NL6604962A - - Google Patents

Info

Publication number
NL6604962A
NL6604962A NL6604962A NL6604962A NL6604962A NL 6604962 A NL6604962 A NL 6604962A NL 6604962 A NL6604962 A NL 6604962A NL 6604962 A NL6604962 A NL 6604962A NL 6604962 A NL6604962 A NL 6604962A
Authority
NL
Netherlands
Application number
NL6604962A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6604962A priority Critical patent/NL6604962A/xx
Priority to GB06564/67A priority patent/GB1188797A/en
Priority to US630012A priority patent/US3481031A/en
Priority to DE19671614234 priority patent/DE1614234A1/de
Priority to FR102838A priority patent/FR1528710A/fr
Publication of NL6604962A publication Critical patent/NL6604962A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/443—Deposition of conductive or insulating materials for electrodes from a gas or vapour, e.g. condensation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making
    • Y10T29/49099—Coating resistive material on a base

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
NL6604962A 1966-04-14 1966-04-14 NL6604962A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NL6604962A NL6604962A (ja) 1966-04-14 1966-04-14
GB06564/67A GB1188797A (en) 1966-04-14 1967-04-11 Semiconductor Manufacture.
US630012A US3481031A (en) 1966-04-14 1967-04-11 Method of providing at least two juxtaposed contacts on a semiconductor body
DE19671614234 DE1614234A1 (de) 1966-04-14 1967-04-11 Verfahren zum Anbringen von mindestens zwei nebeneinanderliegenden Kontakten auf einem Halbleiterkoerper und durch Anwendung dieses Verfahrens hergestellte Halbleitervorrichtung
FR102838A FR1528710A (fr) 1966-04-14 1967-04-14 Procédé d'application de contacts sur un corps semiconducteur et dispositif à cet effet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6604962A NL6604962A (ja) 1966-04-14 1966-04-14

Publications (1)

Publication Number Publication Date
NL6604962A true NL6604962A (ja) 1967-10-16

Family

ID=19796280

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6604962A NL6604962A (ja) 1966-04-14 1966-04-14

Country Status (4)

Country Link
US (1) US3481031A (ja)
DE (1) DE1614234A1 (ja)
GB (1) GB1188797A (ja)
NL (1) NL6604962A (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1233545A (ja) * 1967-08-18 1971-05-26
GB1244225A (en) * 1968-12-31 1971-08-25 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices
US4127931A (en) * 1974-10-04 1978-12-05 Nippon Electric Co., Ltd. Semiconductor device
US4144101A (en) * 1978-06-05 1979-03-13 International Business Machines Corporation Process for providing self-aligned doping regions by ion-implantation and lift-off
GB2027556B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Manufacturing infra-red detectors
GB2027986B (en) * 1978-07-31 1983-01-19 Philips Electronic Associated Infra-red detectors
JPS5812365A (ja) * 1981-07-15 1983-01-24 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタ及びその製造方法
US4404731A (en) * 1981-10-01 1983-09-20 Xerox Corporation Method of forming a thin film transistor
JPS58170067A (ja) * 1982-03-31 1983-10-06 Fujitsu Ltd 薄膜トランジスタの製造方法
JP3478012B2 (ja) * 1995-09-29 2003-12-10 ソニー株式会社 薄膜半導体装置の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
US2588254A (en) * 1950-05-09 1952-03-04 Purdue Research Foundation Photoelectric and thermoelectric device utilizing semiconducting material
BE525823A (ja) * 1953-01-21
US2787564A (en) * 1954-10-28 1957-04-02 Bell Telephone Labor Inc Forming semiconductive devices by ionic bombardment
US2989385A (en) * 1957-05-14 1961-06-20 Bell Telephone Labor Inc Process for ion bombarding and etching metal
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors

Also Published As

Publication number Publication date
DE1614234A1 (de) 1970-08-27
GB1188797A (en) 1970-04-22
US3481031A (en) 1969-12-02

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