BE523990A - - Google Patents

Info

Publication number
BE523990A
BE523990A BE523990DA BE523990A BE 523990 A BE523990 A BE 523990A BE 523990D A BE523990D A BE 523990DA BE 523990 A BE523990 A BE 523990A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE523990A publication Critical patent/BE523990A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34DC amplifiers in which all stages are DC-coupled
    • H03F3/343DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688Integrated circuits having a three-dimensional layout
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
BE523990D 1952-11-05 BE523990A (US08092553-20120110-C00004.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL318329X 1952-11-05

Publications (1)

Publication Number Publication Date
BE523990A true BE523990A (US08092553-20120110-C00004.png)

Family

ID=19783883

Family Applications (1)

Application Number Title Priority Date Filing Date
BE523990D BE523990A (US08092553-20120110-C00004.png) 1952-11-05

Country Status (6)

Country Link
BE (1) BE523990A (US08092553-20120110-C00004.png)
CH (1) CH318329A (US08092553-20120110-C00004.png)
DE (1) DE969211C (US08092553-20120110-C00004.png)
FR (1) FR1086214A (US08092553-20120110-C00004.png)
GB (1) GB747695A (US08092553-20120110-C00004.png)
NL (1) NL173581B (US08092553-20120110-C00004.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3162770A (en) * 1957-06-06 1964-12-22 Ibm Transistor structure

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1079212B (de) * 1958-06-30 1960-04-07 Siemens Ag Halbleiteranordnung mit teilweise negativer Stromspannungscharakteristik, insbesondere Schaltdiode
NL260007A (US08092553-20120110-C00004.png) * 1960-01-14
US3160828A (en) * 1960-01-25 1964-12-08 Westinghouse Electric Corp Radiation sensitive semiconductor oscillating device
DE1207509B (de) * 1962-05-02 1965-12-23 Siemens Ag Gesteuertes Halbleiterstromtor mit mehreren Zonen
GB1098979A (en) * 1965-07-03 1968-01-10 Marconi Co Ltd Improvements in or relating to high frequency transistor amplifiers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3162770A (en) * 1957-06-06 1964-12-22 Ibm Transistor structure

Also Published As

Publication number Publication date
FR1086214A (fr) 1955-02-10
GB747695A (en) 1956-04-11
NL173581B (nl)
CH318329A (de) 1956-12-31
DE969211C (de) 1958-05-14

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