BE527524A - - Google Patents
Info
- Publication number
- BE527524A BE527524A BE527524DA BE527524A BE 527524 A BE527524 A BE 527524A BE 527524D A BE527524D A BE 527524DA BE 527524 A BE527524 A BE 527524A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE285603X | 1949-05-30 | ||
| DE241049X | 1949-10-24 | ||
| DE271049X | 1949-10-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE527524A true BE527524A (es) |
Family
ID=27185807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE527524D BE527524A (es) | 1949-05-30 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US2648805A (es) |
| BE (1) | BE527524A (es) |
| CH (1) | CH285603A (es) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2753496A (en) * | 1950-02-21 | 1956-07-03 | Teszner Stanislas | Complexes of multip electrode semi-conductors |
| US2842723A (en) * | 1952-04-15 | 1958-07-08 | Licentia Gmbh | Controllable asymmetric electrical conductor systems |
| US2773224A (en) * | 1952-12-31 | 1956-12-04 | Sprague Electric Co | Transistor point contact arrangement |
| US2769926A (en) * | 1953-03-09 | 1956-11-06 | Gen Electric | Non-linear resistance device |
| DE1041160B (de) * | 1953-03-09 | 1958-10-16 | Gen Electric | Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper und ohmschen Elektroden an den Endflaechen |
| US2836797A (en) * | 1953-03-23 | 1958-05-27 | Gen Electric | Multi-electrode field controlled germanium devices |
| US2750542A (en) * | 1953-04-02 | 1956-06-12 | Rca Corp | Unipolar semiconductor devices |
| DE1047316B (de) * | 1953-08-12 | 1958-12-24 | Gen Electric | Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper vom einen Leitungstyp und ohmschen Elektroden an den Enden |
| US2984752A (en) * | 1953-08-13 | 1961-05-16 | Rca Corp | Unipolar transistors |
| US2937289A (en) * | 1954-09-03 | 1960-05-17 | Gen Electric | Digital to analogue converter |
| US2987659A (en) * | 1955-02-15 | 1961-06-06 | Teszner Stanislas | Unipolar "field effect" transistor |
| US2915647A (en) * | 1955-07-13 | 1959-12-01 | Bell Telephone Labor Inc | Semiconductive switch and negative resistance |
| NL112053C (es) * | 1956-08-02 | |||
| US2939057A (en) * | 1957-05-27 | 1960-05-31 | Teszner Stanislas | Unipolar field-effect transistors |
| US2869055A (en) * | 1957-09-20 | 1959-01-13 | Beckman Instruments Inc | Field effect transistor |
| US3040266A (en) * | 1958-06-16 | 1962-06-19 | Union Carbide Corp | Surface field effect transistor amplifier |
| US2951191A (en) * | 1958-08-26 | 1960-08-30 | Rca Corp | Semiconductor devices |
| US3035186A (en) * | 1959-06-15 | 1962-05-15 | Bell Telephone Labor Inc | Semiconductor switching apparatus |
| US3056879A (en) * | 1960-03-24 | 1962-10-02 | Thermo Craft Electric Corp | Electric heating element for water tanks and method |
| US3130378A (en) * | 1960-05-02 | 1964-04-21 | Texas Instruments Inc | Relaxation oscillator utilizing field-effect device |
| NL274363A (es) * | 1960-05-02 | |||
| US3135926A (en) * | 1960-09-19 | 1964-06-02 | Gen Motors Corp | Composite field effect transistor |
| NL282170A (es) * | 1961-08-17 | |||
| NL290035A (es) * | 1962-03-12 | |||
| GB1012519A (en) * | 1962-08-14 | 1965-12-08 | Texas Instruments Inc | Field-effect transistors |
| US3292058A (en) * | 1963-06-04 | 1966-12-13 | Sperry Rand Corp | Thin film controlled emission amplifier |
| US3351824A (en) * | 1964-04-28 | 1967-11-07 | Northern Electric Co | Constant current device |
| US3366802A (en) * | 1965-04-06 | 1968-01-30 | Fairchild Camera Instr Co | Field effect transistor photosensitive modulator |
| US3436624A (en) * | 1965-06-01 | 1969-04-01 | Ericsson Telefon Ab L M | Semiconductor bi-directional component |
| US3509432A (en) * | 1966-06-15 | 1970-04-28 | Massachusetts Inst Technology | Field effect space-charge-limited solid state thin-film device |
| US3484658A (en) * | 1966-08-25 | 1969-12-16 | Nippon Telegraph & Telephone | Temperature compensated semiconductor resistor |
| US3471755A (en) * | 1967-08-28 | 1969-10-07 | Sprague Electric Co | Distributed variable attenuator network |
| US3562608A (en) * | 1969-03-24 | 1971-02-09 | Westinghouse Electric Corp | Variable integrated coupler |
| US3569798A (en) * | 1969-05-13 | 1971-03-09 | Rca Corp | Double heat sink semiconductor device |
| US3569801A (en) * | 1969-06-02 | 1971-03-09 | Gen Electric | Thin film triodes and method of forming |
| US3680204A (en) * | 1969-12-12 | 1972-08-01 | Massachusetts Inst Technology | Solid state device |
| US3614552A (en) * | 1970-02-16 | 1971-10-19 | Elektonische Bavelemente K Veb | Insulated gate field effect transistors |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1900018A (en) * | 1928-03-28 | 1933-03-07 | Lilienfeld Julius Edgar | Device for controlling electric current |
| US1949383A (en) * | 1930-02-13 | 1934-02-27 | Ind Dev Corp | Electronic device |
| FR802364A (fr) * | 1935-03-09 | 1936-09-03 | Philips Nv | Système d'électrodes à conductibilité dissymétrique |
| BE436972A (es) * | 1938-11-15 | |||
| US2438893A (en) * | 1943-12-29 | 1948-04-06 | Bell Telephone Labor Inc | Translating device |
| US2524033A (en) * | 1948-02-26 | 1950-10-03 | Bell Telephone Labor Inc | Three-electrode circuit element utilizing semiconductive materials |
| US2524035A (en) * | 1948-02-26 | 1950-10-03 | Bell Telphone Lab Inc | Three-electrode circuit element utilizing semiconductive materials |
| NL85857C (es) * | 1948-02-26 | |||
| US2560594A (en) * | 1948-09-24 | 1951-07-17 | Bell Telephone Labor Inc | Semiconductor translator and method of making it |
-
0
- BE BE527524D patent/BE527524A/xx unknown
-
1950
- 1950-05-30 CH CH285603D patent/CH285603A/de unknown
- 1950-10-21 US US191360A patent/US2648805A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US2648805A (en) | 1953-08-11 |
| CH285603A (de) | 1952-09-15 |