NL109086C - - Google Patents
Info
- Publication number
- NL109086C NL109086C NL109086DA NL109086C NL 109086 C NL109086 C NL 109086C NL 109086D A NL109086D A NL 109086DA NL 109086 C NL109086 C NL 109086C
- Authority
- NL
- Netherlands
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
- C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
- C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
- C30B9/12—Salt solvents, e.g. flux growth
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| HUEE000425 | 1956-09-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL109086C true NL109086C (en:Method) | 1900-01-01 |
Family
ID=10995120
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL219242D NL219242A (en:Method) | 1956-09-28 | ||
| NL109086D NL109086C (en:Method) | 1956-09-28 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL219242D NL219242A (en:Method) | 1956-09-28 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US2990372A (en:Method) |
| CH (1) | CH367157A (en:Method) |
| DE (1) | DE1154276B (en:Method) |
| GB (1) | GB874547A (en:Method) |
| NL (2) | NL109086C (en:Method) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL260209A (en:Method) * | 1960-01-22 | |||
| US3394994A (en) * | 1966-04-26 | 1968-07-30 | Westinghouse Electric Corp | Method of varying the thickness of dendrites by addition of an impurity which controls growith in the <111> direction |
| US4195067A (en) * | 1977-11-21 | 1980-03-25 | Union Carbide Corporation | Process for the production of refined metallurgical silicon |
| EP0002135B1 (en) * | 1977-11-21 | 1982-11-03 | Union Carbide Corporation | Improved refined metallurgical silicon and process for the production thereof |
| US4193974A (en) * | 1977-11-21 | 1980-03-18 | Union Carbide Corporation | Process for producing refined metallurgical silicon ribbon |
| US4193975A (en) * | 1977-11-21 | 1980-03-18 | Union Carbide Corporation | Process for the production of improved refined metallurgical silicon |
| US4270973A (en) * | 1978-04-27 | 1981-06-02 | Honeywell Inc. | Growth of thallium-doped silicon from a tin-thallium solution |
| US4246249A (en) * | 1979-05-24 | 1981-01-20 | Aluminum Company Of America | Silicon purification process |
| US4312848A (en) * | 1979-05-24 | 1982-01-26 | Aluminum Company Of America | Boron removal in silicon purification |
| US4312847A (en) * | 1979-05-24 | 1982-01-26 | Aluminum Company Of America | Silicon purification system |
| US4256717A (en) * | 1979-05-24 | 1981-03-17 | Aluminum Company Of America | Silicon purification method |
| US4312846A (en) * | 1979-05-24 | 1982-01-26 | Aluminum Company Of America | Method of silicon purification |
| DE2933164A1 (de) * | 1979-08-16 | 1981-02-26 | Consortium Elektrochem Ind | Verfahren zum reinigen von rohsilicium |
| US4312849A (en) * | 1980-09-09 | 1982-01-26 | Aluminum Company Of America | Phosphorous removal in silicon purification |
| US5314571A (en) * | 1992-05-13 | 1994-05-24 | Midwest Research Institute | Crystallization from high temperature solutions of Si in copper |
| DE10358452B4 (de) * | 2003-12-13 | 2005-09-15 | Fiolitakis, Emmanuel, Dr. | Verfahren zur Herstellung von hochreinem Silicium über die Calciumsilicid-Route |
| WO2007112592A1 (en) * | 2006-04-04 | 2007-10-11 | 6N Silicon Inc. | Method for purifying silicon |
| JP5562846B2 (ja) * | 2007-07-23 | 2014-07-30 | シリコア マテリアルズ インコーポレイテッド | 精製シリコン結晶を提供する酸洗使用 |
| CN104313679A (zh) | 2007-10-03 | 2015-01-28 | 希里科材料公司 | 用于处理硅粉末来获得硅晶体的方法 |
| US8501139B2 (en) * | 2009-02-26 | 2013-08-06 | Uri Cohen | Floating Si and/or Ge foils |
| US8603242B2 (en) * | 2009-02-26 | 2013-12-10 | Uri Cohen | Floating semiconductor foils |
| US8562932B2 (en) * | 2009-08-21 | 2013-10-22 | Silicor Materials Inc. | Method of purifying silicon utilizing cascading process |
| AU2019437422B2 (en) * | 2019-03-27 | 2022-02-03 | Wacker Chemie Ag | Method for producing technical silicon |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR957542A (en:Method) * | 1941-04-04 | 1950-02-23 | ||
| US2469418A (en) * | 1946-06-19 | 1949-05-10 | Tennessee Valley Authority | Producing silicon |
| US2747971A (en) * | 1953-07-20 | 1956-05-29 | Westinghouse Electric Corp | Preparation of pure crystalline silicon |
| US2885364A (en) * | 1955-05-31 | 1959-05-05 | Columbia Broadcasting Syst Inc | Method of treating semiconducting materials for electrical devices |
| US2866701A (en) * | 1956-05-10 | 1958-12-30 | Vanadium Corp Of America | Method of purifying silicon and ferrosilicon |
-
0
- NL NL219242D patent/NL219242A/xx unknown
- NL NL109086D patent/NL109086C/xx active
-
1957
- 1957-04-30 DE DEE14064A patent/DE1154276B/de active Pending
- 1957-09-02 CH CH5004357A patent/CH367157A/de unknown
- 1957-09-24 US US685822A patent/US2990372A/en not_active Expired - Lifetime
- 1957-09-25 GB GB30086/57A patent/GB874547A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL219242A (en:Method) | 1900-01-01 |
| DE1154276B (de) | 1963-09-12 |
| US2990372A (en) | 1961-06-27 |
| GB874547A (en) | 1961-08-10 |
| CH367157A (de) | 1963-02-15 |