NL7211381A - - Google Patents

Info

Publication number
NL7211381A
NL7211381A NL7211381A NL7211381A NL7211381A NL 7211381 A NL7211381 A NL 7211381A NL 7211381 A NL7211381 A NL 7211381A NL 7211381 A NL7211381 A NL 7211381A NL 7211381 A NL7211381 A NL 7211381A
Authority
NL
Netherlands
Application number
NL7211381A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7211381A publication Critical patent/NL7211381A/xx

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00Liquid-phase epitaxial-layer growth
    • C30B19/10Controlling or regulating
    • C30B19/106Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02395Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/02546Arsenides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02625Liquid deposition using melted materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
NL7211381A 1971-08-23 1972-08-18 NL7211381A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7130542A FR2151171A5 (en) 1971-08-23 1971-08-23 Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium

Publications (1)

Publication Number Publication Date
NL7211381A true NL7211381A (enrdf_load_stackoverflow) 1973-02-27

Family

ID=9082124

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7211381A NL7211381A (enrdf_load_stackoverflow) 1971-08-23 1972-08-18

Country Status (6)

Country Link
JP (1) JPS4830691A (enrdf_load_stackoverflow)
AU (1) AU4566672A (enrdf_load_stackoverflow)
DE (1) DE2238664A1 (enrdf_load_stackoverflow)
FR (1) FR2151171A5 (enrdf_load_stackoverflow)
IT (1) IT964961B (enrdf_load_stackoverflow)
NL (1) NL7211381A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2251369B1 (enrdf_load_stackoverflow) * 1973-11-15 1978-02-10 Radiotechnique Compelec
JPS5716487B2 (enrdf_load_stackoverflow) * 1974-07-01 1982-04-05
JPS524782A (en) * 1975-06-30 1977-01-14 Matsushita Electric Ind Co Ltd Liquid phase epitaxial growth method
JPS52135653A (en) * 1976-05-10 1977-11-12 Hitachi Ltd Differential amplifier
JPS55175239U (enrdf_load_stackoverflow) * 1979-06-04 1980-12-16
FR2519032A1 (fr) * 1981-12-28 1983-07-01 Benchimol Jean Louis Procede de depot par epitaxie en phase liquide d'un compose ternaire
JP3199110B2 (ja) 1997-12-05 2001-08-13 松下電器産業株式会社 蛍光ランプ

Also Published As

Publication number Publication date
JPS4830691A (enrdf_load_stackoverflow) 1973-04-23
DE2238664A1 (de) 1973-03-15
IT964961B (it) 1974-01-31
AU4566672A (en) 1974-02-21
FR2151171A5 (en) 1973-04-13

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