AU5411900A - Method for engraving a thin dielectric layer on a silicon substrate and equipment for carrying out said method - Google Patents

Method for engraving a thin dielectric layer on a silicon substrate and equipment for carrying out said method

Info

Publication number
AU5411900A
AU5411900A AU54119/00A AU5411900A AU5411900A AU 5411900 A AU5411900 A AU 5411900A AU 54119/00 A AU54119/00 A AU 54119/00A AU 5411900 A AU5411900 A AU 5411900A AU 5411900 A AU5411900 A AU 5411900A
Authority
AU
Australia
Prior art keywords
engraving
carrying
equipment
dielectric layer
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU54119/00A
Other languages
English (en)
Inventor
Gilles Borsoni
Michel Froment
Michael Korwin-Pawlowski
Jean-Pierre Lazzari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X Ion SA
Original Assignee
X Ion SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X Ion SA filed Critical X Ion SA
Publication of AU5411900A publication Critical patent/AU5411900A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
AU54119/00A 1999-06-08 2000-06-06 Method for engraving a thin dielectric layer on a silicon substrate and equipment for carrying out said method Abandoned AU5411900A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9907179A FR2794892B1 (fr) 1999-06-08 1999-06-08 Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre
FR9907179 1999-06-08
PCT/FR2000/001541 WO2000075974A1 (fr) 1999-06-08 2000-06-06 Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre

Publications (1)

Publication Number Publication Date
AU5411900A true AU5411900A (en) 2000-12-28

Family

ID=9546483

Family Applications (1)

Application Number Title Priority Date Filing Date
AU54119/00A Abandoned AU5411900A (en) 1999-06-08 2000-06-06 Method for engraving a thin dielectric layer on a silicon substrate and equipment for carrying out said method

Country Status (3)

Country Link
AU (1) AU5411900A (fr)
FR (1) FR2794892B1 (fr)
WO (1) WO2000075974A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2815770A1 (fr) * 2000-10-23 2002-04-26 X Ion Procede de lithographie ionique a haute selectivite
US6554950B2 (en) 2001-01-16 2003-04-29 Applied Materials, Inc. Method and apparatus for removal of surface contaminants from substrates in vacuum applications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536718C3 (de) * 1975-08-18 1978-04-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung geätzter Strukturen in Festkörperoberflächen durch Ionenätzung und Bestrahlungsmaske zur Verwendung in diesem Verfahren
US5327475A (en) * 1992-08-18 1994-07-05 Ruxam, Inc. Soft x-ray submicron lithography using multiply charged ions
JPH07230985A (ja) * 1994-02-18 1995-08-29 Hitachi Ltd 表面処理方法およびその装置
FR2764110B1 (fr) * 1997-05-28 1999-08-20 Univ Paris Curie Dispositif et procede de gravure par ions

Also Published As

Publication number Publication date
FR2794892B1 (fr) 2003-06-27
WO2000075974A1 (fr) 2000-12-14
FR2794892A1 (fr) 2000-12-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase