AU6628994A - Plasma shaping plug for control of sputter etching - Google Patents

Plasma shaping plug for control of sputter etching

Info

Publication number
AU6628994A
AU6628994A AU66289/94A AU6628994A AU6628994A AU 6628994 A AU6628994 A AU 6628994A AU 66289/94 A AU66289/94 A AU 66289/94A AU 6628994 A AU6628994 A AU 6628994A AU 6628994 A AU6628994 A AU 6628994A
Authority
AU
Australia
Prior art keywords
control
sputter etching
shaping plug
plasma shaping
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU66289/94A
Other languages
English (en)
Inventor
Robert Hieronymi
Steven D Hurwitt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Materials Research Corp
Original Assignee
Materials Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Materials Research Corp filed Critical Materials Research Corp
Publication of AU6628994A publication Critical patent/AU6628994A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/347—Thickness uniformity of coated layers or desired profile of target erosion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
AU66289/94A 1993-04-09 1994-04-08 Plasma shaping plug for control of sputter etching Abandoned AU6628994A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US045368 1993-04-09
US08/045,368 US5391281A (en) 1993-04-09 1993-04-09 Plasma shaping plug for control of sputter etching
PCT/US1994/003866 WO1994024692A1 (en) 1993-04-09 1994-04-08 Plasma shaping plug for control of sputter etching

Publications (1)

Publication Number Publication Date
AU6628994A true AU6628994A (en) 1994-11-08

Family

ID=21937490

Family Applications (1)

Application Number Title Priority Date Filing Date
AU66289/94A Abandoned AU6628994A (en) 1993-04-09 1994-04-08 Plasma shaping plug for control of sputter etching

Country Status (9)

Country Link
US (1) US5391281A (enExample)
EP (1) EP0694208B1 (enExample)
JP (1) JP3228750B2 (enExample)
KR (1) KR100318354B1 (enExample)
AU (1) AU6628994A (enExample)
CA (1) CA2159494A1 (enExample)
DE (1) DE69405722T2 (enExample)
TW (1) TW238405B (enExample)
WO (1) WO1994024692A1 (enExample)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH686254A5 (de) * 1992-07-27 1996-02-15 Balzers Hochvakuum Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source
US5716485A (en) * 1995-06-07 1998-02-10 Varian Associates, Inc. Electrode designs for controlling uniformity profiles in plasma processing reactors
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination
JP4654176B2 (ja) * 1996-02-22 2011-03-16 住友精密工業株式会社 誘導結合プラズマ・リアクタ
US5834371A (en) * 1997-01-31 1998-11-10 Tokyo Electron Limited Method and apparatus for preparing and metallizing high aspect ratio silicon semiconductor device contacts to reduce the resistivity thereof
US5989652A (en) * 1997-01-31 1999-11-23 Tokyo Electron Limited Method of low temperature plasma enhanced chemical vapor deposition of tin film over titanium for use in via level applications
US6271121B1 (en) 1997-02-10 2001-08-07 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
US5906866A (en) * 1997-02-10 1999-05-25 Tokyo Electron Limited Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface
JP4714309B2 (ja) 1998-12-11 2011-06-29 サーフィス テクノロジー システムズ ピーエルシー プラズマ加工装置
KR100430583B1 (ko) * 2001-12-20 2004-05-10 동부전자 주식회사 플라즈마 에칭 장비를 이용한 반도체 소자의 프로파일조절 방법
US7183716B2 (en) * 2003-02-04 2007-02-27 Veeco Instruments, Inc. Charged particle source and operation thereof
US7557362B2 (en) * 2004-02-04 2009-07-07 Veeco Instruments Inc. Ion sources and methods for generating an ion beam with a controllable ion current density distribution
US8158016B2 (en) * 2004-02-04 2012-04-17 Veeco Instruments, Inc. Methods of operating an electromagnet of an ion source
US7713432B2 (en) * 2004-10-04 2010-05-11 David Johnson Method and apparatus to improve plasma etch uniformity
US20070068795A1 (en) * 2005-09-26 2007-03-29 Jozef Brcka Hollow body plasma uniformity adjustment device and method
JP5486414B2 (ja) * 2010-06-08 2014-05-07 日本放送協会 プラズマエッチング装置
JP2014209406A (ja) * 2011-07-20 2014-11-06 キヤノンアネルバ株式会社 イオンビーム発生装置、およびイオンビームプラズマ処理装置
JP5774539B2 (ja) * 2012-04-16 2015-09-09 Ｓｐｐテクノロジーズ株式会社 プラズマエッチング方法
JP5840268B1 (ja) 2014-08-25 2016-01-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法および記録媒体
CN115376873A (zh) * 2021-05-18 2022-11-22 江苏鲁汶仪器有限公司 离子源装置及其使用方法和真空处理系统
KR20240016800A (ko) 2022-07-29 2024-02-06 삼성전자주식회사 플라즈마 처리 장치

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1624071A (en) * 1921-07-28 1927-04-12 Westinghouse Lamp Co Method of affixing coatings on incandescent-lamp filaments
US2103623A (en) * 1933-09-20 1937-12-28 Ion Corp Electron discharge device for electronically bombarding materials
US2305758A (en) * 1937-05-25 1942-12-22 Berghaus Bernhard Coating of articles by cathode disintegration
US2257411A (en) * 1937-11-30 1941-09-30 Berghaus Method of cathode disintegration
US2346483A (en) * 1942-08-07 1944-04-11 Gen Electric Chargeproof cover glass
US2463180A (en) * 1943-04-29 1949-03-01 Bell Telephone Labor Inc Method and apparatus for making mosaic targets for electron beams
US2843542A (en) * 1956-02-23 1958-07-15 George F Callahan Method and apparatus for producing improved abrading contours
US3100272A (en) * 1961-04-14 1963-08-06 Gen Mills Inc Low pressure mercury plasma discharge tube
US3233137A (en) * 1961-08-28 1966-02-01 Litton Systems Inc Method and apparatus for cleansing by ionic bombardment
GB1052029A (enExample) * 1962-09-20
US3329601A (en) * 1964-09-15 1967-07-04 Donald M Mattox Apparatus for coating a cathodically biased substrate from plasma of ionized coatingmaterial
US3458426A (en) * 1966-05-25 1969-07-29 Fabri Tek Inc Symmetrical sputtering apparatus with plasma confinement
DE1765850A1 (de) * 1967-11-10 1971-10-28 Euratom Verfahren und Vorrichtung zum Aufbringen von duennen Schichten
US3875028A (en) * 1972-08-30 1975-04-01 Picker Corp Method of manufacture of x-ray tube having focusing cup with non emitting coating
US4111782A (en) * 1974-12-23 1978-09-05 Telic Corporation Sputtering apparatus
US4342901A (en) * 1980-08-11 1982-08-03 Eaton Corporation Plasma etching electrode
JPS58157975A (ja) * 1982-03-10 1983-09-20 Tokyo Ohka Kogyo Co Ltd プラズマエツチング方法
DE3500328A1 (de) * 1985-01-07 1986-07-10 Nihon Shinku Gijutsu K.K., Chigasaki, Kanagawa Zerstaeubungsaetzvorrichtung
DE3521053A1 (de) * 1985-06-12 1986-12-18 Leybold-Heraeus GmbH, 5000 Köln Vorrichtung zum aufbringen duenner schichten auf ein substrat
US4632719A (en) * 1985-09-18 1986-12-30 Varian Associates, Inc. Semiconductor etching apparatus with magnetic array and vertical shield
GB8629634D0 (en) * 1986-12-11 1987-01-21 Dobson C D Reactive ion & sputter etching
EP0343500B1 (en) * 1988-05-23 1994-01-19 Nippon Telegraph And Telephone Corporation Plasma etching apparatus
DE3914065A1 (de) * 1989-04-28 1990-10-31 Leybold Ag Vorrichtung zur durchfuehrung von plasma-aetzverfahren
DE4118973C2 (de) * 1991-06-08 1999-02-04 Fraunhofer Ges Forschung Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung
CH686254A5 (de) * 1992-07-27 1996-02-15 Balzers Hochvakuum Verfahren zur Einstellung der Bearbeitungsratenverteilung sowie Aetz- oder Plasma-CVD-Anlage zu dessen Ausfuehrung.
GB2287403B (en) 1994-02-28 1997-08-27 Benedictis Alfredo De Device and method for treatment of hair

Also Published As

Publication number Publication date
DE69405722T2 (de) 1998-01-08
TW238405B (enExample) 1995-01-11
EP0694208A1 (en) 1996-01-31
EP0694208B1 (en) 1997-09-17
KR960702167A (ko) 1996-03-28
DE69405722D1 (de) 1997-10-23
JP3228750B2 (ja) 2001-11-12
KR100318354B1 (ko) 2002-04-22
US5391281A (en) 1995-02-21
CA2159494A1 (en) 1994-10-27
JPH08508852A (ja) 1996-09-17
WO1994024692A1 (en) 1994-10-27

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