | 1982-02-26 | 1984-09-18 | At&T Bell Laboratories | Method for fabricating a semiconductor device |
EP0101737A4 (en) * | 1982-02-26 | 1984-08-20 | Western Electric Co | DIFFUSION OF LOW REGIONS. |
FR2547775B1 (fr) * | 1983-06-23 | 1987-12-18 | Metalem Sa | Procede de decoration d'un article, application d'un procede de traitement d'un element de silicium, utilisation d'une plaque de silicium traitee et article decore |
DE3815615A1 (de) * | 1988-05-07 | 1989-11-16 | Bosch Gmbh Robert | Verfahren zur herstellung einer hochsperrenden leistungsdiode |
US6555407B1 (en) | 1999-10-26 | 2003-04-29 | Zarlink Semiconductor Ab | Method for the controlled oxidiation of materials |
GB2355850A (en) * | 1999-10-26 | 2001-05-02 | Mitel Semiconductor Ab | Forming oxide layers in semiconductor layers |
US20050011860A1 (en) * | 2003-07-15 | 2005-01-20 | Masatoshi Ishii | Substrate for magnetic recording medium, method for manufacturing the same and magnetic recording medium |
TWI427695B (zh) * | 2009-12-17 | 2014-02-21 | 羅門哈斯電子材料有限公司 | 紋理化半導體基板之改良方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2485069A (en) * | 1944-07-20 | 1949-10-18 | Bell Telephone Labor Inc | Translating material of silicon base |
NL34436C (me) * | 1945-04-20 | |||
BE500569A (me) * | 1950-01-13 | |||
DE1067131B (de) * | 1954-09-15 | 1959-10-15 | Siemens &. Halske Aktiengesell schatt Berlin und München | Verfahren zum Herstellen einer Halbleiteranordnung mit einer zwischen einer Metallschicht und der Oberflache des Halbleiterkristalls erzeugten Randschicht |
-
0
- NL NL210216D patent/NL210216A/xx unknown
- BE BE550586D patent/BE550586A/xx unknown
- NL NL109817D patent/NL109817C/xx active
-
1955
- 1955-12-02 US US550622A patent/US2802760A/en not_active Expired - Lifetime
-
1956
- 1956-09-01 FR FR1157894D patent/FR1157894A/fr not_active Expired
- 1956-10-27 DE DEW19994A patent/DE1086512B/de active Pending
- 1956-11-29 GB GB36502/56A patent/GB809644A/en not_active Expired
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1196297B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE1196295B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung |
DE1196299B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE1196300B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiter-schaltungsanordnung |
DE1196298B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Verfahren zur Herstellung einer mikrominiaturisierten, integrierten Halbleiterschaltungsanordnung |
DE1196296B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE1196301B (de) * | 1959-02-06 | 1965-07-08 | Texas Instruments Inc | Verfahren zur Herstellung mikrominiaturisierter, integrierter Halbleiteranordnungen |
DE1196297C2 (de) * | 1959-02-06 | 1974-01-17 | Texas Instruments Inc | Mikrominiaturisierte, integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung |
DE1196299C2 (de) * | 1959-02-06 | 1974-03-07 | Texas Instruments Inc | Mikrominiaturisierte, integrierte halbleiterschaltungsanordnung und verfahren zu ihrer herstellung |
Also Published As
Publication number | Publication date |
---|---|
DE1086512B (de) | 1960-08-04 |
NL210216A (me) | |
GB809644A (en) | 1959-02-25 |
FR1157894A (fr) | 1958-06-04 |
NL109817C (me) | |
US2802760A (en) | 1957-08-13 |