AU4566672A - Method of epitaxially depositing ternary iii-v compounds from the liquid phase - Google Patents

Method of epitaxially depositing ternary iii-v compounds from the liquid phase

Info

Publication number
AU4566672A
AU4566672A AU45666/72A AU4566672A AU4566672A AU 4566672 A AU4566672 A AU 4566672A AU 45666/72 A AU45666/72 A AU 45666/72A AU 4566672 A AU4566672 A AU 4566672A AU 4566672 A AU4566672 A AU 4566672A
Authority
AU
Australia
Prior art keywords
compounds
liquid phase
epitaxially depositing
ternary iii
depositing ternary
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
AU45666/72A
Other languages
English (en)
Inventor
Leduc Jean-Marc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU4566672A publication Critical patent/AU4566672A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU45666/72A 1971-08-23 1972-08-17 Method of epitaxially depositing ternary iii-v compounds from the liquid phase Expired AU4566672A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FRFR7130542 1971-08-23
FR7130542A FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Publications (1)

Publication Number Publication Date
AU4566672A true AU4566672A (en) 1974-02-21

Family

ID=9082124

Family Applications (1)

Application Number Title Priority Date Filing Date
AU45666/72A Expired AU4566672A (en) 1971-08-23 1972-08-17 Method of epitaxially depositing ternary iii-v compounds from the liquid phase

Country Status (6)

Country Link
JP (1) JPS4830691A (enrdf_load_stackoverflow)
AU (1) AU4566672A (enrdf_load_stackoverflow)
DE (1) DE2238664A1 (enrdf_load_stackoverflow)
FR (1) FR2151171A5 (enrdf_load_stackoverflow)
IT (1) IT964961B (enrdf_load_stackoverflow)
NL (1) NL7211381A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2251369B1 (enrdf_load_stackoverflow) * 1973-11-15 1978-02-10 Radiotechnique Compelec
JPS5716487B2 (enrdf_load_stackoverflow) * 1974-07-01 1982-04-05
JPS524782A (en) * 1975-06-30 1977-01-14 Matsushita Electric Ind Co Ltd Liquid phase epitaxial growth method
JPS52135653A (en) * 1976-05-10 1977-11-12 Hitachi Ltd Differential amplifier
JPS55175239U (enrdf_load_stackoverflow) * 1979-06-04 1980-12-16
FR2519032A1 (fr) * 1981-12-28 1983-07-01 Benchimol Jean Louis Procede de depot par epitaxie en phase liquide d'un compose ternaire
JP3199110B2 (ja) 1997-12-05 2001-08-13 松下電器産業株式会社 蛍光ランプ

Also Published As

Publication number Publication date
JPS4830691A (enrdf_load_stackoverflow) 1973-04-23
NL7211381A (enrdf_load_stackoverflow) 1973-02-27
DE2238664A1 (de) 1973-03-15
IT964961B (it) 1974-01-31
FR2151171A5 (en) 1973-04-13

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