BE548227A - - Google Patents

Info

Publication number
BE548227A
BE548227A BE548227DA BE548227A BE 548227 A BE548227 A BE 548227A BE 548227D A BE548227D A BE 548227DA BE 548227 A BE548227 A BE 548227A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE548227A publication Critical patent/BE548227A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE548227D 1955-07-22 BE548227A (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US523897A US2901325A (en) 1955-07-22 1955-07-22 Method of preparing silicon

Publications (1)

Publication Number Publication Date
BE548227A true BE548227A (en:Method)

Family

ID=24086883

Family Applications (1)

Application Number Title Priority Date Filing Date
BE548227D BE548227A (en:Method) 1955-07-22

Country Status (5)

Country Link
US (1) US2901325A (en:Method)
BE (1) BE548227A (en:Method)
CH (1) CH363971A (en:Method)
FR (1) FR1152632A (en:Method)
GB (1) GB792166A (en:Method)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3069241A (en) * 1958-03-21 1962-12-18 Int Standard Electric Corp Manufacture of high purity silicon
NL112832C (en:Method) * 1959-05-08
NL256017A (en:Method) * 1959-09-23 1900-01-01
US3090678A (en) * 1960-02-24 1963-05-21 American Metal Prod Method of refining silicon
DE1207341B (de) * 1960-06-11 1965-12-23 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Germanium- oder Siliciumstaeben
US3348915A (en) * 1961-11-07 1967-10-24 Norton Co Method for producing a crystalline carbide, boride or silicide
US3251658A (en) * 1963-02-26 1966-05-17 Monsanto Co Zone refining start-up
GB1103329A (en) * 1964-09-15 1968-02-14 Gen Trustee Co Ltd Refining of silicon
FR2430917A1 (fr) * 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
FR2487808A1 (fr) * 1980-08-01 1982-02-05 Electricite De France Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
JPH0699218B2 (ja) * 1989-04-26 1994-12-07 信越半導体株式会社 単結晶育成用コイル
DE4128325A1 (de) * 1991-08-27 1993-03-04 Bayer Ag Verfahren zur herstellung von silicium sowie vorrichtung zu dessen durchfuehrung
GB2355850A (en) * 1999-10-26 2001-05-02 Mitel Semiconductor Ab Forming oxide layers in semiconductor layers
US6555407B1 (en) 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
WO2008026931A1 (en) * 2006-08-30 2008-03-06 Norsk Hydro Asa Method and equipment for manufacturing multi-crystalline solar grade silicon from metallurgical silicon
CN107364870B (zh) * 2017-08-30 2019-11-12 宁晋松宫电子材料有限公司 一种半熔底部籽晶的高效除杂破碎工艺

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
FR957542A (en:Method) * 1941-04-04 1950-02-23
BE510303A (en:Method) * 1951-11-16

Also Published As

Publication number Publication date
US2901325A (en) 1959-08-25
GB792166A (en) 1958-03-19
CH363971A (de) 1962-08-31
FR1152632A (fr) 1958-02-21

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