AU3594000A - Epitaxially grown p-type diffusion source for photodiode fabrication - Google Patents

Epitaxially grown p-type diffusion source for photodiode fabrication

Info

Publication number
AU3594000A
AU3594000A AU35940/00A AU3594000A AU3594000A AU 3594000 A AU3594000 A AU 3594000A AU 35940/00 A AU35940/00 A AU 35940/00A AU 3594000 A AU3594000 A AU 3594000A AU 3594000 A AU3594000 A AU 3594000A
Authority
AU
Australia
Prior art keywords
type diffusion
epitaxially grown
diffusion source
photodiode fabrication
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU35940/00A
Inventor
Alan Richard Sugg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sensors Unlimited Inc
Original Assignee
Sensors Unlimited Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sensors Unlimited Inc filed Critical Sensors Unlimited Inc
Publication of AU3594000A publication Critical patent/AU3594000A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2258—Diffusion into or out of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
AU35940/00A 1999-03-01 2000-02-10 Epitaxially grown p-type diffusion source for photodiode fabrication Abandoned AU3594000A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12218599P 1999-03-01 1999-03-01
US60122185 1999-03-01
PCT/US2000/003474 WO2000052742A1 (en) 1999-03-01 2000-02-10 Epitaxially grown p-type diffusion source for photodiode fabrication

Publications (1)

Publication Number Publication Date
AU3594000A true AU3594000A (en) 2000-09-21

Family

ID=22401186

Family Applications (1)

Application Number Title Priority Date Filing Date
AU35940/00A Abandoned AU3594000A (en) 1999-03-01 2000-02-10 Epitaxially grown p-type diffusion source for photodiode fabrication

Country Status (3)

Country Link
US (1) US6489635B1 (en)
AU (1) AU3594000A (en)
WO (1) WO2000052742A1 (en)

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US6815790B2 (en) * 2003-01-10 2004-11-09 Rapiscan, Inc. Position sensing detector for the detection of light within two dimensions
US7279731B1 (en) * 2006-05-15 2007-10-09 Udt Sensors, Inc. Edge illuminated photodiodes
US7880258B2 (en) * 2003-05-05 2011-02-01 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US8519503B2 (en) * 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US7655999B2 (en) 2006-09-15 2010-02-02 Udt Sensors, Inc. High density photodiodes
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US8164151B2 (en) * 2007-05-07 2012-04-24 Osi Optoelectronics, Inc. Thin active layer fishbone photodiode and method of manufacturing the same
US7656001B2 (en) * 2006-11-01 2010-02-02 Udt Sensors, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US7256470B2 (en) 2005-03-16 2007-08-14 Udt Sensors, Inc. Photodiode with controlled current leakage
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7057254B2 (en) * 2003-05-05 2006-06-06 Udt Sensors, Inc. Front illuminated back side contact thin wafer detectors
US7242069B2 (en) * 2003-05-05 2007-07-10 Udt Sensors, Inc. Thin wafer detectors with improved radiation damage and crosstalk characteristics
US8035183B2 (en) * 2003-05-05 2011-10-11 Udt Sensors, Inc. Photodiodes with PN junction on both front and back sides
US8120023B2 (en) * 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
DE102007006211B3 (en) * 2007-02-08 2008-07-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Hetero-junction pin photodiode data transmission i.e. high-speed optical data transmission, has doped window layer made of p-doped indium aluminum arsenide with high band gap, and protective coating made of n or p-doped indium phosphide
KR20100047246A (en) * 2007-07-03 2010-05-07 마이크로링크 디바이시즈, 인크. Methods for fabricating thin film iii-v compound solar cell
US20100053802A1 (en) * 2008-08-27 2010-03-04 Masaki Yamashita Low Power Disk-Drive Motor Driver
BRPI0919221A2 (en) 2008-09-15 2015-12-08 Osi Optoelectronics Inc thin active layer fishbone photodiode with a shallow n + layer and manufacturing method thereof
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
US8399820B2 (en) 2009-06-23 2013-03-19 Sensors Unlimited, Inc. Multicolor detectors and applications thereof
US8852994B2 (en) 2010-05-24 2014-10-07 Masimo Semiconductor, Inc. Method of fabricating bifacial tandem solar cells
CN102130208A (en) * 2010-12-28 2011-07-20 中国科学院上海微系统与信息技术研究所 Method for manufacturing photoelectric detection unit or focal plane device by using molecular beam epitaxy method
US9163905B2 (en) 2012-05-23 2015-10-20 Rosemount Aerospace Inc. Dual-mode SAL/IR imaging
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US9383170B2 (en) 2013-06-21 2016-07-05 Rosemount Aerospace Inc Laser-aided passive seeker
KR102237820B1 (en) 2014-05-14 2021-04-08 삼성전자주식회사 Lateral type photodiode, image sensor including the same and method of manufacturing the photodide and the image sensor

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US4616246A (en) 1982-11-22 1986-10-07 Chronar Corp. Enhancement of photoconductivity in pyrolytically prepared semiconductors
US4661961A (en) 1983-06-20 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Buried heterostructure devices with unique contact-facilitating layers
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Also Published As

Publication number Publication date
WO2000052742A1 (en) 2000-09-08
US6489635B1 (en) 2002-12-03

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase