AU5545794A - Flash memory system, and methods of constructing and utilizing same - Google Patents

Flash memory system, and methods of constructing and utilizing same

Info

Publication number
AU5545794A
AU5545794A AU55457/94A AU5545794A AU5545794A AU 5545794 A AU5545794 A AU 5545794A AU 55457/94 A AU55457/94 A AU 55457/94A AU 5545794 A AU5545794 A AU 5545794A AU 5545794 A AU5545794 A AU 5545794A
Authority
AU
Australia
Prior art keywords
constructing
methods
flash memory
memory system
utilizing same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU55457/94A
Inventor
Ryan T. Hirose
Loren T Lancaster
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NVX Corp
Original Assignee
NVX Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NVX Corp filed Critical NVX Corp
Publication of AU5545794A publication Critical patent/AU5545794A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
AU55457/94A 1992-11-02 1993-11-02 Flash memory system, and methods of constructing and utilizing same Abandoned AU5545794A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US97092192A 1992-11-02 1992-11-02
PCT/US1993/010485 WO1994010686A1 (en) 1992-11-02 1993-11-02 Flash memory system, and methods of constructing and utilizing same
US970921 1997-11-14

Publications (1)

Publication Number Publication Date
AU5545794A true AU5545794A (en) 1994-05-24

Family

ID=25517709

Family Applications (1)

Application Number Title Priority Date Filing Date
AU55457/94A Abandoned AU5545794A (en) 1992-11-02 1993-11-02 Flash memory system, and methods of constructing and utilizing same

Country Status (5)

Country Link
EP (1) EP0667026A4 (en)
JP (1) JPH08507411A (en)
KR (1) KR100354406B1 (en)
AU (1) AU5545794A (en)
WO (1) WO1994010686A1 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5774400A (en) * 1995-12-26 1998-06-30 Nvx Corporation Structure and method to prevent over erasure of nonvolatile memory transistors
US6900085B2 (en) * 2001-06-26 2005-05-31 Advanced Micro Devices, Inc. ESD implant following spacer deposition
JP2004193178A (en) 2002-12-06 2004-07-08 Ｆａｓｌ Ｊａｐａｎ 株式会社 Semiconductor storage device and its manufacturing method
US7184315B2 (en) * 2003-11-04 2007-02-27 Micron Technology, Inc. NROM flash memory with self-aligned structural charge separation
TW200812074A (en) 2006-07-04 2008-03-01 Nxp Bv Non-volatile memory and-array
US7710776B2 (en) 2006-12-27 2010-05-04 Cypress Semiconductor Corporation Method for on chip sensing of SONOS VT window in non-volatile static random access memory
JP5493865B2 (en) * 2007-12-03 2014-05-14 凸版印刷株式会社 Semiconductor device
US7859899B1 (en) 2008-03-28 2010-12-28 Cypress Semiconductor Corporation Non-volatile memory and method of operating the same
US8422317B2 (en) 2009-11-12 2013-04-16 Em Microelectronic-Marin Sa Self-powered detection device with a non-volatile memory
US8422293B2 (en) 2009-11-12 2013-04-16 Em Microelectronic-Marin Sa Self-powered event detection device
US20110110171A1 (en) * 2009-11-12 2011-05-12 Em Microelectronic-Marin Sa Powerless external event detection device
US8411505B2 (en) 2009-11-12 2013-04-02 Em Microelectronic-Marin Sa Self-powered detection device with a non-volatile memory
US9443592B2 (en) * 2013-07-18 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3992701A (en) * 1975-04-10 1976-11-16 International Business Machines Corporation Non-volatile memory cell and array using substrate current
US4017888A (en) * 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
US4611308A (en) * 1978-06-29 1986-09-09 Westinghouse Electric Corp. Drain triggered N-channel non-volatile memory
JPS5530846A (en) * 1978-08-28 1980-03-04 Hitachi Ltd Method for manufacturing fixed memory
DE2923995C2 (en) * 1979-06-13 1985-11-07 Siemens AG, 1000 Berlin und 8000 München Process for the production of integrated MOS circuits with MOS transistors and MNOS memory transistors in silicon gate technology
US4769787A (en) * 1985-07-26 1988-09-06 Hitachi, Ltd. Semiconductor memory device
JPH02126498A (en) * 1988-07-08 1990-05-15 Hitachi Ltd Nonvolatile semiconductor memory device
JPH0227594A (en) * 1988-07-14 1990-01-30 Nec Corp Nonvolatile random access semiconductor memory
JPH03219496A (en) * 1990-01-25 1991-09-26 Hitachi Ltd Nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
EP0667026A4 (en) 1998-10-21
KR950704790A (en) 1995-11-20
KR100354406B1 (en) 2002-12-26
JPH08507411A (en) 1996-08-06
EP0667026A1 (en) 1995-08-16
WO1994010686A1 (en) 1994-05-11

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