BE520777A - - Google Patents

Info

Publication number
BE520777A
BE520777A BE520777DA BE520777A BE 520777 A BE520777 A BE 520777A BE 520777D A BE520777D A BE 520777DA BE 520777 A BE520777 A BE 520777A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE520777A publication Critical patent/BE520777A/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1203Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1231Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03CMODULATION
    • H03C1/00Amplitude modulation
    • H03C1/36Amplitude modulation by means of semiconductor device having at least three electrodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03CMODULATION
    • H03C5/00Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03DDEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42Modifications of amplifiers to extend the bandwidth
    • H03F1/48Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/051Etching
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/145Shaped junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
BE520777D 1952-06-19 BE520777A (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US294298A US2695930A (en) 1952-06-19 1952-06-19 High-frequency transistor circuit

Publications (1)

Publication Number Publication Date
BE520777A true BE520777A (it)

Family

ID=23132797

Family Applications (1)

Application Number Title Priority Date Filing Date
BE520777D BE520777A (it) 1952-06-19

Country Status (6)

Country Link
US (1) US2695930A (it)
BE (1) BE520777A (it)
CH (1) CH319749A (it)
FR (1) FR1066306A (it)
GB (1) GB748414A (it)
NL (1) NL93080C (it)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1092130B (de) * 1955-12-29 1960-11-03 Honeywell Regulator Co Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2862184A (en) * 1958-11-25 Semiconductor translating device
US2901554A (en) * 1953-01-19 1959-08-25 Gen Electric Semiconductor device and apparatus
US2982918A (en) * 1953-11-09 1961-05-02 Philips Corp Amplifying-circuit arrangement
US2886748A (en) * 1954-03-15 1959-05-12 Rca Corp Semiconductor devices
GB810946A (en) * 1954-03-26 1959-03-25 Philco Corp Electrolytic shaping of semiconductive bodies
US2976433A (en) * 1954-05-26 1961-03-21 Rca Corp Radioactive battery employing semiconductors
US2932748A (en) * 1954-07-26 1960-04-12 Rca Corp Semiconductor devices
US2867763A (en) * 1954-08-03 1959-01-06 Siemens Ag System for controlling or regulating an electric motor by pulses of variable pulsing ratio
NL199921A (it) * 1954-08-27
US2893929A (en) * 1955-08-03 1959-07-07 Philco Corp Method for electroplating selected regions of n-type semiconductive bodies
US2889417A (en) * 1956-01-26 1959-06-02 Honeywell Regulator Co Tetrode transistor bias circuit
DE1041165B (de) * 1956-06-14 1958-10-16 Siemens Ag Fadenhalbleiteranordnung mit zwei sperrfreien Basisanschluessen an den Fadenenden
US3035183A (en) * 1956-06-14 1962-05-15 Siemens And Halske Ag Berlin A Monostable, bistable double base diode circuit utilizing hall effect to perform switching function
US2907897A (en) * 1956-07-09 1959-10-06 Howard H Sander Pressure transducer
US3048797A (en) * 1957-04-30 1962-08-07 Rca Corp Semiconductor modulator
US2943269A (en) * 1957-07-08 1960-06-28 Sylvania Electric Prod Semiconductor switching device
US3086126A (en) * 1957-09-16 1963-04-16 Bendix Corp Semiconductor switching circuit
BE553769A (it) * 1957-11-29
DE1071232B (de) * 1957-12-23 1959-12-17 Radio Corporation of America New York, N. Y. (V. St. A.) Verfahren zur Herstellung einer Halbleiteranordnung mit einem Halbleiterkörper mit mindestens zwei Elektroden
US2963411A (en) * 1957-12-24 1960-12-06 Ibm Process for removing shorts from p-n junctions
DE1115643B (de) * 1958-05-09 1961-10-19 Reich Robert W Zeithaltendes elektrisches Geraet, insbesondere elektrische Uhr
US3096262A (en) * 1958-10-23 1963-07-02 Shockley William Method of making thin slices of semiconductive material
DE1104617B (de) * 1959-06-18 1961-04-13 Siemens Ag Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial
US3050698A (en) * 1960-02-12 1962-08-21 Bell Telephone Labor Inc Semiconductor hall effect devices
US3066259A (en) * 1961-01-03 1962-11-27 Gen Dynamics Corp Suppressed carrier transmitter
US3293541A (en) * 1964-04-02 1966-12-20 North American Aviation Inc Magnetic sensing device
US3671793A (en) * 1969-09-16 1972-06-20 Itt High frequency transistor structure having an impedance transforming network incorporated on the semiconductor chip
US3693056A (en) * 1971-01-29 1972-09-19 Siemens Ag Method for amplification of high-frequency electrical signals in a transistor
US3939366A (en) * 1971-02-19 1976-02-17 Agency Of Industrial Science & Technology Method of converting radioactive energy to electric energy and device for performing the same
JPS5228842A (en) * 1975-08-29 1977-03-04 Nippon Gakki Seizo Kk Small signal amplification circuit
EP0018556B1 (de) * 1979-05-02 1984-08-08 International Business Machines Corporation Anordnung und Verfahren zum selektiven, elektrochemischen Ätzen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2563503A (en) * 1951-08-07 Transistor
US2569347A (en) * 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
NL147218C (it) * 1948-08-14
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
NL79529C (it) * 1948-09-24
US2560594A (en) * 1948-09-24 1951-07-17 Bell Telephone Labor Inc Semiconductor translator and method of making it
US2553491A (en) * 1950-04-27 1951-05-15 Bell Telephone Labor Inc Acoustic transducer utilizing semiconductors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1092130B (de) * 1955-12-29 1960-11-03 Honeywell Regulator Co Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper

Also Published As

Publication number Publication date
CH319749A (de) 1957-02-28
US2695930A (en) 1954-11-30
GB748414A (en) 1956-05-02
FR1066306A (fr) 1954-06-03
NL93080C (it)

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