|
US2768914A
(en)
*
|
1951-06-29 |
1956-10-30 |
Bell Telephone Labor Inc |
Process for producing semiconductive crystals of uniform resistivity
|
|
US2841860A
(en)
*
|
1952-08-08 |
1958-07-08 |
Sylvania Electric Prod |
Semiconductor devices and methods
|
|
DE1061527B
(de)
*
|
1953-02-14 |
1959-07-16 |
Siemens Ag |
Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
|
|
US2854363A
(en)
*
|
1953-04-02 |
1958-09-30 |
Int Standard Electric Corp |
Method of producing semiconductor crystals containing p-n junctions
|
|
US2893847A
(en)
*
|
1954-02-23 |
1959-07-07 |
Siemens Ag |
Apparatus for preparing rod-shaped, crystalline bodies, particularly semiconductor bodies
|
|
US2793103A
(en)
*
|
1954-02-24 |
1957-05-21 |
Siemens Ag |
Method for producing rod-shaped bodies of crystalline material
|
|
DE1044768B
(de)
*
|
1954-03-02 |
1958-11-27 |
Siemens Ag |
Verfahren und Vorrichtung zum Ziehen eines stabfoermigen kristallinen Koerpers, vorzugsweise Halbleiterkoerpers
|
|
US2809136A
(en)
*
|
1954-03-10 |
1957-10-08 |
Sylvania Electric Prod |
Apparatus and method of preparing crystals of silicon germanium group
|
|
NL111118C
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1954-04-01 |
|
|
|
|
US2842467A
(en)
*
|
1954-04-28 |
1958-07-08 |
Ibm |
Method of growing semi-conductors
|
|
US2859141A
(en)
*
|
1954-04-30 |
1958-11-04 |
Raytheon Mfg Co |
Method for making a semiconductor junction
|
|
NL246576A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1954-05-18 |
1900-01-01 |
|
|
|
BE542056A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1954-10-15 |
|
|
|
|
DE1069389B
(de)
*
|
1954-10-28 |
1959-11-19 |
Jean de Gaillard de la Valdene, Palm Beach, Fla. (V. St. A.) |
Verfahren und Vorrichtung zum Züchten von Einkristallen
|
|
US2935385A
(en)
*
|
1955-03-25 |
1960-05-03 |
Texas Instruments Inc |
Apparatus for manufacturing semiconductor materials
|
|
US2839436A
(en)
*
|
1955-04-19 |
1958-06-17 |
Texas Instruments Inc |
Method and apparatus for growing semiconductor crystals
|
|
US2871149A
(en)
*
|
1955-05-02 |
1959-01-27 |
Sprague Electric Co |
Semiconductor method
|
|
US2835614A
(en)
*
|
1955-11-30 |
1958-05-20 |
Raulaud Corp |
Method of manufacturing crystalline material
|
|
BE550586A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1955-12-02 |
|
|
|
|
US2900708A
(en)
*
|
1956-02-16 |
1959-08-25 |
Marvalaud Inc |
Apparatus for producing alloy and bimetallic filaments
|
|
US2889240A
(en)
*
|
1956-03-01 |
1959-06-02 |
Rca Corp |
Method and apparatus for growing semi-conductive single crystals from a melt
|
|
DE1262472B
(de)
*
|
1956-07-12 |
1968-03-07 |
Siemens Ag |
Verfahren zur Waermebehandlung von hochreinem Halbleitermaterial durch in dem Halbleiter fliessenden Strom
|
|
US2975036A
(en)
*
|
1956-10-05 |
1961-03-14 |
Motorola Inc |
Crystal pulling apparatus
|
|
US2927008A
(en)
*
|
1956-10-29 |
1960-03-01 |
Shockley Transistor Corp |
Crystal growing apparatus
|
|
US2988433A
(en)
*
|
1957-12-31 |
1961-06-13 |
Ibm |
Method of forming crystals
|
|
NL269311A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1960-09-20 |
|
|
|
|
DE1242578B
(de)
*
|
1960-09-29 |
1967-06-22 |
Siemens Ag |
Vorrichtung zum Herstellen von bandfoermigen, dendritisch gewachsenen, hochreinen Halbleiterkristallen
|
|
US3147085A
(en)
*
|
1961-09-14 |
1964-09-01 |
Gen Electric |
Apparatus for growing whiskers
|
|
BE624959A
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1961-11-20 |
|
|
|
|
NL128651C
(GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
*
|
1966-01-26 |
|
|
|
|
US3485289A
(en)
*
|
1966-02-01 |
1969-12-23 |
Mitsubishi Chem Ind |
Method for the manufacture of aluminum or aluminum alloy castings
|
|
US3494804A
(en)
*
|
1968-07-15 |
1970-02-10 |
Air Reduction |
Method for growing crystals
|
|
US3822111A
(en)
*
|
1971-02-25 |
1974-07-02 |
Sony Corp |
Apparatus for pulling up semiconductor crystals
|
|
GB1475261A
(en)
*
|
1975-04-02 |
1977-06-01 |
Nat Res Dev |
Siliceous materials
|
|
US4548879A
(en)
*
|
1984-05-21 |
1985-10-22 |
Rohm And Haas Company |
Solderable polymer thick films
|
|
JPS6131382A
(ja)
*
|
1984-07-20 |
1986-02-13 |
Sumitomo Electric Ind Ltd |
化合物半導体単結晶の引上方法
|