NL63276C - - Google Patents

Info

Publication number
NL63276C
NL63276C NL63276DA NL63276C NL 63276 C NL63276 C NL 63276C NL 63276D A NL63276D A NL 63276DA NL 63276 C NL63276 C NL 63276C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL63276C publication Critical patent/NL63276C/xx

Links

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16G—BELTS, CABLES, OR ROPES, PREDOMINANTLY USED FOR DRIVING PURPOSES; CHAINS; FITTINGS PREDOMINANTLY USED THEREFOR
    • F16G11/00—Means for fastening cables or ropes to one another or to other objects; Caps or sleeves for fixing on cables or ropes
    • F16G11/12—Connections or attachments, e.g. turnbuckles, adapted for straining of cables, ropes, or wire
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1012—Apparatus with means for measuring, testing, or sensing with a window or port for visual observation or examination
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
NL63276D 1941-04-04 NL63276C (en:Method)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US386835A US2402582A (en) 1941-04-04 1941-04-04 Preparation of silicon materials

Publications (1)

Publication Number Publication Date
NL63276C true NL63276C (en:Method)

Family

ID=23527254

Family Applications (1)

Application Number Title Priority Date Filing Date
NL63276D NL63276C (en:Method) 1941-04-04

Country Status (4)

Country Link
US (1) US2402582A (en:Method)
FR (1) FR957542A (en:Method)
GB (1) GB590458A (en:Method)
NL (1) NL63276C (en:Method)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US2569892A (en) * 1941-11-05 1951-10-02 Hazeltine Research Inc Crystal contacts of which one element is mainly silicon
NL70486C (en:Method) * 1945-12-29
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
NL77451C (en:Method) * 1948-12-29
US2679080A (en) * 1949-12-30 1954-05-25 Bell Telephone Labor Inc Production of single crystals of germanium
BE500569A (en:Method) * 1950-01-13
NL87381C (en:Method) * 1950-03-31
NL88324C (en:Method) * 1950-06-15
US2730470A (en) * 1950-06-15 1956-01-10 Bell Telephone Labor Inc Method of making semi-conductor crystals
US2708646A (en) * 1951-05-09 1955-05-17 Hughes Aircraft Co Methods of making germanium alloy semiconductors
US2859140A (en) * 1951-07-16 1958-11-04 Sylvania Electric Prod Method of introducing impurities into a semi-conductor
US2788298A (en) * 1951-11-02 1957-04-09 Sylvania Electric Prod Methods of growing crystals and making electrical translators
US2674638A (en) * 1952-03-12 1954-04-06 Lindberg Eng Co Induction metal melting furnace
US2766105A (en) * 1952-05-09 1956-10-09 Washken Edward Method of growing nepheline crystals
DE1037594B (de) * 1953-02-06 1958-08-28 Siemens Ag Verfahren zur Herstellung von Formkoerpern aus Germanium oder Silizium
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2823102A (en) * 1954-02-10 1958-02-11 Clevite Corp Method for producing single crystals of silicon
NL192903A (en:Method) * 1954-03-05
DE1215649B (de) * 1954-06-30 1966-05-05 Siemens Ag Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
US2773745A (en) * 1954-07-20 1956-12-11 Du Pont Process for the production of pure silicon in a coarse crystalline form
US2873303A (en) * 1954-11-01 1959-02-10 Philips Corp Photovoltaic device
US2754178A (en) * 1954-12-06 1956-07-10 Lindberg Eng Co Method and apparatus for oxidizing hydrocarbons
AT207857B (de) * 1955-01-14 Degussa Verfahren zur Herstellung von Blausäure durch Umsetzung von Kohlenwasserstoffen mit Ammoniak im Katalysatorbett
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
BE548227A (en:Method) * 1955-07-22
NL219242A (en:Method) * 1956-09-28 1900-01-01
US2975036A (en) * 1956-10-05 1961-03-14 Motorola Inc Crystal pulling apparatus
US3012865A (en) * 1957-11-25 1961-12-12 Du Pont Silicon purification process
US2987383A (en) * 1957-12-02 1961-06-06 United States Borax Chem Purification of elemental boron
US2992080A (en) * 1958-07-25 1961-07-11 Gen Electric Method of improving the purity of silicon
US2945756A (en) * 1959-04-20 1960-07-19 James S Ballantine Electric arc resistance furnace and method of melting refractory materials
DE1221203B (de) * 1963-07-05 1966-07-21 Euratom Ofen fuer die Herstellung und Rueckgewinnung von Kernbrennstoffcarbiden
US3275415A (en) * 1964-02-27 1966-09-27 Westinghouse Electric Corp Apparatus for and preparation of silicon carbide single crystals
BE684801A (en:Method) * 1965-08-05 1967-01-03
GB1439496A (en) * 1973-08-30 1976-06-16 Standard Telephones Cables Ltd Glass preparation
US3933981A (en) * 1973-11-30 1976-01-20 Texas Instruments Incorporated Tin-lead purification of silicon
DE2508803C3 (de) * 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
US4256681A (en) * 1976-12-16 1981-03-17 Semix Incorporated Method of producing semicrystalline silicon
US4218418A (en) * 1978-06-22 1980-08-19 Crystal Systems, Inc. Processes of casting an ingot and making a silica container
US4330582A (en) 1978-11-13 1982-05-18 Semix Incorporated Semicrystalline silicon products
US4745620A (en) * 1986-04-04 1988-05-17 Inductotherm Corporation Apparatus and method for maintaining constant molten metal level in metal casting
DE3627624A1 (de) * 1986-08-14 1988-02-18 Bayer Ag Verfahren zur herstellung von kohlenstoffarmem silicium
US5082635A (en) * 1989-02-28 1992-01-21 Kabushiki Kaisha Kobe Seiko Sho High-pressure crystallographic observation apparatus
FR2707619B1 (fr) * 1993-07-01 1995-09-01 Pechiney Electrometallurgie Silicium métallurgique contenant du phosphore et destiné à la préparation des alkyl ou aryl halogénosilanes.
US5679151A (en) * 1995-03-16 1997-10-21 Kabushiki Kaisha Kobe Seiko Sho Method for growing single crystal
KR0176328B1 (ko) * 1995-12-19 1999-03-20 김은영 축방향 자기장을 인가할 수 있는 수직온도 구배냉각 및 수직브릿지만 화합물 반도체 단결정 성장장치
GB2438838A (en) * 2006-06-08 2007-12-12 Patricia Lebre Alireza Miniature High Pressure Cell for Sample Characterization.
CN118431465A (zh) * 2023-01-31 2024-08-02 比亚迪股份有限公司 硅-碳负极材料及其制备方法、负极电极和电化学装置

Also Published As

Publication number Publication date
US2402582A (en) 1946-06-25
FR957542A (en:Method) 1950-02-23
GB590458A (en) 1947-07-18

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