BE454817A - - Google Patents

Info

Publication number
BE454817A
BE454817A BE454817DA BE454817A BE 454817 A BE454817 A BE 454817A BE 454817D A BE454817D A BE 454817DA BE 454817 A BE454817 A BE 454817A
Authority
BE
Belgium
Prior art keywords
zone
furnace
point
zones
low frequency
Prior art date
Application number
Other languages
English (en)
French (fr)
Publication of BE454817A publication Critical patent/BE454817A/fr

Links

Landscapes

  • Manufacture And Refinement Of Metals (AREA)
  • Furnace Details (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
BE454817D BE454817A (enExample)

Publications (1)

Publication Number Publication Date
BE454817A true BE454817A (enExample)

Family

ID=108888

Family Applications (1)

Application Number Title Priority Date Filing Date
BE454817D BE454817A (enExample)

Country Status (1)

Country Link
BE (1) BE454817A (enExample)

Similar Documents

Publication Publication Date Title
Zhang et al. One-dimensional growth mechanism of crystalline silicon nanowires
US2169893A (en) Cooling means for continuous casting apparatus
CN105598402A (zh) 一种钢连铸结晶器喂包芯线及喂线过程的动态控制方法
Kinoshita et al. Growth of homogeneous mixed crystals of In0. 3Ga0. 7As by the traveling liquidus-zone method
Azuma et al. Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal–melt interface using in situ monitoring system
BE454817A (enExample)
US2135465A (en) Continuous casting of metal shapes
FR2539144A1 (fr) Chenal d'ecoulement de laitier fondu provenant d'un haut fourneau
Usami et al. Floating zone growth of Si-rich SiGe bulk crystal using pre-synthesized SiGe feed rod with uniform composition
Kinoshita et al. Si0. 5Ge0. 5 bulk single crystals with uniform composition
US2295474A (en) Heating-furnace work-carrying skid
Kaya et al. Eutectic growth of unidirectionally solidified bismuth–cadmium alloy
Liu et al. Lamellar orientation control of Ti–47Al–0.5 W–0.5 Si by directional solidification using β seeding technique
WO2002039070A2 (fr) Canne de mesure de niveau d'un bain en fusion
US4545848A (en) HCT Crystal growth method
Liu et al. Tuning anisotropic grain growth and high-temperature deformation in TiAl alloys via directional annealing: role of hot zone migration rate and 3D twin networks
Chevalier et al. Dewetting application to CdTe single crystal growth on earth
DE3714139A1 (de) Stranggiessvorrichtung
RU96100759A (ru) Способ изготовления полуфабрикатов и устройство для его осуществления
Arafune et al. Control of crystal–melt interface shape during horizontal Bridgman growth of InSb crystal using solutal Marangoni convection
Wagner et al. Si1− xGex (x≥ 0.2) crystal growth in the absence of a crucible
Kinoshita et al. Homogeneous Si0. 5Ge0. 5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone method
Yoshioka et al. Microstructural control of bismuth tellurium alloys by solidification with undercooling
Krymov et al. Temperature distribution near the interface in sapphire crystals grown by EFG and GES methods
JPH1150158A (ja) ロール