AU2001261827A1 - Low temperature grown optical detector - Google Patents

Low temperature grown optical detector

Info

Publication number
AU2001261827A1
AU2001261827A1 AU2001261827A AU6182701A AU2001261827A1 AU 2001261827 A1 AU2001261827 A1 AU 2001261827A1 AU 2001261827 A AU2001261827 A AU 2001261827A AU 6182701 A AU6182701 A AU 6182701A AU 2001261827 A1 AU2001261827 A1 AU 2001261827A1
Authority
AU
Australia
Prior art keywords
low temperature
optical detector
temperature grown
grown optical
detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001261827A
Inventor
James S. Harris
David A.B. Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leland Stanford Junior University
Original Assignee
Leland Stanford Junior University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leland Stanford Junior University filed Critical Leland Stanford Junior University
Publication of AU2001261827A1 publication Critical patent/AU2001261827A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
    • H01L31/1085—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
AU2001261827A 2000-05-08 2001-05-08 Low temperature grown optical detector Abandoned AU2001261827A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/567,179 US6653706B1 (en) 2000-05-08 2000-05-08 Low temperature grown optical detector
US09/567,179 2000-05-08
PCT/US2001/040687 WO2001086699A2 (en) 2000-05-08 2001-05-08 Low temperature grown optical detector

Publications (1)

Publication Number Publication Date
AU2001261827A1 true AU2001261827A1 (en) 2001-11-20

Family

ID=24266052

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001261827A Abandoned AU2001261827A1 (en) 2000-05-08 2001-05-08 Low temperature grown optical detector

Country Status (3)

Country Link
US (1) US6653706B1 (en)
AU (1) AU2001261827A1 (en)
WO (1) WO2001086699A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2393037B (en) * 2002-09-11 2007-05-23 Tera View Ltd Method of enhancing the photoconductive properties of a semiconductor and method of producing a seminconductor with enhanced photoconductive properties
US7180379B1 (en) * 2004-05-03 2007-02-20 National Semiconductor Corporation Laser powered clock circuit with a substantially reduced clock skew
US7209503B1 (en) 2004-05-03 2007-04-24 National Semiconductor Corporation Laser powered integrated circuit
CN101609857B (en) * 2008-06-18 2010-12-01 中国科学院半导体研究所 Method for producing refracting surface incidence detector
CN110143563B (en) * 2018-05-16 2021-12-24 北京纳米能源与系统研究所 Schottky sensor system

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4332469A (en) 1980-03-14 1982-06-01 Photodyne, Inc. Optical multimeter
JPS58174910A (en) 1982-04-08 1983-10-14 Fuji Electric Co Ltd Focusing detector
EP0365875B1 (en) * 1988-10-28 1995-08-09 Texas Instruments Incorporated Capped anneal
DE3929018A1 (en) 1989-09-01 1991-03-07 Deutsche Bundespost Opto-electronic image converter on semiconductor chip - has image sensors in=line and A=D converter for each sensor
JP2817995B2 (en) 1990-03-15 1998-10-30 富士通株式会社 III-V compound semiconductor heterostructure substrate and III-V compound heterostructure semiconductor device
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
ES2076414T3 (en) 1991-06-20 1995-11-01 Hewlett Packard Gmbh PHOTODIOD SYSTEM.
US6355976B1 (en) * 1992-05-14 2002-03-12 Reveo, Inc Three-dimensional packaging technology for multi-layered integrated circuits
US5482656A (en) * 1993-03-04 1996-01-09 Kabushiki Kaisha Toshiba Non-linear optical devices employing a polysilane composition and a polysilane composition therefor
US5537498A (en) 1993-03-05 1996-07-16 Cray Research, Inc. Optical clock distribution system
US5850195A (en) 1993-09-09 1998-12-15 Texas Instruments Incorporated Monolithic light-to-digital signal converter
US5568574A (en) 1995-06-12 1996-10-22 University Of Southern California Modulator-based photonic chip-to-chip interconnections for dense three-dimensional multichip module integration
US5621227A (en) * 1995-07-18 1997-04-15 Discovery Semiconductors, Inc. Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy
US5812708A (en) 1996-12-31 1998-09-22 Intel Corporation Method and apparatus for distributing an optical clock in an integrated circuit
JP3783411B2 (en) * 1997-08-15 2006-06-07 富士ゼロックス株式会社 Surface emitting semiconductor laser
US6400855B1 (en) * 1999-04-16 2002-06-04 Radiant Photonics, Inc. N × N optical switching array device and system

Also Published As

Publication number Publication date
US6653706B1 (en) 2003-11-25
WO2001086699A3 (en) 2003-01-30
WO2001086699A2 (en) 2001-11-15

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