NL7317018A - - Google Patents

Info

Publication number
NL7317018A
NL7317018A NL7317018A NL7317018A NL7317018A NL 7317018 A NL7317018 A NL 7317018A NL 7317018 A NL7317018 A NL 7317018A NL 7317018 A NL7317018 A NL 7317018A NL 7317018 A NL7317018 A NL 7317018A
Authority
NL
Netherlands
Application number
NL7317018A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7317018A publication Critical patent/NL7317018A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/735Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04QSELECTING
    • H04Q3/00Selecting arrangements
    • H04Q3/42Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker
    • H04Q3/52Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements
    • H04Q3/521Circuit arrangements for indirect selecting controlled by common circuits, e.g. register controller, marker using static devices in switching stages, e.g. electronic switching arrangements using semiconductors in the switching stages
NL7317018A 1972-12-18 1973-12-12 NL7317018A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US31628472A 1972-12-18 1972-12-18

Publications (1)

Publication Number Publication Date
NL7317018A true NL7317018A (xx) 1974-06-20

Family

ID=23228374

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7317018A NL7317018A (xx) 1972-12-18 1973-12-12

Country Status (10)

Country Link
US (1) US3786425A (xx)
JP (1) JPS5327114B2 (xx)
AU (1) AU476109B2 (xx)
BE (1) BE808714A (xx)
CA (1) CA980013A (xx)
DE (1) DE2362134A1 (xx)
FR (1) FR2210826B1 (xx)
GB (1) GB1415810A (xx)
IT (1) IT1000524B (xx)
NL (1) NL7317018A (xx)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS576833B2 (xx) * 1974-12-20 1982-02-06
US4130827A (en) * 1976-12-03 1978-12-19 Bell Telephone Laboratories, Incorporated Integrated circuit switching network using low substrate leakage current thyristor construction
US4125855A (en) * 1977-03-28 1978-11-14 Bell Telephone Laboratories, Incorporated Integrated semiconductor crosspoint arrangement
JP2910139B2 (ja) * 1990-03-28 1999-06-23 ソニー株式会社 マトリクススイッチャ装置
US5117207A (en) * 1990-07-30 1992-05-26 Lockheed Sanders, Inc. Monolithic microwave airbridge
US5793126A (en) * 1995-11-29 1998-08-11 Elantec, Inc. Power control chip with circuitry that isolates switching elements and bond wires for testing
US6552371B2 (en) * 2001-02-16 2003-04-22 Teraburst Networks Inc. Telecommunications switch array with thyristor addressing
TWI307970B (en) * 2005-12-13 2009-03-21 Macroblock Inc Light-emitting semiconductor device with open-bypass function

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL284730A (xx) * 1960-03-23 1900-01-01
US3575646A (en) * 1966-09-23 1971-04-20 Westinghouse Electric Corp Integrated circuit structures including controlled rectifiers

Also Published As

Publication number Publication date
FR2210826A1 (xx) 1974-07-12
AU476109B2 (en) 1976-09-09
FR2210826B1 (xx) 1978-03-03
CA980013A (en) 1975-12-16
GB1415810A (en) 1975-11-26
DE2362134A1 (de) 1974-06-20
JPS4991193A (xx) 1974-08-30
JPS5327114B2 (xx) 1978-08-05
US3786425A (en) 1974-01-15
IT1000524B (it) 1976-04-10
AU6352173A (en) 1975-06-12
BE808714A (fr) 1974-04-16

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Legal Events

Date Code Title Description
BV The patent application has lapsed