CH363971A - Verfahren zur Reinigung von Silizium - Google Patents

Verfahren zur Reinigung von Silizium

Info

Publication number
CH363971A
CH363971A CH3565756A CH3565756A CH363971A CH 363971 A CH363971 A CH 363971A CH 3565756 A CH3565756 A CH 3565756A CH 3565756 A CH3565756 A CH 3565756A CH 363971 A CH363971 A CH 363971A
Authority
CH
Switzerland
Prior art keywords
cleaning silicon
silicon
cleaning
Prior art date
Application number
CH3565756A
Other languages
English (en)
Inventor
Charles Theuerer Henry
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH363971A publication Critical patent/CH363971A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
CH3565756A 1955-07-22 1956-07-20 Verfahren zur Reinigung von Silizium CH363971A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US523897A US2901325A (en) 1955-07-22 1955-07-22 Method of preparing silicon

Publications (1)

Publication Number Publication Date
CH363971A true CH363971A (de) 1962-08-31

Family

ID=24086883

Family Applications (1)

Application Number Title Priority Date Filing Date
CH3565756A CH363971A (de) 1955-07-22 1956-07-20 Verfahren zur Reinigung von Silizium

Country Status (5)

Country Link
US (1) US2901325A (de)
BE (1) BE548227A (de)
CH (1) CH363971A (de)
FR (1) FR1152632A (de)
GB (1) GB792166A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3069241A (en) * 1958-03-21 1962-12-18 Int Standard Electric Corp Manufacture of high purity silicon
NL112832C (de) * 1959-05-08
NL256017A (de) * 1959-09-23 1900-01-01
US3090678A (en) * 1960-02-24 1963-05-21 American Metal Prod Method of refining silicon
DE1207341B (de) * 1960-06-11 1965-12-23 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Germanium- oder Siliciumstaeben
US3348915A (en) * 1961-11-07 1967-10-24 Norton Co Method for producing a crystalline carbide, boride or silicide
US3251658A (en) * 1963-02-26 1966-05-17 Monsanto Co Zone refining start-up
GB1103329A (en) * 1964-09-15 1968-02-14 Gen Trustee Co Ltd Refining of silicon
FR2430917A1 (fr) * 1978-07-11 1980-02-08 Comp Generale Electricite Procede et dispositif d'elaboration de silicium polycristallin
FR2487808A1 (fr) * 1980-08-01 1982-02-05 Electricite De France Procede et dispositif d'elimination du bore dans le silicium par fusion de zone sous plasma reactif
US4400232A (en) * 1981-11-09 1983-08-23 Eagle-Picher Industries, Inc. Control of oxygen- and carbon-related crystal defects in silicon processing
DE3635064A1 (de) * 1986-10-15 1988-04-21 Bayer Ag Verfahren zur raffination von silicium und derart gereinigtes silicium
JPH0699218B2 (ja) * 1989-04-26 1994-12-07 信越半導体株式会社 単結晶育成用コイル
DE4128325A1 (de) * 1991-08-27 1993-03-04 Bayer Ag Verfahren zur herstellung von silicium sowie vorrichtung zu dessen durchfuehrung
US6555407B1 (en) 1999-10-26 2003-04-29 Zarlink Semiconductor Ab Method for the controlled oxidiation of materials
GB2355850A (en) * 1999-10-26 2001-05-02 Mitel Semiconductor Ab Forming oxide layers in semiconductor layers
WO2008026931A1 (en) * 2006-08-30 2008-03-06 Norsk Hydro Asa Method and equipment for manufacturing multi-crystalline solar grade silicon from metallurgical silicon
CN107364870B (zh) * 2017-08-30 2019-11-12 宁晋松宫电子材料有限公司 一种半熔底部籽晶的高效除杂破碎工艺

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
NL63276C (de) * 1941-04-04
NL168491B (de) * 1951-11-16 Roussel-Uclaf, Societe Anonyme Te Parijs.

Also Published As

Publication number Publication date
FR1152632A (fr) 1958-02-21
US2901325A (en) 1959-08-25
GB792166A (en) 1958-03-19
BE548227A (de)

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