BE514927A - - Google Patents

Info

Publication number
BE514927A
BE514927A BE514927DA BE514927A BE 514927 A BE514927 A BE 514927A BE 514927D A BE514927D A BE 514927DA BE 514927 A BE514927 A BE 514927A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE514927A publication Critical patent/BE514927A/xx

Links

Classifications

    • H10P14/2923—
    • H10P14/22—
    • H10P14/3411—
    • H10P14/38—
BE514927D 1952-01-22 BE514927A (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE307775X 1952-01-22

Publications (1)

Publication Number Publication Date
BE514927A true BE514927A (OSRAM)

Family

ID=20307566

Family Applications (1)

Application Number Title Priority Date Filing Date
BE514927D BE514927A (OSRAM) 1952-01-22

Country Status (4)

Country Link
BE (1) BE514927A (OSRAM)
CH (1) CH307775A (OSRAM)
FR (1) FR1064045A (OSRAM)
GB (1) GB732797A (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850414A (en) * 1955-06-20 1958-09-02 Enomoto Masamichi Method of making single crystal semiconductor elements
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1227433B (de) * 1955-07-28 1966-10-27 Siemens Ag Verfahren zum Einbau definierter Stoerstellen in Metall- oder Halbleiterschichten
DE1058634B (de) * 1956-06-07 1959-06-04 Ibm Deutschland Gasdiffusionsverfahren zur Herstellung eines Transistors
DE1098316B (de) * 1957-06-26 1961-01-26 Union Carbide Corp Verfahren zum Herstellen einkristalliner UEberzuege aus dotierten Halbleitergrundstoffen durch Aufdampfen im Vakuum
DE1071177B (OSRAM) * 1958-01-17
US3034924A (en) * 1958-10-30 1962-05-15 Balzers Patent Beteilig Ag Use of a rare earth metal in vaporizing metals and metal oxides
US3036933A (en) * 1959-10-06 1962-05-29 Ibm Vacuum evaporation method
US3063871A (en) * 1959-10-23 1962-11-13 Merck & Co Inc Production of semiconductor films
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
US3172778A (en) * 1961-01-03 1965-03-09 Method for producing thin semi- conducting layers of semicon- ductor compounds
FR1317607A (OSRAM) * 1961-03-14 1963-05-08
NL291466A (OSRAM) * 1962-04-13
DE1237076B (de) * 1962-06-19 1967-03-23 Western Electric Co Verfahren zum Herstellen eines epitaxial aufgewachsenen Siliciumfilms auf einer Halbleiterunterlage

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2850414A (en) * 1955-06-20 1958-09-02 Enomoto Masamichi Method of making single crystal semiconductor elements
US2963390A (en) * 1955-09-26 1960-12-06 Hoffman Electronics Corp Method of making a photosensitive semi-conductor device
US2964435A (en) * 1957-03-27 1960-12-13 Mc Graw Edison Co Semiconductor devices and their manufacture

Also Published As

Publication number Publication date
FR1064045A (fr) 1954-05-10
GB732797A (en) 1955-06-29
CH307775A (de) 1955-06-15

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