BE520777A - - Google Patents
Info
- Publication number
 - BE520777A BE520777A BE520777DA BE520777A BE 520777 A BE520777 A BE 520777A BE 520777D A BE520777D A BE 520777DA BE 520777 A BE520777 A BE 520777A
 - Authority
 - BE
 - Belgium
 
Links
Classifications
- 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03F—AMPLIFIERS
 - H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
 - H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
 - H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions
 
 - 
        
- H—ELECTRICITY
 - H01—ELECTRIC ELEMENTS
 - H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
 - H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
 - H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
 - H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
 - H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
 - H03B5/1203—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier being a single transistor
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
 - H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
 - H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
 - H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
 - H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03C—MODULATION
 - H03C1/00—Amplitude modulation
 - H03C1/36—Amplitude modulation by means of semiconductor device having at least three electrodes
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03C—MODULATION
 - H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
 - H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
 - H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03F—AMPLIFIERS
 - H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
 - H03F1/42—Modifications of amplifiers to extend the bandwidth
 - H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
 
 - 
        
- H—ELECTRICITY
 - H03—ELECTRONIC CIRCUITRY
 - H03F—AMPLIFIERS
 - H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
 - H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
 
 - 
        
- H—ELECTRICITY
 - H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
 - H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
 - H10D99/00—Subject matter not provided for in other groups of this subclass
 
 - 
        
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
 - Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
 - Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
 - Y10S148/00—Metal treatment
 - Y10S148/051—Etching
 
 - 
        
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
 - Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
 - Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
 - Y10S148/00—Metal treatment
 - Y10S148/145—Shaped junctions
 
 
Landscapes
- Engineering & Computer Science (AREA)
 - Power Engineering (AREA)
 - Physics & Mathematics (AREA)
 - Condensed Matter Physics & Semiconductors (AREA)
 - General Physics & Mathematics (AREA)
 - Manufacturing & Machinery (AREA)
 - Computer Hardware Design (AREA)
 - Microelectronics & Electronic Packaging (AREA)
 - Bipolar Transistors (AREA)
 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| US294298A US2695930A (en) | 1952-06-19 | 1952-06-19 | High-frequency transistor circuit | 
Publications (1)
| Publication Number | Publication Date | 
|---|---|
| BE520777A true BE520777A (en, 2012) | 
Family
ID=23132797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| BE520777D BE520777A (en, 2012) | 1952-06-19 | 
Country Status (6)
| Country | Link | 
|---|---|
| US (1) | US2695930A (en, 2012) | 
| BE (1) | BE520777A (en, 2012) | 
| CH (1) | CH319749A (en, 2012) | 
| FR (1) | FR1066306A (en, 2012) | 
| GB (1) | GB748414A (en, 2012) | 
| NL (1) | NL93080C (en, 2012) | 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| DE1092130B (de) * | 1955-12-29 | 1960-11-03 | Honeywell Regulator Co | Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper | 
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US2862184A (en) * | 1958-11-25 | Semiconductor translating device | ||
| US2901554A (en) * | 1953-01-19 | 1959-08-25 | Gen Electric | Semiconductor device and apparatus | 
| US2982918A (en) * | 1953-11-09 | 1961-05-02 | Philips Corp | Amplifying-circuit arrangement | 
| US2886748A (en) * | 1954-03-15 | 1959-05-12 | Rca Corp | Semiconductor devices | 
| GB810946A (en) * | 1954-03-26 | 1959-03-25 | Philco Corp | Electrolytic shaping of semiconductive bodies | 
| US2976433A (en) * | 1954-05-26 | 1961-03-21 | Rca Corp | Radioactive battery employing semiconductors | 
| US2932748A (en) * | 1954-07-26 | 1960-04-12 | Rca Corp | Semiconductor devices | 
| US2867763A (en) * | 1954-08-03 | 1959-01-06 | Siemens Ag | System for controlling or regulating an electric motor by pulses of variable pulsing ratio | 
| NL199921A (en, 2012) * | 1954-08-27 | |||
| US2893929A (en) * | 1955-08-03 | 1959-07-07 | Philco Corp | Method for electroplating selected regions of n-type semiconductive bodies | 
| US2889417A (en) * | 1956-01-26 | 1959-06-02 | Honeywell Regulator Co | Tetrode transistor bias circuit | 
| DE1041165B (de) * | 1956-06-14 | 1958-10-16 | Siemens Ag | Fadenhalbleiteranordnung mit zwei sperrfreien Basisanschluessen an den Fadenenden | 
| US3035183A (en) * | 1956-06-14 | 1962-05-15 | Siemens And Halske Ag Berlin A | Monostable, bistable double base diode circuit utilizing hall effect to perform switching function | 
| US2907897A (en) * | 1956-07-09 | 1959-10-06 | Howard H Sander | Pressure transducer | 
| US3048797A (en) * | 1957-04-30 | 1962-08-07 | Rca Corp | Semiconductor modulator | 
| US2943269A (en) * | 1957-07-08 | 1960-06-28 | Sylvania Electric Prod | Semiconductor switching device | 
| US3086126A (en) * | 1957-09-16 | 1963-04-16 | Bendix Corp | Semiconductor switching circuit | 
| BE553769A (en, 2012) * | 1957-11-29 | |||
| DE1071232B (de) * | 1957-12-23 | 1959-12-17 | Radio Corporation of America New York, N. Y. (V. St. A.) | Verfahren zur Herstellung einer Halbleiteranordnung mit einem Halbleiterkörper mit mindestens zwei Elektroden | 
| US2963411A (en) * | 1957-12-24 | 1960-12-06 | Ibm | Process for removing shorts from p-n junctions | 
| DE1115643B (de) * | 1958-05-09 | 1961-10-19 | Reich Robert W | Zeithaltendes elektrisches Geraet, insbesondere elektrische Uhr | 
| US3096262A (en) * | 1958-10-23 | 1963-07-02 | Shockley William | Method of making thin slices of semiconductive material | 
| DE1104617B (de) * | 1959-06-18 | 1961-04-13 | Siemens Ag | Verfahren zum elektrolytischen AEtzen einer Halbleiteranordnung mit einem Halbleiterkoerper aus im wesentlichen einkristallinem Halbleitermaterial | 
| US3050698A (en) * | 1960-02-12 | 1962-08-21 | Bell Telephone Labor Inc | Semiconductor hall effect devices | 
| US3066259A (en) * | 1961-01-03 | 1962-11-27 | Gen Dynamics Corp | Suppressed carrier transmitter | 
| US3293541A (en) * | 1964-04-02 | 1966-12-20 | North American Aviation Inc | Magnetic sensing device | 
| US3671793A (en) * | 1969-09-16 | 1972-06-20 | Itt | High frequency transistor structure having an impedance transforming network incorporated on the semiconductor chip | 
| US3693056A (en) * | 1971-01-29 | 1972-09-19 | Siemens Ag | Method for amplification of high-frequency electrical signals in a transistor | 
| US3939366A (en) * | 1971-02-19 | 1976-02-17 | Agency Of Industrial Science & Technology | Method of converting radioactive energy to electric energy and device for performing the same | 
| JPS5228845A (en) * | 1975-08-29 | 1977-03-04 | Nippon Gakki Seizo Kk | Negative feedback amplification circuit | 
| DE3068851D1 (en) * | 1979-05-02 | 1984-09-13 | Ibm | Apparatus and process for selective electrochemical etching | 
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| US2563503A (en) * | 1951-08-07 | Transistor | ||
| US2569347A (en) * | 1948-06-26 | 1951-09-25 | Bell Telephone Labor Inc | Circuit element utilizing semiconductive material | 
| NL147218C (en, 2012) * | 1948-08-14 | |||
| US2560594A (en) * | 1948-09-24 | 1951-07-17 | Bell Telephone Labor Inc | Semiconductor translator and method of making it | 
| US2600500A (en) * | 1948-09-24 | 1952-06-17 | Bell Telephone Labor Inc | Semiconductor signal translating device with controlled carrier transit times | 
| NL79529C (en, 2012) * | 1948-09-24 | |||
| US2553491A (en) * | 1950-04-27 | 1951-05-15 | Bell Telephone Labor Inc | Acoustic transducer utilizing semiconductors | 
- 
        0
        
- NL NL93080D patent/NL93080C/xx active
 - BE BE520777D patent/BE520777A/xx unknown
 
 - 
        1952
        
- 1952-06-19 US US294298A patent/US2695930A/en not_active Expired - Lifetime
 - 1952-09-12 FR FR1066306D patent/FR1066306A/fr not_active Expired
 
 - 
        1953
        
- 1953-06-12 GB GB16230/53A patent/GB748414A/en not_active Expired
 - 1953-06-18 CH CH319749D patent/CH319749A/de unknown
 
 
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title | 
|---|---|---|---|---|
| DE1092130B (de) * | 1955-12-29 | 1960-11-03 | Honeywell Regulator Co | Flaechentransistor mit einem plaettchen-foermigen Halbleiterkoerper | 
Also Published As
| Publication number | Publication date | 
|---|---|
| CH319749A (de) | 1957-02-28 | 
| FR1066306A (fr) | 1954-06-03 | 
| GB748414A (en) | 1956-05-02 | 
| NL93080C (en, 2012) | |
| US2695930A (en) | 1954-11-30 |