AU607236B2 - A method of synthesizing amorphous group iiia-group va compounds - Google Patents

A method of synthesizing amorphous group iiia-group va compounds Download PDF

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Publication number
AU607236B2
AU607236B2 AU18932/88A AU1893288A AU607236B2 AU 607236 B2 AU607236 B2 AU 607236B2 AU 18932/88 A AU18932/88 A AU 18932/88A AU 1893288 A AU1893288 A AU 1893288A AU 607236 B2 AU607236 B2 AU 607236B2
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AU
Australia
Prior art keywords
group
iiia
halide
mixtures
gallium
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Ceased
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AU18932/88A
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English (en)
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AU1893288A (en
Inventor
Lawrence Daniel David
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International Business Machines Corp
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International Business Machines Corp
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Publication date
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Publication of AU1893288A publication Critical patent/AU1893288A/en
Application granted granted Critical
Publication of AU607236B2 publication Critical patent/AU607236B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/08—Other phosphides
    • C01B25/082—Other phosphides of boron, aluminium, gallium or indium
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/10—Compounds having one or more C—Si linkages containing nitrogen having a Si-N linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/66—Arsenic compounds
    • C07F9/68—Arsenic compounds without As—C bonds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/90—Antimony compounds
    • C07F9/902—Compounds without antimony-carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/007—Preparing arsenides or antimonides, especially of the III-VI-compound type, e.g. aluminium or gallium arsenide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Engineering & Computer Science (AREA)
  • Catalysts (AREA)
AU18932/88A 1987-07-13 1988-07-11 A method of synthesizing amorphous group iiia-group va compounds Ceased AU607236B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/072,486 US4798701A (en) 1987-07-13 1987-07-13 Method of synthesizing amorphous group IIIA-group VA compounds
US072486 1993-06-07

Publications (2)

Publication Number Publication Date
AU1893288A AU1893288A (en) 1989-01-19
AU607236B2 true AU607236B2 (en) 1991-02-28

Family

ID=22107911

Family Applications (1)

Application Number Title Priority Date Filing Date
AU18932/88A Ceased AU607236B2 (en) 1987-07-13 1988-07-11 A method of synthesizing amorphous group iiia-group va compounds

Country Status (7)

Country Link
US (1) US4798701A (OSRAM)
EP (1) EP0299212A3 (OSRAM)
JP (1) JPS6424006A (OSRAM)
AU (1) AU607236B2 (OSRAM)
BR (1) BR8803503A (OSRAM)
CA (1) CA1280873C (OSRAM)
MX (1) MX167380B (OSRAM)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4902486A (en) * 1987-11-03 1990-02-20 Cornell Research Foundation, Inc. Novel gallium arsenide precursor and low temperature method of preparing gallium arsenide therefrom
US4980490A (en) * 1987-11-03 1990-12-25 Cornell Research Foundation, Inc. [R(Cl)GaAs(SiR'3)2 ]n
US5505928A (en) * 1991-11-22 1996-04-09 The Regents Of University Of California Preparation of III-V semiconductor nanocrystals
US5474591A (en) * 1994-01-31 1995-12-12 Duke University Method of synthesizing III-V semiconductor nanocrystals
US6607829B1 (en) 1997-11-13 2003-08-19 Massachusetts Institute Of Technology Tellurium-containing nanocrystalline materials
US6207392B1 (en) * 1997-11-25 2001-03-27 The Regents Of The University Of California Semiconductor nanocrystal probes for biological applications and process for making and using such probes
WO2001033643A1 (en) 1999-10-29 2001-05-10 Ohio University BAND GAP ENGINEERING OF AMORPHOUS Al-Ga-N ALLOYS
WO2001091451A2 (en) 2000-05-23 2001-11-29 Ohio University Amorphous aluminum nitride emitter
JP2005097022A (ja) * 2003-09-22 2005-04-14 Japan Science & Technology Agency Ｉｉｉｂ族窒化物の合成方法
US8134175B2 (en) * 2005-01-11 2012-03-13 Massachusetts Institute Of Technology Nanocrystals including III-V semiconductors
US7641880B2 (en) * 2006-05-03 2010-01-05 Ohio University Room temperature synthesis of GaN nanopowder
US20100242835A1 (en) * 2006-06-09 2010-09-30 S.O.I.T.E.C. Silicon On Insulator Technologies High volume delivery system for gallium trichloride
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008130448A2 (en) 2006-11-22 2008-10-30 S.O.I.Tec Silicon On Insulator Technologies Temperature-controlled purge gate valve for chemical vapor deposition chamber
JP5656184B2 (ja) 2006-11-22 2015-01-21 ソイテック 三塩化ガリウムの噴射方式
WO2008064085A2 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Abatement system for gallium nitride reactor exhaust gases
WO2008064109A2 (en) 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Equipment for high volume manufacture of group iii-v semiconductor materials
EP2083935B1 (en) * 2006-11-22 2012-02-22 S.O.I.TEC Silicon on Insulator Technologies Method for epitaxial deposition of a monocrystalline Group III-V semiconductor material
WO2008064080A1 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies High volume delivery system for gallium trichloride
US9481943B2 (en) 2006-11-22 2016-11-01 Soitec Gallium trichloride injection scheme
US9481944B2 (en) 2006-11-22 2016-11-01 Soitec Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same
WO2008064077A2 (en) * 2006-11-22 2008-05-29 S.O.I.Tec Silicon On Insulator Technologies Methods for high volume manufacture of group iii-v semiconductor materials
KR20100108359A (ko) * 2007-12-20 2010-10-06 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 반도체 물질의 대량 생산용 인시튜 챔버 세정 프로세스를 위한 방법
FR2969137B1 (fr) * 2010-12-17 2015-01-02 Centre Nat Rech Scient Procede de preparation d'une composition de particules mixtes contenant des elements des colonnes 13 et 15

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141778A (en) * 1976-02-12 1979-02-27 Domrachev Georgy A Method of preparing crystalline compounds AIVA BVIA
US4230205A (en) * 1978-05-10 1980-10-28 Westinghouse Electric Corp. Elevator system
US4594264A (en) * 1984-11-20 1986-06-10 Hughes Aircraft Company Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2403646A1 (fr) * 1977-09-16 1979-04-13 Anvar Procede de realisation d'un depot de compose semi-conducteur d'elements iii et v
US4312970A (en) * 1981-02-20 1982-01-26 Dow Corning Corporation Silazane polymers from {R'3 Si}2 NH and organochlorosilanes
US4482669A (en) * 1984-01-19 1984-11-13 Massachusetts Institute Of Technology Preceramic organosilazane polymers
US4611035A (en) * 1984-02-10 1986-09-09 Minnesota Mining And Manufacturing Company Polyhydridosilanes and their conversion to pyropolymers
US4704444A (en) * 1984-02-10 1987-11-03 Minnesota Mining And Manufacturing Company Polyhydridosilanes and their conversion to pyropolymers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141778A (en) * 1976-02-12 1979-02-27 Domrachev Georgy A Method of preparing crystalline compounds AIVA BVIA
US4230205A (en) * 1978-05-10 1980-10-28 Westinghouse Electric Corp. Elevator system
US4594264A (en) * 1984-11-20 1986-06-10 Hughes Aircraft Company Method for forming gallium arsenide from thin solid films of gallium-arsenic complexes

Also Published As

Publication number Publication date
EP0299212A3 (en) 1990-11-07
BR8803503A (pt) 1989-01-31
EP0299212A2 (en) 1989-01-18
MX167380B (es) 1993-03-19
JPS6424006A (en) 1989-01-26
AU1893288A (en) 1989-01-19
US4798701A (en) 1989-01-17
JPH0474282B2 (OSRAM) 1992-11-25
CA1280873C (en) 1991-03-05

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