BE525823A - - Google Patents

Info

Publication number
BE525823A
BE525823A BE525823DA BE525823A BE 525823 A BE525823 A BE 525823A BE 525823D A BE525823D A BE 525823DA BE 525823 A BE525823 A BE 525823A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE525823A publication Critical patent/BE525823A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
BE525823D 1953-01-21 BE525823A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US33245953 US2735948A (en) 1953-01-21 1953-01-21 Output

Publications (1)

Publication Number Publication Date
BE525823A true BE525823A (ja)

Family

ID=22135677

Family Applications (1)

Application Number Title Priority Date Filing Date
BE525823D BE525823A (ja) 1953-01-21

Country Status (4)

Country Link
US (1) US2735948A (ja)
BE (1) BE525823A (ja)
DE (1) DE975382C (ja)
GB (1) GB770285A (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2976426A (en) * 1953-08-03 1961-03-21 Rca Corp Self-powered semiconductive device
US2998550A (en) * 1954-06-30 1961-08-29 Rca Corp Apparatus for powering a plurality of semi-conducting units from a single radioactive battery
US3036226A (en) * 1958-12-15 1962-05-22 Ibm Negative resistance semiconductor circuit utilizing four-layer transistor
US2846592A (en) * 1955-05-20 1958-08-05 Ibm Temperature compensated semiconductor devices
US2905836A (en) * 1955-07-27 1959-09-22 Rca Corp Semiconductor devices and systems
US2981849A (en) * 1956-01-09 1961-04-25 Itt Semiconductor diode
US2925501A (en) * 1956-01-20 1960-02-16 Texas Instruments Inc Discriminator circuit
US3015763A (en) * 1956-03-08 1962-01-02 Hazeltine Research Inc Signal-translating device
US2967952A (en) * 1956-04-25 1961-01-10 Shockley William Semiconductor shift register
US3162770A (en) * 1957-06-06 1964-12-22 Ibm Transistor structure
NL246349A (ja) * 1958-12-15
GB945742A (ja) * 1959-02-06 Texas Instruments Inc
US3115581A (en) * 1959-05-06 1963-12-24 Texas Instruments Inc Miniature semiconductor integrated circuit
US3040196A (en) * 1959-07-22 1962-06-19 Bell Telephone Labor Inc Semiconductor pulse translating system
NL264275A (ja) * 1960-05-02
US3277310A (en) * 1962-11-13 1966-10-04 Texas Instruments Inc Isolated base four-layer semiconductor system
US3261985A (en) * 1962-12-21 1966-07-19 Gen Electric Cross-current turn-off silicon controlled rectifier
US3307049A (en) * 1963-12-20 1967-02-28 Siemens Ag Turnoff-controllable thyristor and method of its operation
USRE28703E (en) * 1966-04-14 1976-02-03 U.S. Philips Corporation Method of manufacturing a semiconductor device
NL149638B (nl) * 1966-04-14 1976-05-17 Philips Nv Werkwijze voor het vervaardigen van een halfgeleiderinrichting bevattende ten minste een veldeffecttransistor, en halfgeleiderinrichting, vervaardigd volgens deze werkwijze.
NL6604962A (ja) * 1966-04-14 1967-10-16
US3431150A (en) * 1966-10-07 1969-03-04 Us Air Force Process for implanting grids in semiconductor devices
US3457632A (en) * 1966-10-07 1969-07-29 Us Air Force Process for implanting buried layers in semiconductor devices
US3472712A (en) * 1966-10-27 1969-10-14 Hughes Aircraft Co Field-effect device with insulated gate
US3514844A (en) * 1967-12-26 1970-06-02 Hughes Aircraft Co Method of making field-effect device with insulated gate
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
BE489418A (ja) * 1948-06-26
DE833366C (de) * 1949-04-14 1952-06-30 Siemens & Halske A G Halbleiterverstaerker

Also Published As

Publication number Publication date
US2735948A (en) 1956-02-21
GB770285A (en) 1957-03-20
DE975382C (de) 1961-11-16

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