FR2794892B1 - Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre - Google Patents

Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre

Info

Publication number
FR2794892B1
FR2794892B1 FR9907179A FR9907179A FR2794892B1 FR 2794892 B1 FR2794892 B1 FR 2794892B1 FR 9907179 A FR9907179 A FR 9907179A FR 9907179 A FR9907179 A FR 9907179A FR 2794892 B1 FR2794892 B1 FR 2794892B1
Authority
FR
France
Prior art keywords
silicon substrate
thin layer
etching process
dielectric thin
layer etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9907179A
Other languages
English (en)
Other versions
FR2794892A1 (fr
Inventor
Gilles Borsoni
Michel Froment
Pawlowski Michael Korwin
Jean Pierre Lazzari
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
X-ION
X ION
Original Assignee
X-ION
X ION
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by X-ION, X ION filed Critical X-ION
Priority to FR9907179A priority Critical patent/FR2794892B1/fr
Publication of FR2794892A1 publication Critical patent/FR2794892A1/fr
Application granted granted Critical
Publication of FR2794892B1 publication Critical patent/FR2794892B1/fr
Anticipated expiration legal-status Critical
Application status is Expired - Fee Related legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H01J37/3056Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31105Etching inorganic layers
    • H01L21/31111Etching inorganic layers by chemical means
    • H01L21/31116Etching inorganic layers by chemical means by dry-etching
FR9907179A 1999-06-08 1999-06-08 Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre Expired - Fee Related FR2794892B1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9907179A FR2794892B1 (fr) 1999-06-08 1999-06-08 Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9907179A FR2794892B1 (fr) 1999-06-08 1999-06-08 Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre
AU54119/00A AU5411900A (en) 1999-06-08 2000-06-06 Method for engraving a thin dielectric layer on a silicon substrate and equipment for carrying out said method
PCT/FR2000/001541 WO2000075974A1 (fr) 1999-06-08 2000-06-06 Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre

Publications (2)

Publication Number Publication Date
FR2794892A1 FR2794892A1 (fr) 2000-12-15
FR2794892B1 true FR2794892B1 (fr) 2003-06-27

Family

ID=9546483

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9907179A Expired - Fee Related FR2794892B1 (fr) 1999-06-08 1999-06-08 Procede de gravure de couche mince dielectrique sur substrat de silicium et equipement de mise en oeuvre

Country Status (3)

Country Link
AU (1) AU5411900A (fr)
FR (1) FR2794892B1 (fr)
WO (1) WO2000075974A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2815770A1 (fr) * 2000-10-23 2002-04-26 X Ion Procede de lithographie ionique a haute selectivite
US6554950B2 (en) 2001-01-16 2003-04-29 Applied Materials, Inc. Method and apparatus for removal of surface contaminants from substrates in vacuum applications

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2536718C3 (fr) * 1975-08-18 1978-04-27 Siemens Ag, 1000 Berlin Und 8000 Muenchen
US5327475A (en) * 1992-08-18 1994-07-05 Ruxam, Inc. Soft x-ray submicron lithography using multiply charged ions
JPH07230985A (ja) * 1994-02-18 1995-08-29 Hitachi Ltd 表面処理方法およびその装置
FR2764110B1 (fr) * 1997-05-28 1999-08-20 Univ Paris Curie Dispositif et procede de gravure par ions

Also Published As

Publication number Publication date
WO2000075974A1 (fr) 2000-12-14
AU5411900A (en) 2000-12-28
FR2794892A1 (fr) 2000-12-15

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20060228