AU476109B2 - Improvements in or relating to switching newworks an switches for the use therein - Google Patents

Improvements in or relating to switching newworks an switches for the use therein

Info

Publication number
AU476109B2
AU476109B2 AU63521/73A AU6352173A AU476109B2 AU 476109 B2 AU476109 B2 AU 476109B2 AU 63521/73 A AU63521/73 A AU 63521/73A AU 6352173 A AU6352173 A AU 6352173A AU 476109 B2 AU476109 B2 AU 476109B2
Authority
AU
Australia
Prior art keywords
newworks
relating
switches
switching
switching newworks
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU63521/73A
Other languages
English (en)
Other versions
AU6352173A (en
Inventor
ROBERT LEONARD PRITCHETT and ROBERT KENNETH YORK IRVINE KEERS HETHERINGTON
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of AU6352173A publication Critical patent/AU6352173A/en
Application granted granted Critical
Publication of AU476109B2 publication Critical patent/AU476109B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/735Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q3/00Selecting arrangements
    • H04Q3/42Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • H10D89/311Design considerations for internal polarisation in bipolar devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Thyristors (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Memories (AREA)
AU63521/73A 1972-12-18 1973-12-12 Improvements in or relating to switching newworks an switches for the use therein Expired AU476109B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US31628472A 1972-12-18 1972-12-18
USUS316,284 1972-12-18

Publications (2)

Publication Number Publication Date
AU6352173A AU6352173A (en) 1975-06-12
AU476109B2 true AU476109B2 (en) 1976-09-09

Family

ID=23228374

Family Applications (1)

Application Number Title Priority Date Filing Date
AU63521/73A Expired AU476109B2 (en) 1972-12-18 1973-12-12 Improvements in or relating to switching newworks an switches for the use therein

Country Status (10)

Country Link
US (1) US3786425A (en, 2012)
JP (1) JPS5327114B2 (en, 2012)
AU (1) AU476109B2 (en, 2012)
BE (1) BE808714A (en, 2012)
CA (1) CA980013A (en, 2012)
DE (1) DE2362134A1 (en, 2012)
FR (1) FR2210826B1 (en, 2012)
GB (1) GB1415810A (en, 2012)
IT (1) IT1000524B (en, 2012)
NL (1) NL7317018A (en, 2012)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576833B2 (en, 2012) * 1974-12-20 1982-02-06
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
US4125855A (en) * 1977-03-28 1978-11-14 Bell Telephone Laboratories, Incorporated Integrated semiconductor crosspoint arrangement
JP2910139B2 (ja) * 1990-03-28 1999-06-23 ソニー株式会社 マトリクススイッチャ装置
US5117207A (en) * 1990-07-30 1992-05-26 Lockheed Sanders, Inc. Monolithic microwave airbridge
US5793126A (en) * 1995-11-29 1998-08-11 Elantec, Inc. Power control chip with circuitry that isolates switching elements and bond wires for testing
US6552371B2 (en) * 2001-02-16 2003-04-22 Teraburst Networks Inc. Telecommunications switch array with thyristor addressing
TWI307970B (en) * 2005-12-13 2009-03-21 Macroblock Inc Light-emitting semiconductor device with open-bypass function

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1251384B (de) * 1960-03-23 1967-10-05 International Standard Electric Corporation New York, NY (V St A) Schaltungsanordnung mit einer Durchschaltematnx mit pnpn Dioden fur elektronische Fernsprechanlagen
US3575646A (en) * 1966-09-23 1971-04-20 Westinghouse Electric Corp Integrated circuit structures including controlled rectifiers

Also Published As

Publication number Publication date
JPS5327114B2 (en, 2012) 1978-08-05
US3786425A (en) 1974-01-15
CA980013A (en) 1975-12-16
JPS4991193A (en, 2012) 1974-08-30
GB1415810A (en) 1975-11-26
FR2210826A1 (en, 2012) 1974-07-12
AU6352173A (en) 1975-06-12
NL7317018A (en, 2012) 1974-06-20
FR2210826B1 (en, 2012) 1978-03-03
BE808714A (fr) 1974-04-16
IT1000524B (it) 1976-04-10
DE2362134A1 (de) 1974-06-20

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