BE536150A - - Google Patents

Info

Publication number
BE536150A
BE536150A BE536150DA BE536150A BE 536150 A BE536150 A BE 536150A BE 536150D A BE536150D A BE 536150DA BE 536150 A BE536150 A BE 536150A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE536150A publication Critical patent/BE536150A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/58Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861Diodes
    • H01L29/868PIN diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Rectifiers (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BE536150D 1954-03-05 BE536150A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US41427554A 1954-03-05 1954-03-05
US491908A US2811682A (en) 1954-03-05 1955-03-03 Silicon power rectifier

Publications (1)

Publication Number Publication Date
BE536150A true BE536150A (de)

Family

ID=27022485

Family Applications (1)

Application Number Title Priority Date Filing Date
BE536150D BE536150A (de) 1954-03-05

Country Status (7)

Country Link
US (1) US2811682A (de)
BE (1) BE536150A (de)
CH (1) CH337583A (de)
DE (1) DE1033786B (de)
FR (1) FR1115845A (de)
GB (1) GB782664A (de)
NL (2) NL193595A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL224458A (de) * 1956-05-15
BE557842A (de) * 1956-06-01
NL224227A (de) * 1957-01-29
FR1192082A (fr) * 1957-03-20 1959-10-23 Bosch Gmbh Robert Semi-conducteur de puissance
US3051878A (en) * 1957-05-02 1962-08-28 Sarkes Tarzian Semiconductor devices and method of manufacturing them
US2962394A (en) * 1957-06-20 1960-11-29 Motorola Inc Process for plating a silicon base semiconductive unit with nickel
US2943268A (en) * 1957-07-30 1960-06-28 Texaco Inc Automatic gain control amplifier circuit
FR1214352A (fr) * 1957-12-23 1960-04-08 Hughes Aircraft Co Dispositif semi-conducteur et procédé pour le fabriquer
US3007092A (en) * 1957-12-23 1961-10-31 Hughes Aircraft Co Semiconductor devices
DE1104075B (de) * 1958-05-14 1961-04-06 Telefunken Gmbh Halbleitergleichrichter, insbesondere Hochfrequenzgleichrichter, mit einer n np- bzw. p pn-Folge der Halbleiterzonen im Halbleiterkoerper und Verfahren zu seiner Herstellung
NL239515A (de) * 1958-06-18
US3021595A (en) * 1958-07-02 1962-02-20 Texas Instruments Inc Ohmic contacts for silicon conductor devices and method for making
US2937963A (en) * 1958-07-14 1960-05-24 Int Rectifier Corp Temperature compensating zener diode construction
US3116442A (en) * 1959-07-27 1963-12-31 Link Belt Co Silicon rectifier assembly comprising a heat conductive mounting base
DE1208412B (de) * 1959-11-13 1966-01-05 Siemens Ag Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL84061C (de) * 1948-06-26
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device
BE506280A (de) * 1950-10-10
BE525428A (de) * 1952-12-30

Also Published As

Publication number Publication date
US2811682A (en) 1957-10-29
FR1115845A (fr) 1956-04-30
DE1033786B (de) 1958-07-10
GB782664A (en) 1957-09-11
NL99247C (de)
NL193595A (de)
CH337583A (fr) 1959-04-15

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